XOR Voltage NAND Gate Solution

STEP 0: Pre-Calculation Summary
Formula Used
XOR Voltage Nand Gate = (Capacitance 2*Base Collector Voltage)/(Capacitance 1+Capacitance 2)
Vx = (Cy*Vbc)/(Cx+Cy)
This formula uses 4 Variables
Variables Used
XOR Voltage Nand Gate - (Measured in Volt) - XOR Voltage Nand Gate is x-direction voltage in NAND gate.
Capacitance 2 - (Measured in Farad) - Capacitance 2 is expressed as the ratio of the electric charge on each conductor to the potential difference (i.e., voltage) between them.
Base Collector Voltage - (Measured in Volt) - Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.
Capacitance 1 - (Measured in Farad) - Capacitance 1 is expressed as the ratio of the electric charge on each conductor to the potential difference (i.e., voltage) between them.
STEP 1: Convert Input(s) to Base Unit
Capacitance 2: 3.1 Millifarad --> 0.0031 Farad (Check conversion ​here)
Base Collector Voltage: 2.02 Volt --> 2.02 Volt No Conversion Required
Capacitance 1: 4 Millifarad --> 0.004 Farad (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vx = (Cy*Vbc)/(Cx+Cy) --> (0.0031*2.02)/(0.004+0.0031)
Evaluating ... ...
Vx = 0.881971830985915
STEP 3: Convert Result to Output's Unit
0.881971830985915 Volt --> No Conversion Required
FINAL ANSWER
0.881971830985915 0.881972 Volt <-- XOR Voltage Nand Gate
(Calculation completed in 00.004 seconds)

Credits

Creator Image
Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
Shobhit Dimri has created this Calculator and 900+ more calculators!
Verifier Image
Verified by Anshika Arya
National Institute Of Technology (NIT), Hamirpur
Anshika Arya has verified this Calculator and 2500+ more calculators!

CMOS Time Characteristics Calculators

Aperture Time for Falling Input
​ LaTeX ​ Go Aperture Time for Falling Input = Setup Time at Low Logic+Hold Time at High Logic
Setup Time at Low Logic
​ LaTeX ​ Go Setup Time at Low Logic = Aperture Time for Falling Input-Hold Time at High Logic
Aperture Time for Rising Input
​ LaTeX ​ Go Aperture Time for Rising Input = Setup Time at High Logic+Hold Time at Low Logic
Setup Time at High Logic
​ LaTeX ​ Go Setup Time at High Logic = Aperture Time for Rising Input-Hold Time at Low Logic

XOR Voltage NAND Gate Formula

​LaTeX ​Go
XOR Voltage Nand Gate = (Capacitance 2*Base Collector Voltage)/(Capacitance 1+Capacitance 2)
Vx = (Cy*Vbc)/(Cx+Cy)

Explain the consquenses of charge sharing.

Dynamic gates are subject to problems with charge sharing. Charge sharing is most serious when the output is lightly loaded and the internal capacitance is large. For example, 4-input dynamic NAND gates and complex AOI gates can share charge among multiple nodes. If the charge-sharing noise is small, the keeper will eventually restore the dynamic output to VDD. However, if the charge-sharing noise is large, the output may flip and turn off the keeper, leading to incorrect results.

How to Calculate XOR Voltage NAND Gate?

XOR Voltage NAND Gate calculator uses XOR Voltage Nand Gate = (Capacitance 2*Base Collector Voltage)/(Capacitance 1+Capacitance 2) to calculate the XOR Voltage Nand Gate, The XOR Voltage NAND Gate formula is defined as the voltage at the NAND gate in the x-direction of the logic gate. XOR Voltage Nand Gate is denoted by Vx symbol.

How to calculate XOR Voltage NAND Gate using this online calculator? To use this online calculator for XOR Voltage NAND Gate, enter Capacitance 2 (Cy), Base Collector Voltage (Vbc) & Capacitance 1 (Cx) and hit the calculate button. Here is how the XOR Voltage NAND Gate calculation can be explained with given input values -> 0.881972 = (0.0031*2.02)/(0.004+0.0031).

FAQ

What is XOR Voltage NAND Gate?
The XOR Voltage NAND Gate formula is defined as the voltage at the NAND gate in the x-direction of the logic gate and is represented as Vx = (Cy*Vbc)/(Cx+Cy) or XOR Voltage Nand Gate = (Capacitance 2*Base Collector Voltage)/(Capacitance 1+Capacitance 2). Capacitance 2 is expressed as the ratio of the electric charge on each conductor to the potential difference (i.e., voltage) between them, Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state & Capacitance 1 is expressed as the ratio of the electric charge on each conductor to the potential difference (i.e., voltage) between them.
How to calculate XOR Voltage NAND Gate?
The XOR Voltage NAND Gate formula is defined as the voltage at the NAND gate in the x-direction of the logic gate is calculated using XOR Voltage Nand Gate = (Capacitance 2*Base Collector Voltage)/(Capacitance 1+Capacitance 2). To calculate XOR Voltage NAND Gate, you need Capacitance 2 (Cy), Base Collector Voltage (Vbc) & Capacitance 1 (Cx). With our tool, you need to enter the respective value for Capacitance 2, Base Collector Voltage & Capacitance 1 and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
Let Others Know
Facebook
Twitter
Reddit
LinkedIn
Email
WhatsApp
Copied!