Voltage Swing On Bitline Solution

STEP 0: Pre-Calculation Summary
Formula Used
Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance)
ΔV = (Vdd/2)*Ccell/(Ccell+Cbit)
This formula uses 4 Variables
Variables Used
Voltage Swing on Bitline - (Measured in Volt) - Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.
Positive Voltage - (Measured in Volt) - The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit.
Cell Capacitance - (Measured in Farad) - Cell Capacitance is the capacitance of individual cell.
Bit Capacitance - (Measured in Farad) - Bit Capacitance is one bit's Capacitance in cmos vlsi.
STEP 1: Convert Input(s) to Base Unit
Positive Voltage: 2.58 Volt --> 2.58 Volt No Conversion Required
Cell Capacitance: 5.98 Picofarad --> 5.98E-12 Farad (Check conversion ​here)
Bit Capacitance: 12.38 Picofarad --> 1.238E-11 Farad (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ΔV = (Vdd/2)*Ccell/(Ccell+Cbit) --> (2.58/2)*5.98E-12/(5.98E-12+1.238E-11)
Evaluating ... ...
ΔV = 0.42016339869281
STEP 3: Convert Result to Output's Unit
0.42016339869281 Volt --> No Conversion Required
FINAL ANSWER
0.42016339869281 0.420163 Volt <-- Voltage Swing on Bitline
(Calculation completed in 00.004 seconds)

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Array Datapath Subsystem Calculators

Ground Capacitance
​ LaTeX ​ Go Ground Capacitance = ((Agressor Voltage*Adjacent Capacitance)/Victim Voltage)-Adjacent Capacitance
'XOR' Delay
​ LaTeX ​ Go XOR Delay = Ripple Time-(Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay)
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​ LaTeX ​ Go Ripple Time = Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay+XOR Delay
N-Bit Carry-Skip Adder
​ LaTeX ​ Go N-bit Carry Skip Adder = N-Input AND Gate*K-Input AND Gate

Voltage Swing On Bitline Formula

​LaTeX ​Go
Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance)
ΔV = (Vdd/2)*Ccell/(Ccell+Cbit)

What is Dynamic RAMs(DRAMs)?

Dynamic RAMs (DRAMs) store their contents as charge on a capacitor rather than in a feedback loop. Commercial DRAMs are built in specialized processes optimized for dense capacitor structures. They offer a factor of 10–20 greater density (bits/cm2) than high-performance SRAM built in a standard logic process, but they also have much higher latency. The cell is accessed by asserting the wordline to connect the capacitor to the bitline. On a read, the bitline is first precharged to VDD/2. When the wordline rises, the capacitor shares its charge with the bitline, causing a voltage
change that can be sensed. The read disturbs the cell contents at x, so the cell must be rewritten after each read. On a write, the bitline is driven high or low and the voltage is forced onto the capacitor. Some DRAMs drive the wordline to VDDP = VDD + Vt to avoid a degraded level when writing a ‘1.’

How to Calculate Voltage Swing On Bitline?

Voltage Swing On Bitline calculator uses Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance) to calculate the Voltage Swing on Bitline, The Voltage Swing On Bitline formula is defined as Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. ... The proposed SRAM that stores four bits in one block can achieve a minimum voltage of 0.42 V and a read delay that is 62.6 times lesser than that of the average-8T SRAM based on the 22-nm FinFET technology. Voltage Swing on Bitline is denoted by ΔV symbol.

How to calculate Voltage Swing On Bitline using this online calculator? To use this online calculator for Voltage Swing On Bitline, enter Positive Voltage (Vdd), Cell Capacitance (Ccell) & Bit Capacitance (Cbit) and hit the calculate button. Here is how the Voltage Swing On Bitline calculation can be explained with given input values -> 0.419706 = (2.58/2)*5.98E-12/(5.98E-12+1.238E-11).

FAQ

What is Voltage Swing On Bitline?
The Voltage Swing On Bitline formula is defined as Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. ... The proposed SRAM that stores four bits in one block can achieve a minimum voltage of 0.42 V and a read delay that is 62.6 times lesser than that of the average-8T SRAM based on the 22-nm FinFET technology and is represented as ΔV = (Vdd/2)*Ccell/(Ccell+Cbit) or Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance). The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit, Cell Capacitance is the capacitance of individual cell & Bit Capacitance is one bit's Capacitance in cmos vlsi.
How to calculate Voltage Swing On Bitline?
The Voltage Swing On Bitline formula is defined as Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. ... The proposed SRAM that stores four bits in one block can achieve a minimum voltage of 0.42 V and a read delay that is 62.6 times lesser than that of the average-8T SRAM based on the 22-nm FinFET technology is calculated using Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance). To calculate Voltage Swing On Bitline, you need Positive Voltage (Vdd), Cell Capacitance (Ccell) & Bit Capacitance (Cbit). With our tool, you need to enter the respective value for Positive Voltage, Cell Capacitance & Bit Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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