What is Dynamic RAMs(DRAMs)?
Dynamic RAMs (DRAMs) store their contents as charge on a capacitor rather than in a feedback loop. Commercial DRAMs are built in specialized processes optimized for dense capacitor structures. They offer a factor of 10–20 greater density (bits/cm2) than high-performance SRAM built in a standard logic process, but they also have much higher latency. The cell is accessed by asserting the wordline to connect the capacitor to the bitline. On a read, the bitline is first precharged to VDD/2. When the wordline rises, the capacitor shares its charge with the bitline, causing a voltage
change that can be sensed. The read disturbs the cell contents at x, so the cell must be rewritten after each read. On a write, the bitline is driven high or low and the voltage is forced onto the capacitor. Some DRAMs drive the wordline to VDDP = VDD + Vt to avoid a degraded level when writing a ‘1.’
How to Calculate Voltage Swing On Bitline?
Voltage Swing On Bitline calculator uses Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance) to calculate the Voltage Swing on Bitline, The Voltage Swing On Bitline formula is defined as Full-Swing Local Bitline SRAM Architecture Based on the 22-nm FinFET Technology for Low-Voltage Operation. ... The proposed SRAM that stores four bits in one block can achieve a minimum voltage of 0.42 V and a read delay that is 62.6 times lesser than that of the average-8T SRAM based on the 22-nm FinFET technology. Voltage Swing on Bitline is denoted by ΔV symbol.
How to calculate Voltage Swing On Bitline using this online calculator? To use this online calculator for Voltage Swing On Bitline, enter Positive Voltage (Vdd), Cell Capacitance (Ccell) & Bit Capacitance (Cbit) and hit the calculate button. Here is how the Voltage Swing On Bitline calculation can be explained with given input values -> 0.419706 = (2.58/2)*5.98E-12/(5.98E-12+1.238E-11).