Voltage Drop in IGBT in ON-State Calculator

✖Forward Current (IGBT) is the maximum current that can flow through the device when it is turned on.ⓘ Forward Current (IGBT) [i_f(igbt)]			+10% -10%
✖N Channel Resistance (IGBT) is the resistance of the semiconductor material in the device when the IGBT is turned on.ⓘ N Channel Resistance (IGBT) [R_ch(igbt)]			+10% -10%
✖Drift Resistance (IGBT) is N-drift region of the semiconductor material in the device. The N-drift region is a thick doped silicon that separates the collector from the P-base region.ⓘ Drift Resistance (IGBT) [R_d(igbt)]			+10% -10%
✖Voltage Pn Junction 1 (IGBT) is caused by the potential barrier that exists at the junction. This potential barrier is created by the diffusion of charge carriers across the junction.ⓘ Voltage Pn Junction 1 (IGBT) [V_j1(igbt)]			+10% -10%

✖Voltage Drop ON Stage (IGBT) is the voltage difference between the collector and emitter terminals when the IGBT is turned on. It is semiconductor material in the device.ⓘ Voltage Drop in IGBT in ON-State [V_ON(igbt)]

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Voltage Drop in IGBT in ON-State Solution

STEP 0: Pre-Calculation Summary

Formula Used

Voltage Drop ON Stage (IGBT) = Forward Current (IGBT)*N Channel Resistance (IGBT)+Forward Current (IGBT)*Drift Resistance (IGBT)+Voltage Pn Junction 1 (IGBT)
V_ON(igbt) = i_f(igbt)*R_ch(igbt)+i_f(igbt)*R_d(igbt)+V_j1(igbt)
This formula uses 5 Variables

Variables Used

Voltage Drop ON Stage (IGBT) - (Measured in Volt) - Voltage Drop ON Stage (IGBT) is the voltage difference between the collector and emitter terminals when the IGBT is turned on. It is semiconductor material in the device.
Forward Current (IGBT) - (Measured in Ampere) - Forward Current (IGBT) is the maximum current that can flow through the device when it is turned on.
N Channel Resistance (IGBT) - (Measured in Ohm) - N Channel Resistance (IGBT) is the resistance of the semiconductor material in the device when the IGBT is turned on.
Drift Resistance (IGBT) - (Measured in Ohm) - Drift Resistance (IGBT) is N-drift region of the semiconductor material in the device. The N-drift region is a thick doped silicon that separates the collector from the P-base region.
Voltage Pn Junction 1 (IGBT) - (Measured in Volt) - Voltage Pn Junction 1 (IGBT) is caused by the potential barrier that exists at the junction. This potential barrier is created by the diffusion of charge carriers across the junction.

STEP 1: Convert Input(s) to Base Unit

Forward Current (IGBT): 1.69 Milliampere --> 0.00169 Ampere (Check conversion here)
N Channel Resistance (IGBT): 10.59 Kilohm --> 10590 Ohm (Check conversion here)
Drift Resistance (IGBT): 0.98 Kilohm --> 980 Ohm (Check conversion here)
Voltage Pn Junction 1 (IGBT): 0.7 Volt --> 0.7 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_ON(igbt) = i_f(igbt)*R_ch(igbt)+i_f(igbt)*R_d(igbt)+V_j1(igbt) --> 0.00169*10590+0.00169*980+0.7

Evaluating ... ...

V_ON(igbt) = 20.2533

STEP 3: Convert Result to Output's Unit

20.2533 Volt --> No Conversion Required

FINAL ANSWER

20.2533 Volt <-- Voltage Drop ON Stage (IGBT)

(Calculation completed in 00.004 seconds)

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Voltage Drop in IGBT in ON-State

LaTeX Go Voltage Drop ON Stage (IGBT) = Forward Current (IGBT)*N Channel Resistance (IGBT)+Forward Current (IGBT)*Drift Resistance (IGBT)+Voltage Pn Junction 1 (IGBT)

IGBT Turn OFF Time

LaTeX Go Turn OFF Time (IGBT) = Delay Time (IGBT)+Initial Fall Time (IGBT)+Final Fall Time (IGBT)

Input Capacitance of IGBT

LaTeX Go Input Capacitance (IGBT) = Gate to Emitter Capacitance (IGBT)+Gate to Collector Capacitance (IGBT)

Emitter Current of IGBT

LaTeX Go Emitter Current (IGBT) = Hole Current (IGBT)+Electronic Current (IGBT)

Voltage Drop in IGBT in ON-State Formula

LaTeX Go

What is Voltage Drop in IGBT in ON-State ?

Voltage drop in an IGBT (Insulated Gate Bipolar Transistor) in the ON-state refers to the voltage that is lost or dissipated across the IGBT when it is conducting current. When an IGBT is in the ON-state, it is allowing current to flow from the collector to the emitter. This conduction state is typically characterized by a certain voltage drop, which is also known as the "ON-state voltage" or "V_CE(sat) " (Collector-Emitter Saturation Voltage).

How to Calculate Voltage Drop in IGBT in ON-State?

Voltage Drop in IGBT in ON-State calculator uses Voltage Drop ON Stage (IGBT) = Forward Current (IGBT)*N Channel Resistance (IGBT)+Forward Current (IGBT)*Drift Resistance (IGBT)+Voltage Pn Junction 1 (IGBT) to calculate the Voltage Drop ON Stage (IGBT), Voltage Drop in IGBT in ON-State is caused by the resistance of the semiconductor material in the device, as well as the resistance of the bond wires and other internal connections. The voltage drop in an IGBT on-state can be reduced by using a larger device with a lower on-state resistance. Another way to reduce the voltage drop is to reduce the current flowing through the device. Voltage Drop ON Stage (IGBT) is denoted by V_ON(igbt) symbol.

How to calculate Voltage Drop in IGBT in ON-State using this online calculator? To use this online calculator for Voltage Drop in IGBT in ON-State, enter Forward Current (IGBT) (i_f(igbt)), N Channel Resistance (IGBT) (R_ch(igbt)), Drift Resistance (IGBT) (R_d(igbt)) & Voltage Pn Junction 1 (IGBT) (V_j1(igbt)) and hit the calculate button. Here is how the Voltage Drop in IGBT in ON-State calculation can be explained with given input values -> 18.59876 = 0.00169*10590+0.00169*0.98+0.7.

FAQ

What is Voltage Drop in IGBT in ON-State?

Voltage Drop in IGBT in ON-State is caused by the resistance of the semiconductor material in the device, as well as the resistance of the bond wires and other internal connections. The voltage drop in an IGBT on-state can be reduced by using a larger device with a lower on-state resistance. Another way to reduce the voltage drop is to reduce the current flowing through the device and is represented as V_ON(igbt) = i_f(igbt)*R_ch(igbt)+i_f(igbt)*R_d(igbt)+V_j1(igbt) or Voltage Drop ON Stage (IGBT) = Forward Current (IGBT)*N Channel Resistance (IGBT)+Forward Current (IGBT)*Drift Resistance (IGBT)+Voltage Pn Junction 1 (IGBT). Forward Current (IGBT) is the maximum current that can flow through the device when it is turned on, N Channel Resistance (IGBT) is the resistance of the semiconductor material in the device when the IGBT is turned on, Drift Resistance (IGBT) is N-drift region of the semiconductor material in the device. The N-drift region is a thick doped silicon that separates the collector from the P-base region & Voltage Pn Junction 1 (IGBT) is caused by the potential barrier that exists at the junction. This potential barrier is created by the diffusion of charge carriers across the junction.

How to calculate Voltage Drop in IGBT in ON-State?

Voltage Drop in IGBT in ON-State is caused by the resistance of the semiconductor material in the device, as well as the resistance of the bond wires and other internal connections. The voltage drop in an IGBT on-state can be reduced by using a larger device with a lower on-state resistance. Another way to reduce the voltage drop is to reduce the current flowing through the device is calculated using Voltage Drop ON Stage (IGBT) = Forward Current (IGBT)*N Channel Resistance (IGBT)+Forward Current (IGBT)*Drift Resistance (IGBT)+Voltage Pn Junction 1 (IGBT). To calculate Voltage Drop in IGBT in ON-State, you need Forward Current (IGBT) (i_f(igbt)), N Channel Resistance (IGBT) (R_ch(igbt)), Drift Resistance (IGBT) (R_d(igbt)) & Voltage Pn Junction 1 (IGBT) (V_j1(igbt)). With our tool, you need to enter the respective value for Forward Current (IGBT), N Channel Resistance (IGBT), Drift Resistance (IGBT) & Voltage Pn Junction 1 (IGBT) and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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