Transconductance Parameter of MOS Transistor Calculator

✖Drain current below threshold voltage is defined as the subthreshold current and varies exponentially with gate to source voltage.ⓘ Drain Current [i_d]			+10% -10%
✖Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.ⓘ Voltage across Oxide [V_ox]			+10% -10%
✖Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.ⓘ Threshold Voltage [V_t]			+10% -10%
✖The voltage between gate and source is the voltage that falls across the gate-source terminal of the transistor.ⓘ Voltage between Gate and Source [V_gs]			+10% -10%

✖Transconductance parameter is the product of the process transconductance parameter and the transistor aspect ratio (W/L).ⓘ Transconductance Parameter of MOS Transistor [K_n]

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Transconductance Parameter of MOS Transistor Solution

STEP 0: Pre-Calculation Summary

Formula Used

Transconductance Parameter = Drain Current/((Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source)
K_n = i_d/((V_ox-V_t)*V_gs)
This formula uses 5 Variables

Variables Used

Transconductance Parameter - (Measured in Ampere per Square Volt) - Transconductance parameter is the product of the process transconductance parameter and the transistor aspect ratio (W/L).
Drain Current - (Measured in Ampere) - Drain current below threshold voltage is defined as the subthreshold current and varies exponentially with gate to source voltage.
Voltage across Oxide - (Measured in Volt) - Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.
Voltage between Gate and Source - (Measured in Volt) - The voltage between gate and source is the voltage that falls across the gate-source terminal of the transistor.

STEP 1: Convert Input(s) to Base Unit

Drain Current: 17.5 Milliampere --> 0.0175 Ampere (Check conversion here)
Voltage across Oxide: 3.775 Volt --> 3.775 Volt No Conversion Required
Threshold Voltage: 2 Volt --> 2 Volt No Conversion Required
Voltage between Gate and Source: 3.34 Volt --> 3.34 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

K_n = i_d/((V_ox-V_t)*V_gs) --> 0.0175/((3.775-2)*3.34)

Evaluating ... ...

K_n = 0.00295184279328667

STEP 3: Convert Result to Output's Unit

0.00295184279328667 Ampere per Square Volt -->2.95184279328667 Milliampere per Square Volt (Check conversion here)

FINAL ANSWER

2.95184279328667 ≈ 2.951843 Milliampere per Square Volt <-- Transconductance Parameter

(Calculation completed in 00.006 seconds)

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< Transistor Amplifier Characteristics Calculators

Current Flowing through Induced Channel in Transistor given Oxide Voltage

LaTeX Go Output Current = (Mobility of Electron*Oxide Capacitance*(Width of Channel/Length of Channel)*(Voltage across Oxide-Threshold Voltage))*Saturation Voltage between Drain and Source

Current Entering Drain Terminal of MOSFET at Saturation

LaTeX Go Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2

Total Instantaneous Drain Voltage

LaTeX Go Total Instantaneous Drain Voltage = Fundamental Component Voltage-Drain Resistance*Drain Current

Input Voltage in Transistor

LaTeX Go Fundamental Component Voltage = Drain Resistance*Drain Current-Total Instantaneous Drain Voltage

Transconductance Parameter of MOS Transistor Formula

LaTeX Go

Transconductance Parameter = Drain Current/((Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source)
K_n = i_d/((V_ox-V_t)*V_gs)

How do you increase transconductance?

A common figure of merit for FETs is the transconductance, and it can be increased by reducing the channel resistance through heavy doping. But this strategy degrades electron mobility because of carrier scattering by the ionized impurities.

How to Calculate Transconductance Parameter of MOS Transistor?

Transconductance Parameter of MOS Transistor calculator uses Transconductance Parameter = Drain Current/((Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source) to calculate the Transconductance Parameter, Transconductance Parameter of MOS Transistor is a measure of the transistor's ability to control the flow of current in response to a voltage applied across its gate and source terminals. Transconductance Parameter is denoted by K_n symbol.

How to calculate Transconductance Parameter of MOS Transistor using this online calculator? To use this online calculator for Transconductance Parameter of MOS Transistor, enter Drain Current (i_d), Voltage across Oxide (V_ox), Threshold Voltage (V_t) & Voltage between Gate and Source (V_gs) and hit the calculate button. Here is how the Transconductance Parameter of MOS Transistor calculation can be explained with given input values -> 2951.843 = 0.0175/((3.775-2)*3.34).

FAQ

What is Transconductance Parameter of MOS Transistor?

Transconductance Parameter of MOS Transistor is a measure of the transistor's ability to control the flow of current in response to a voltage applied across its gate and source terminals and is represented as K_n = i_d/((V_ox-V_t)*V_gs) or Transconductance Parameter = Drain Current/((Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source). Drain current below threshold voltage is defined as the subthreshold current and varies exponentially with gate to source voltage, Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide, Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals & The voltage between gate and source is the voltage that falls across the gate-source terminal of the transistor.

How to calculate Transconductance Parameter of MOS Transistor?

Transconductance Parameter of MOS Transistor is a measure of the transistor's ability to control the flow of current in response to a voltage applied across its gate and source terminals is calculated using Transconductance Parameter = Drain Current/((Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source). To calculate Transconductance Parameter of MOS Transistor, you need Drain Current (i_d), Voltage across Oxide (V_ox), Threshold Voltage (V_t) & Voltage between Gate and Source (V_gs). With our tool, you need to enter the respective value for Drain Current, Voltage across Oxide, Threshold Voltage & Voltage between Gate and Source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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