Total Power Dissipated in NMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance
PD = Id^2*Ron
This formula uses 3 Variables
Variables Used
Power Dissipated - (Measured in Watt) - Power dissipated refers to the energy that is converted into heat and lost in a circuit or system due to the presence of resistance, friction, or other forms of energy loss.
Drain Current in NMOS - (Measured in Ampere) - Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
ON Channel Resistance - (Measured in Ohm) - ON channel resistance is the channel-on resistance value between the drain and the source for any standard Mosfet circuit.
STEP 1: Convert Input(s) to Base Unit
Drain Current in NMOS: 239 Milliampere --> 0.239 Ampere (Check conversion ​here)
ON Channel Resistance: 0.02 Kilohm --> 20 Ohm (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
PD = Id^2*Ron --> 0.239^2*20
Evaluating ... ...
PD = 1.14242
STEP 3: Convert Result to Output's Unit
1.14242 Watt -->1142.42 Milliwatt (Check conversion ​here)
FINAL ANSWER
1142.42 Milliwatt <-- Power Dissipated
(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri
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Current Entering Drain Terminal of NMOS given Gate Source Voltage
​ LaTeX ​ Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)
NMOS as Linear Resistance
​ LaTeX ​ Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))
Electron Drift Velocity of Channel in NMOS Transistor
​ LaTeX ​ Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Total Power Dissipated in NMOS Formula

​LaTeX ​Go
Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance
PD = Id^2*Ron

What is power dissipated?

The definition of power dissipation is the process by which an electronic or electrical device produces heat (energy loss or waste) as an undesirable derivative of its primary action. Such as the case with central processing units, power dissipation is a principal concern in computer architecture. Furthermore, power dissipation in resistors is considered a naturally occurring phenomenon. The fact remains that all resistors that are part of a circuit and have a voltage drop across them will dissipate electrical power. Moreover, this electrical power converts into heat energy, and therefore all resistors have a (power) rating. Also, a resistor’s power rating is a classification that parameterizes the maximum power that it can dissipate before it reaches critical failure.

How to Calculate Total Power Dissipated in NMOS?

Total Power Dissipated in NMOS calculator uses Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance to calculate the Power Dissipated, The total power dissipated in NMOS is equal to the product of square of drain current and drain-source on-channel resistance . It is denoted by Pd. Power Dissipated is denoted by PD symbol.

How to calculate Total Power Dissipated in NMOS using this online calculator? To use this online calculator for Total Power Dissipated in NMOS, enter Drain Current in NMOS (Id) & ON Channel Resistance (Ron) and hit the calculate button. Here is how the Total Power Dissipated in NMOS calculation can be explained with given input values -> 1.1E+6 = 0.239^2*20.

FAQ

What is Total Power Dissipated in NMOS?
The total power dissipated in NMOS is equal to the product of square of drain current and drain-source on-channel resistance . It is denoted by Pd and is represented as PD = Id^2*Ron or Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance. Drain current in NMOS is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET) & ON channel resistance is the channel-on resistance value between the drain and the source for any standard Mosfet circuit.
How to calculate Total Power Dissipated in NMOS?
The total power dissipated in NMOS is equal to the product of square of drain current and drain-source on-channel resistance . It is denoted by Pd is calculated using Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance. To calculate Total Power Dissipated in NMOS, you need Drain Current in NMOS (Id) & ON Channel Resistance (Ron). With our tool, you need to enter the respective value for Drain Current in NMOS & ON Channel Resistance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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