Total Capacitance between Gate and Channel of MOSFETs Calculator

✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).ⓘ Channel Width [W_c]			+10% -10%
✖Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).ⓘ Channel Length [L]			+10% -10%

✖Gate Channel Capacitance refers to the electrical capacitance that exists between the gate electrode and the channel region of a metal-oxide-semiconductor field-effect transistor (MOSFET).ⓘ Total Capacitance between Gate and Channel of MOSFETs [C_g]

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Total Capacitance between Gate and Channel of MOSFETs Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Channel Capacitance = Oxide Capacitance*Channel Width*Channel Length
C_g = C_ox*W_c*L
This formula uses 4 Variables

Variables Used

Gate Channel Capacitance - (Measured in Farad) - Gate Channel Capacitance refers to the electrical capacitance that exists between the gate electrode and the channel region of a metal-oxide-semiconductor field-effect transistor (MOSFET).
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Channel Width - (Measured in Meter) - Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Channel Length - (Measured in Meter) - Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).

STEP 1: Convert Input(s) to Base Unit

Oxide Capacitance: 940 Microfarad --> 0.00094 Farad (Check conversion here)
Channel Width: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Channel Length: 100 Micrometer --> 0.0001 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_g = C_ox*W_c*L --> 0.00094*1E-05*0.0001

Evaluating ... ...

C_g = 9.4E-13

STEP 3: Convert Result to Output's Unit

9.4E-13 Farad -->9.4E-07 Microfarad (Check conversion here)

FINAL ANSWER

9.4E-07 ≈ 9.4E-7 Microfarad <-- Gate Channel Capacitance

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » Internal Capacitive Effects and High Frequency Model » Total Capacitance between Gate and Channel of MOSFETs

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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< Internal Capacitive Effects and High Frequency Model Calculators

Transition Frequency of MOSFET

LaTeX Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))

Total Capacitance between Gate and Channel of MOSFETs

LaTeX Go Gate Channel Capacitance = Oxide Capacitance*Channel Width*Channel Length

Gate to Source Channel Width of MOSFET

LaTeX Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)

Overlap Capacitance of MOSFET

LaTeX Go Overlap Capacitance = Channel Width*Oxide Capacitance*Overlap Length

Total Capacitance between Gate and Channel of MOSFETs Formula

LaTeX Go

Gate Channel Capacitance = Oxide Capacitance*Channel Width*Channel Length
C_g = C_ox*W_c*L

Explain the whole process of the channel region of the MOSFET forming a parallel-plate capacitor.

The gate and the channel region of the MOSFET form a parallel-plate capacitor, with the oxide layer acting as the capacitor dielectric. The positive gate voltage causes a positive charge to accumulate on the top plate of the capacitor (the gate electrode). The corresponding negative charge on the bottom plate is formed by the electrons in the induced channel. An electric field thus develops in the vertical direction. It is this field that controls the amount of charge in the channel, and thus it determines the channel conductivity and, in turn, the current that will flow through the channel when a voltage is applied.

How to Calculate Total Capacitance between Gate and Channel of MOSFETs?

Total Capacitance between Gate and Channel of MOSFETs calculator uses Gate Channel Capacitance = Oxide Capacitance*Channel Width*Channel Length to calculate the Gate Channel Capacitance, The Total capacitance between gate and channel of MOSFETs is the multiplication of oxide capacitance, length of the channel, and width of the channel and the oxide capacitance in the saturation region of MOSFET. Gate Channel Capacitance is denoted by C_g symbol.

How to calculate Total Capacitance between Gate and Channel of MOSFETs using this online calculator? To use this online calculator for Total Capacitance between Gate and Channel of MOSFETs, enter Oxide Capacitance (C_ox), Channel Width (W_c) & Channel Length (L) and hit the calculate button. Here is how the Total Capacitance between Gate and Channel of MOSFETs calculation can be explained with given input values -> 0.94 = 0.00094*1E-05*0.0001.

FAQ

What is Total Capacitance between Gate and Channel of MOSFETs?

The Total capacitance between gate and channel of MOSFETs is the multiplication of oxide capacitance, length of the channel, and width of the channel and the oxide capacitance in the saturation region of MOSFET and is represented as C_g = C_ox*W_c*L or Gate Channel Capacitance = Oxide Capacitance*Channel Width*Channel Length. Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits, Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz) & Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).

How to calculate Total Capacitance between Gate and Channel of MOSFETs?

The Total capacitance between gate and channel of MOSFETs is the multiplication of oxide capacitance, length of the channel, and width of the channel and the oxide capacitance in the saturation region of MOSFET is calculated using Gate Channel Capacitance = Oxide Capacitance*Channel Width*Channel Length. To calculate Total Capacitance between Gate and Channel of MOSFETs, you need Oxide Capacitance (C_ox), Channel Width (W_c) & Channel Length (L). With our tool, you need to enter the respective value for Oxide Capacitance, Channel Width & Channel Length and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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