Thermal Voltage of CMOS Calculator

✖Built-in Potential is potential inside the MOSFET.ⓘ Built-in Potential [ψ_o]			+10% -10%
✖Acceptor Concentration is the concentration of holes in acceptor state.ⓘ Acceptor Concentration [N_a]			+10% -10%
✖Donor concentration is the concentration of electrons in the donor state.ⓘ Donor Concentration [N_d]			+10% -10%
✖Intrinsic Electron Concentration is defined as the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.ⓘ Intrinsic Electron Concentration [n_i]			+10% -10%

✖Thermal Voltage is the voltage produced within the p-n junction.ⓘ Thermal Voltage of CMOS [V_t]

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Thermal Voltage of CMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2))
V_t = ψ_o/ln((N_a*N_d)/(n_i^2))
This formula uses 1 Functions, 5 Variables

Functions Used

ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)

Variables Used

Thermal Voltage - (Measured in Volt) - Thermal Voltage is the voltage produced within the p-n junction.
Built-in Potential - (Measured in Volt) - Built-in Potential is potential inside the MOSFET.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration is the concentration of holes in acceptor state.
Donor Concentration - (Measured in 1 per Cubic Meter) - Donor concentration is the concentration of electrons in the donor state.
Intrinsic Electron Concentration - Intrinsic Electron Concentration is defined as the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

STEP 1: Convert Input(s) to Base Unit

Built-in Potential: 18.8 Volt --> 18.8 Volt No Conversion Required
Acceptor Concentration: 1100 1 per Cubic Meter --> 1100 1 per Cubic Meter No Conversion Required
Donor Concentration: 190000000000000 1 per Cubic Meter --> 190000000000000 1 per Cubic Meter No Conversion Required
Intrinsic Electron Concentration: 17 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_t = ψ_o/ln((N_a*N_d)/(n_i^2)) --> 18.8/ln((1100*190000000000000)/(17^2))

Evaluating ... ...

V_t = 0.549471683639064

STEP 3: Convert Result to Output's Unit

0.549471683639064 Volt --> No Conversion Required

FINAL ANSWER

0.549471683639064 ≈ 0.549472 Volt <-- Thermal Voltage

(Calculation completed in 00.008 seconds)

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< CMOS Design Characteristics Calculators

Built-in Potential

LaTeX Go Built-in Potential = Thermal Voltage*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2))

Capacitance Onpath

LaTeX Go Capacitance Onpath = Total Capacitance in Stage-Capacitance Offpath

Change in Frequency Clock

LaTeX Go Change in Frequency of Clock = VCO Gain*VCO Control Voltage

Static Current

LaTeX Go Static Current = Static Power/Base Collector Voltage

Thermal Voltage of CMOS Formula

LaTeX Go

Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2))
V_t = ψ_o/ln((N_a*N_d)/(n_i^2))

What is drive?

"Drive" in digital electronics refers to the ability of a logic gate or circuit to deliver current to its output, influencing how quickly the output voltage transitions between logic levels and playing a vital role in determining the overall performance of digital systems.

How to Calculate Thermal Voltage of CMOS?

Thermal Voltage of CMOS calculator uses Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2)) to calculate the Thermal Voltage, Thermal Voltage of CMOS is the voltage generated across a MOSFET device due to the temperature differences between the source and drain terminals. Thermal Voltage is denoted by V_t symbol.

How to calculate Thermal Voltage of CMOS using this online calculator? To use this online calculator for Thermal Voltage of CMOS, enter Built-in Potential (ψ_o), Acceptor Concentration (N_a), Donor Concentration (N_d) & Intrinsic Electron Concentration (n_i) and hit the calculate button. Here is how the Thermal Voltage of CMOS calculation can be explained with given input values -> 0.549472 = 18.8/ln((1100*190000000000000)/(17^2)).

FAQ

What is Thermal Voltage of CMOS?

Thermal Voltage of CMOS is the voltage generated across a MOSFET device due to the temperature differences between the source and drain terminals and is represented as V_t = ψ_o/ln((N_a*N_d)/(n_i^2)) or Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2)). Built-in Potential is potential inside the MOSFET, Acceptor Concentration is the concentration of holes in acceptor state, Donor concentration is the concentration of electrons in the donor state & Intrinsic Electron Concentration is defined as the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

How to calculate Thermal Voltage of CMOS?

Thermal Voltage of CMOS is the voltage generated across a MOSFET device due to the temperature differences between the source and drain terminals is calculated using Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2)). To calculate Thermal Voltage of CMOS, you need Built-in Potential (ψ_o), Acceptor Concentration (N_a), Donor Concentration (N_d) & Intrinsic Electron Concentration (n_i). With our tool, you need to enter the respective value for Built-in Potential, Acceptor Concentration, Donor Concentration & Intrinsic Electron Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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