Subthreshold Leakage through OFF Transistors Calculator

✖CMOS Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices.ⓘ CMOS Static Power [P_st]			+10% -10%
✖Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.ⓘ Base Collector Voltage [V_bc]			+10% -10%
✖Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance.ⓘ Gate Current [i_g]			+10% -10%
✖Contention Current is defined as the contention current occuring in the ratioed circuits.ⓘ Contention Current [i_con]			+10% -10%
✖Junction Current is junction leakage from source/drain diffusions.ⓘ Junction Current [i_j]			+10% -10%

✖Subthreshold Current is subthreshold leakage through OFF transistors.ⓘ Subthreshold Leakage through OFF Transistors [i_st]

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Subthreshold Leakage through OFF Transistors Solution

STEP 0: Pre-Calculation Summary

Formula Used

Subthreshold Current = (CMOS Static Power/Base Collector Voltage)-(Gate Current+Contention Current+Junction Current)
i_st = (P_st/V_bc)-(i_g+i_con+i_j)
This formula uses 6 Variables

Variables Used

Subthreshold Current - (Measured in Ampere) - Subthreshold Current is subthreshold leakage through OFF transistors.
CMOS Static Power - (Measured in Watt) - CMOS Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices.
Base Collector Voltage - (Measured in Volt) - Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.
Gate Current - (Measured in Ampere) - Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance.
Contention Current - (Measured in Ampere) - Contention Current is defined as the contention current occuring in the ratioed circuits.
Junction Current - (Measured in Ampere) - Junction Current is junction leakage from source/drain diffusions.

STEP 1: Convert Input(s) to Base Unit

CMOS Static Power: 67.37 Milliwatt --> 0.06737 Watt (Check conversion here)
Base Collector Voltage: 2.02 Volt --> 2.02 Volt No Conversion Required
Gate Current: 4.5 Milliampere --> 0.0045 Ampere (Check conversion here)
Contention Current: 25.75 Milliampere --> 0.02575 Ampere (Check conversion here)
Junction Current: 1.5 Milliampere --> 0.0015 Ampere (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

i_st = (P_st/V_bc)-(i_g+i_con+i_j) --> (0.06737/2.02)-(0.0045+0.02575+0.0015)

Evaluating ... ...

i_st = 0.00160148514851485

STEP 3: Convert Result to Output's Unit

0.00160148514851485 Ampere -->1.60148514851485 Milliampere (Check conversion here)

FINAL ANSWER

1.60148514851485 ≈ 1.601485 Milliampere <-- Subthreshold Current

(Calculation completed in 00.020 seconds)

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< CMOS Power Metrics Calculators

Activity Factor

LaTeX Go Activity Factor = Switching Power/(Capacitance*Base Collector Voltage^2*Frequency)

Switching Power

LaTeX Go Switching Power = Activity Factor*(Capacitance*Base Collector Voltage^2*Frequency)

Short-Circuit Power in CMOS

LaTeX Go Short-Circuit Power = Dynamic Power-Switching Power

Dynamic Power in CMOS

LaTeX Go Dynamic Power = Short-Circuit Power+Switching Power

Subthreshold Leakage through OFF Transistors Formula

LaTeX Go

Subthreshold Current = (CMOS Static Power/Base Collector Voltage)-(Gate Current+Contention Current+Junction Current)
i_st = (P_st/V_bc)-(i_g+i_con+i_j)

What are the sources of power dissipation in CMOS?

Power dissipation in CMOS circuits comes from two components. They are dynamic dissipation and static dissipation.

How to Calculate Subthreshold Leakage through OFF Transistors?

Subthreshold Leakage through OFF Transistors calculator uses Subthreshold Current = (CMOS Static Power/Base Collector Voltage)-(Gate Current+Contention Current+Junction Current) to calculate the Subthreshold Current, The Subthreshold leakage through OFF transistors formula is defined as subthreshold conduction or subthreshold leakage or subthreshold drain current, which is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage. Subthreshold Current is denoted by i_st symbol.

How to calculate Subthreshold Leakage through OFF Transistors using this online calculator? To use this online calculator for Subthreshold Leakage through OFF Transistors, enter CMOS Static Power (P_st), Base Collector Voltage (V_bc), Gate Current (i_g), Contention Current (i_con) & Junction Current (i_j) and hit the calculate button. Here is how the Subthreshold Leakage through OFF Transistors calculation can be explained with given input values -> 22231.49 = (0.06737/2.02)-(0.0045+0.02575+0.0015).

FAQ

What is Subthreshold Leakage through OFF Transistors?

The Subthreshold leakage through OFF transistors formula is defined as subthreshold conduction or subthreshold leakage or subthreshold drain current, which is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage and is represented as i_st = (P_st/V_bc)-(i_g+i_con+i_j) or Subthreshold Current = (CMOS Static Power/Base Collector Voltage)-(Gate Current+Contention Current+Junction Current). CMOS Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices, Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state, Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance, Contention Current is defined as the contention current occuring in the ratioed circuits & Junction Current is junction leakage from source/drain diffusions.

How to calculate Subthreshold Leakage through OFF Transistors?

The Subthreshold leakage through OFF transistors formula is defined as subthreshold conduction or subthreshold leakage or subthreshold drain current, which is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage is calculated using Subthreshold Current = (CMOS Static Power/Base Collector Voltage)-(Gate Current+Contention Current+Junction Current). To calculate Subthreshold Leakage through OFF Transistors, you need CMOS Static Power (P_st), Base Collector Voltage (V_bc), Gate Current (i_g), Contention Current (i_con) & Junction Current (i_j). With our tool, you need to enter the respective value for CMOS Static Power, Base Collector Voltage, Gate Current, Contention Current & Junction Current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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