LCM of two numbers

Subthreshold Slope Calculator

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✖Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor.ⓘ Source Body Potential Difference [V_sb]			+10% -10%
✖DIBL coefficient in a cmos device is resprented typically on the order of 0.1.ⓘ DIBL Coefficient [η]			+10% -10%

✖Sub Threshold Slope is a feature of a MOSFET's current-voltage characteristic.ⓘ Subthreshold Slope [S]

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Subthreshold Slope Solution

STEP 0: Pre-Calculation Summary

Formula Used

Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)
S = V_sb*η*ln(10)
This formula uses 1 Functions, 3 Variables

Functions Used

ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)

Variables Used

Sub Threshold Slope - Sub Threshold Slope is a feature of a MOSFET's current-voltage characteristic.
Source Body Potential Difference - (Measured in Volt) - Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor.
DIBL Coefficient - DIBL coefficient in a cmos device is resprented typically on the order of 0.1.

STEP 1: Convert Input(s) to Base Unit

Source Body Potential Difference: 1.36 Volt --> 1.36 Volt No Conversion Required
DIBL Coefficient: 0.2 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

S = V_sb*η*ln(10) --> 1.36*0.2*ln(10)

Evaluating ... ...

S = 0.626303145294381

STEP 3: Convert Result to Output's Unit

0.626303145294381 --> No Conversion Required

FINAL ANSWER

0.626303145294381 ≈ 0.626303 <-- Sub Threshold Slope

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< VLSI Material Optimization Calculators

Body Effect Coefficient

LaTeX Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

DIBL Coefficient

LaTeX Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Channel Charge

LaTeX Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Critical Voltage

LaTeX Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Subthreshold Slope Formula

LaTeX Go

Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)
S = V_sb*η*ln(10)

What does subthreshold slope indicates?

The subthreshold slope indicates how much the gate voltage must drop to decrease the leakage current by an order of magnitude. A typical value is 100 mV/decade at room temperature.

How to Calculate Subthreshold Slope?

Subthreshold Slope calculator uses Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10) to calculate the Sub Threshold Slope, The Subthreshold slope formula is defined as a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour, though being controlled by the gate terminal, is similar to the exponentially decreasing current of a forward biased diode. Sub Threshold Slope is denoted by S symbol.

How to calculate Subthreshold Slope using this online calculator? To use this online calculator for Subthreshold Slope, enter Source Body Potential Difference (V_sb) & DIBL Coefficient (η) and hit the calculate button. Here is how the Subthreshold Slope calculation can be explained with given input values -> 4.91648 = 1.36*0.2*ln(10).

FAQ

What is Subthreshold Slope?

The Subthreshold slope formula is defined as a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour, though being controlled by the gate terminal, is similar to the exponentially decreasing current of a forward biased diode and is represented as S = V_sb*η*ln(10) or Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10). Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor & DIBL coefficient in a cmos device is resprented typically on the order of 0.1.

How to calculate Subthreshold Slope?

The Subthreshold slope formula is defined as a feature of a MOSFET's current–voltage characteristic. In the subthreshold region, the drain current behaviour, though being controlled by the gate terminal, is similar to the exponentially decreasing current of a forward biased diode is calculated using Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10). To calculate Subthreshold Slope, you need Source Body Potential Difference (V_sb) & DIBL Coefficient (η). With our tool, you need to enter the respective value for Source Body Potential Difference & DIBL Coefficient and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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