Sidewall Voltage Equivalence Factor Calculator

✖Built in Potential of Sidewall Junctions refers to the junction formed along the vertical or sidewall surfaces of the transistor structure.ⓘ Built in Potential of Sidewall Junctions [Φ_osw]			+10% -10%
✖Final Voltage refers to the voltage level achieved or measured at the conclusion of a particular process or event.ⓘ Final Voltage [V₂]			+10% -10%
✖Initial Voltage refer to the voltage present at a specific point in a circuit at the beginning of a certain operation or under specific conditions.ⓘ Initial Voltage [V₁]			+10% -10%

✖Sidewall Voltage Equivalence Factor represents the relationship between the voltage applied to a semiconductor device and the resulting change in sidewall junction capacitance per unit area.ⓘ Sidewall Voltage Equivalence Factor [K_eq(sw)]

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Sidewall Voltage Equivalence Factor Solution

STEP 0: Pre-Calculation Summary

Formula Used

Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))
K_eq(sw) = -(2*sqrt(Φ_osw)/(V₂-V₁)*(sqrt(Φ_osw-V₂)-sqrt(Φ_osw-V₁)))
This formula uses 1 Functions, 4 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Sidewall Voltage Equivalence Factor - Sidewall Voltage Equivalence Factor represents the relationship between the voltage applied to a semiconductor device and the resulting change in sidewall junction capacitance per unit area.
Built in Potential of Sidewall Junctions - (Measured in Volt) - Built in Potential of Sidewall Junctions refers to the junction formed along the vertical or sidewall surfaces of the transistor structure.
Final Voltage - (Measured in Volt) - Final Voltage refers to the voltage level achieved or measured at the conclusion of a particular process or event.
Initial Voltage - (Measured in Volt) - Initial Voltage refer to the voltage present at a specific point in a circuit at the beginning of a certain operation or under specific conditions.

STEP 1: Convert Input(s) to Base Unit

Built in Potential of Sidewall Junctions: 3.2E-05 Volt --> 3.2E-05 Volt No Conversion Required
Final Voltage: 6.135 Nanovolt --> 6.135E-09 Volt (Check conversion here)
Initial Voltage: 5.42 Nanovolt --> 5.42E-09 Volt (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

K_eq(sw) = -(2*sqrt(Φ_osw)/(V₂-V₁)*(sqrt(Φ_osw-V₂)-sqrt(Φ_osw-V₁))) --> -(2*sqrt(3.2E-05)/(6.135E-09-5.42E-09)*(sqrt(3.2E-05-6.135E-09)-sqrt(3.2E-05-5.42E-09)))

Evaluating ... ...

K_eq(sw) = 1.00009028568687

STEP 3: Convert Result to Output's Unit

1.00009028568687 --> No Conversion Required

FINAL ANSWER

1.00009028568687 ≈ 1.00009 <-- Sidewall Voltage Equivalence Factor

(Calculation completed in 00.005 seconds)

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< MOS Transistor Calculators

Sidewall Voltage Equivalence Factor

LaTeX Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))

Fermi Potential for P Type

LaTeX Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)

Equivalent Large Signal Junction Capacitance

LaTeX Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor

Zero Bias Sidewall Junction Capacitance per Unit Length

LaTeX Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Sidewall Voltage Equivalence Factor Formula

LaTeX Go

How do sidewalls influence MOSFET behavior?

Sidewalls in MOSFETs can affect device characteristics, such as threshold voltage and subthreshold swing. Understanding sidewall properties is crucial for advanced transistor designs, including FinFETs and nanowire transistors.

How to Calculate Sidewall Voltage Equivalence Factor?

Sidewall Voltage Equivalence Factor calculator uses Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage))) to calculate the Sidewall Voltage Equivalence Factor, The Sidewall Voltage Equivalence Factor formula is defined as a parameter used in modeling the corner effects of the gate oxide thickness in Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices. Sidewall Voltage Equivalence Factor is denoted by K_eq(sw) symbol.

How to calculate Sidewall Voltage Equivalence Factor using this online calculator? To use this online calculator for Sidewall Voltage Equivalence Factor, enter Built in Potential of Sidewall Junctions (Φ_osw), Final Voltage (V₂) & Initial Voltage (V₁) and hit the calculate button. Here is how the Sidewall Voltage Equivalence Factor calculation can be explained with given input values -> 1.00009 = -(2*sqrt(3.2E-05)/(6.135E-09-5.42E-09)*(sqrt(3.2E-05-6.135E-09)-sqrt(3.2E-05-5.42E-09))).

FAQ

What is Sidewall Voltage Equivalence Factor?

The Sidewall Voltage Equivalence Factor formula is defined as a parameter used in modeling the corner effects of the gate oxide thickness in Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices and is represented as K_eq(sw) = -(2*sqrt(Φ_osw)/(V₂-V₁)*(sqrt(Φ_osw-V₂)-sqrt(Φ_osw-V₁))) or Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage))). Built in Potential of Sidewall Junctions refers to the junction formed along the vertical or sidewall surfaces of the transistor structure, Final Voltage refers to the voltage level achieved or measured at the conclusion of a particular process or event & Initial Voltage refer to the voltage present at a specific point in a circuit at the beginning of a certain operation or under specific conditions.

How to calculate Sidewall Voltage Equivalence Factor?

The Sidewall Voltage Equivalence Factor formula is defined as a parameter used in modeling the corner effects of the gate oxide thickness in Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) devices is calculated using Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage))). To calculate Sidewall Voltage Equivalence Factor, you need Built in Potential of Sidewall Junctions (Φ_osw), Final Voltage (V₂) & Initial Voltage (V₁). With our tool, you need to enter the respective value for Built in Potential of Sidewall Junctions, Final Voltage & Initial Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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