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Short Channel Saturation Current VLSI Calculator

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✖Channel Width is defined as the physical width of the semiconductor channel between the source and drain terminals within the transistor structure.ⓘ Channel Width [W_c]			+10% -10%
✖Saturation Electron Drift Velocity is defined as the maximum velocity reached by electrons in a semiconductor material under the influence of an electric field.ⓘ Saturation Electron Drift Velocity [v_d(sat)]			+10% -10%
✖Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.ⓘ Oxide Capacitance per Unit Area [C_oxide]			+10% -10%
✖Saturation Drain Source Voltage is defined as the voltage across the drain and source terminals of a MOSFET when the transistor is operating in saturation mode.ⓘ Saturation Drain Source Voltage [V_Dsat]			+10% -10%

✖Short Channel Saturation Current is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode.ⓘ Short Channel Saturation Current VLSI [I_D(sat)]

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Short Channel Saturation Current VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage
I_D(sat) = W_c*v_d(sat)*C_oxide*V_Dsat
This formula uses 5 Variables

Variables Used

Short Channel Saturation Current - (Measured in Ampere) - Short Channel Saturation Current is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode.
Channel Width - (Measured in Meter) - Channel Width is defined as the physical width of the semiconductor channel between the source and drain terminals within the transistor structure.
Saturation Electron Drift Velocity - (Measured in Meter per Second) - Saturation Electron Drift Velocity is defined as the maximum velocity reached by electrons in a semiconductor material under the influence of an electric field.
Oxide Capacitance per Unit Area - (Measured in Farad per Square Meter) - Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.
Saturation Drain Source Voltage - (Measured in Volt) - Saturation Drain Source Voltage is defined as the voltage across the drain and source terminals of a MOSFET when the transistor is operating in saturation mode.

STEP 1: Convert Input(s) to Base Unit

Channel Width: 2.5 Micrometer --> 2.5E-06 Meter (Check conversion here)
Saturation Electron Drift Velocity: 20000000 Centimeter per Second --> 200000 Meter per Second (Check conversion here)
Oxide Capacitance per Unit Area: 0.0703 Microfarad per Square Centimeter --> 0.000703 Farad per Square Meter (Check conversion here)
Saturation Drain Source Voltage: 1.5 Volt --> 1.5 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_D(sat) = W_c*v_d(sat)*C_oxide*V_Dsat --> 2.5E-06*200000*0.000703*1.5

Evaluating ... ...

I_D(sat) = 0.00052725

STEP 3: Convert Result to Output's Unit

0.00052725 Ampere -->527.25 Microampere (Check conversion here)

FINAL ANSWER

527.25 Microampere <-- Short Channel Saturation Current

(Calculation completed in 00.004 seconds)

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< VLSI Material Optimization Calculators

Body Effect Coefficient

LaTeX Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

DIBL Coefficient

LaTeX Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Channel Charge

LaTeX Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Critical Voltage

LaTeX Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Short Channel Saturation Current VLSI Formula

LaTeX Go

Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage
I_D(sat) = W_c*v_d(sat)*C_oxide*V_Dsat

Why is Short Channel Saturation Current important in VLSI?

In short-channel devices, the saturation current may deviate from the ideal behavior due to phenomena like velocity saturation, drain-induced barrier lowering (DIBL), and other quantum mechanical effects. Understanding and managing these effects are crucial for accurate circuit design in advanced VLSI technologies.

How to Calculate Short Channel Saturation Current VLSI?

Short Channel Saturation Current VLSI calculator uses Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage to calculate the Short Channel Saturation Current, The Short Channel Saturation Current VLSI formula is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode. Short Channel Saturation Current is denoted by I_D(sat) symbol.

How to calculate Short Channel Saturation Current VLSI using this online calculator? To use this online calculator for Short Channel Saturation Current VLSI, enter Channel Width (W_c), Saturation Electron Drift Velocity (v_d(sat)), Oxide Capacitance per Unit Area (C_oxide) & Saturation Drain Source Voltage (V_Dsat) and hit the calculate button. Here is how the Short Channel Saturation Current VLSI calculation can be explained with given input values -> 5.3E+8 = 2.5E-06*200000*0.000703*1.5.

FAQ

What is Short Channel Saturation Current VLSI?

The Short Channel Saturation Current VLSI formula is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode and is represented as I_D(sat) = W_c*v_d(sat)*C_oxide*V_Dsat or Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage. Channel Width is defined as the physical width of the semiconductor channel between the source and drain terminals within the transistor structure, Saturation Electron Drift Velocity is defined as the maximum velocity reached by electrons in a semiconductor material under the influence of an electric field, Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material & Saturation Drain Source Voltage is defined as the voltage across the drain and source terminals of a MOSFET when the transistor is operating in saturation mode.

How to calculate Short Channel Saturation Current VLSI?

The Short Channel Saturation Current VLSI formula is defined as the maximum current that can flow through a short-channel transistor when it is in saturation mode is calculated using Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage. To calculate Short Channel Saturation Current VLSI, you need Channel Width (W_c), Saturation Electron Drift Velocity (v_d(sat)), Oxide Capacitance per Unit Area (C_oxide) & Saturation Drain Source Voltage (V_Dsat). With our tool, you need to enter the respective value for Channel Width, Saturation Electron Drift Velocity, Oxide Capacitance per Unit Area & Saturation Drain Source Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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