What happens when Saturation voltage between drain and source increases?
As Vds increases, the number of electrons in the inversion layer decreases near the drain. This occurs due to two reasons. First, because both the gate and the drain are positively biased, the potential difference across the oxide is smaller near the drain end. Because the positive charge on the gate is determined by the potential drop across the gate oxide, the gate charge is smaller near the drain end. This implies that the amount of negative charge in the semiconductor needed to preserve charge neutrality will also be smaller near the drain. Consequently, the electron concentration in the inversion layer drops. Second, increasing the voltage on the drain increases the depletion width around the reverse-biased drain junction. Since more negative acceptor ions are uncovered, a fewer number of inversion layer electrons are needed to balance the gate charge. This implies that the electron density in the inversion layer near the drain would decrease even if the charge density on the gate was constant.
How to Calculate Saturation Voltage using Threshold Voltage?
Saturation Voltage using Threshold Voltage calculator uses Saturation Voltage = Gate Source Voltage-Threshold Voltage to calculate the Saturation Voltage, Saturation Voltage using Threshold Voltage in a field effective transistor is a voltage from collector to emitter required for saturation. Saturation Voltage is denoted by Vds symbol.
How to calculate Saturation Voltage using Threshold Voltage using this online calculator? To use this online calculator for Saturation Voltage using Threshold Voltage, enter Gate Source Voltage (Vgs) & Threshold Voltage (Vth) and hit the calculate button. Here is how the Saturation Voltage using Threshold Voltage calculation can be explained with given input values -> 0.55 = 1.25-0.7.