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Saturation Current in Transistor Calculator

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✖Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.ⓘ Charge [q]			+10% -10%
✖Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor.ⓘ Emitter Base Junction Area [A]			+10% -10%
✖The effective diffusion is a parameter related to the diffusion process of carriers and is influenced by material properties and the geometry of the semiconductor junction.ⓘ Effective Diffusion [D_n]			+10% -10%
✖Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.ⓘ Intrinsic Concentration [n_i]			+10% -10%
✖Total Impurity defines the impurities which is mix at atom per unit area in a base or the amount of impurity added to an intrinsic semiconductor varies its level of conductivity.ⓘ Total Impurity [Q_b]			+10% -10%

✖Saturation Current refers to the maximum current that can flow through the transistor when it is fully turned on.ⓘ Saturation Current in Transistor [I_sat]

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Saturation Current in Transistor Solution

STEP 0: Pre-Calculation Summary

Formula Used

Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity
I_sat = (q*A*D_n*n_i^2)/Q_b
This formula uses 6 Variables

Variables Used

Saturation Current - (Measured in Ampere) - Saturation Current refers to the maximum current that can flow through the transistor when it is fully turned on.
Charge - (Measured in Coulomb) - Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.
Emitter Base Junction Area - (Measured in Square Meter) - Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor.
Effective Diffusion - The effective diffusion is a parameter related to the diffusion process of carriers and is influenced by material properties and the geometry of the semiconductor junction.
Intrinsic Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
Total Impurity - (Measured in Square Meter) - Total Impurity defines the impurities which is mix at atom per unit area in a base or the amount of impurity added to an intrinsic semiconductor varies its level of conductivity.

STEP 1: Convert Input(s) to Base Unit

Charge: 5 Millicoulomb --> 0.005 Coulomb (Check conversion here)
Emitter Base Junction Area: 1.75 Square Centimeter --> 0.000175 Square Meter (Check conversion here)
Effective Diffusion: 0.5 --> No Conversion Required
Intrinsic Concentration: 1.32 1 per Cubic Centimeter --> 1320000 1 per Cubic Meter (Check conversion here)
Total Impurity: 3600000000 Square Centimeter --> 360000 Square Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_sat = (q*A*D_n*n_i^2)/Q_b --> (0.005*0.000175*0.5*1320000^2)/360000

Evaluating ... ...

I_sat = 2.1175

STEP 3: Convert Result to Output's Unit

2.1175 Ampere --> No Conversion Required

FINAL ANSWER

2.1175 Ampere <-- Saturation Current

(Calculation completed in 00.004 seconds)

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Created by Rahul Gupta

Chandigarh University (CU), Mohali, Punjab

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Vellore Institute of Technology (VIT Vellore), Vellore

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< Bipolar IC Fabrication Calculators

Conductivity of N-Type

LaTeX Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Ohmic Conductivity of Impurity

LaTeX Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Impurity with Intrinsic Concentration

LaTeX Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Breakout Voltage of Collector Emitter

LaTeX Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Saturation Current in Transistor Formula

LaTeX Go

Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity
I_sat = (q*A*D_n*n_i^2)/Q_b

What is a saturation effect?

Saturation is a combination of two distinct but related effects - soft-knee compression, and harmonic generation. Saturation occurs when a signal's input can no longer be matched by the output in a linear fashion; it can be used as a creative and sonically pleasing effect during audio production.

How to Calculate Saturation Current in Transistor?

Saturation Current in Transistor calculator uses Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity to calculate the Saturation Current, The Saturation Current in Transistor formula is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage. Saturation Current is denoted by I_sat symbol.

How to calculate Saturation Current in Transistor using this online calculator? To use this online calculator for Saturation Current in Transistor, enter Charge (q), Emitter Base Junction Area (A), Effective Diffusion (D_n), Intrinsic Concentration (n_i) & Total Impurity (Q_b) and hit the calculate button. Here is how the Saturation Current in Transistor calculation can be explained with given input values -> 2.1175 = (0.005*0.000175*0.5*1320000^2)/360000.

FAQ

What is Saturation Current in Transistor?

The Saturation Current in Transistor formula is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage and is represented as I_sat = (q*A*D_n*n_i^2)/Q_b or Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity. Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons, Emitter Base Junction Area is a P-N junction formed between the heavily doped P-type material (emitter) and the lightly doped N-type material (base) of the transistor, The effective diffusion is a parameter related to the diffusion process of carriers and is influenced by material properties and the geometry of the semiconductor junction, Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material & Total Impurity defines the impurities which is mix at atom per unit area in a base or the amount of impurity added to an intrinsic semiconductor varies its level of conductivity.

How to calculate Saturation Current in Transistor?

The Saturation Current in Transistor formula is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage is calculated using Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity. To calculate Saturation Current in Transistor, you need Charge (q), Emitter Base Junction Area (A), Effective Diffusion (D_n), Intrinsic Concentration (n_i) & Total Impurity (Q_b). With our tool, you need to enter the respective value for Charge, Emitter Base Junction Area, Effective Diffusion, Intrinsic Concentration & Total Impurity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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