Pull down Current in Saturation Region Calculator

✖Number of Parallel Driver Transistors refers to the number of parallel driver transistors in the circuit.ⓘ Number of Parallel Driver Transistors [n]			+10% -10%
✖Electron Mobility in MOSFET describes how easily electrons can move through the channel, directly impacting the current flow for a given voltage.ⓘ Electron Mobility [μ_n]			+10% -10%
✖Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle.ⓘ Channel Width [W]			+10% -10%
✖Channel Length in a MOSFET is the distance between the source and drain regions, determining how easily current flows and impacting transistor performance.ⓘ Channel Length [L]			+10% -10%
✖Gate Source Voltage is the voltage applied between the gate and source terminals of a MOSFET.ⓘ Gate Source Voltage [V_GS]			+10% -10%
✖Threshold Voltage is the minimum gate-to-source voltage required in a MOSFET to turn it "on" and allow a significant current to flow.ⓘ Threshold Voltage [V_T]			+10% -10%

✖Saturation Region Pull Down Current is the current through the resistor is when a pull-down resistor is used with an N-channel MOSFET in Saturation mode.ⓘ Pull down Current in Saturation Region [I_D(sat)]

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Pull down Current in Saturation Region Solution

STEP 0: Pre-Calculation Summary

Formula Used

Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2)
I_D(sat) = sum(x,0,n,(μ_n*C_ox/2)*(W/L)*(V_GS-V_T)^2)
This formula uses 1 Functions, 8 Variables

Functions Used

sum - Summation or sigma (∑) notation is a method used to write out a long sum in a concise way., sum(i, from, to, expr)

Variables Used

Saturation Region Pull Down Current - (Measured in Ampere) - Saturation Region Pull Down Current is the current through the resistor is when a pull-down resistor is used with an N-channel MOSFET in Saturation mode.
Number of Parallel Driver Transistors - Number of Parallel Driver Transistors refers to the number of parallel driver transistors in the circuit.
Electron Mobility - (Measured in Square Meter per Volt per Second) - Electron Mobility in MOSFET describes how easily electrons can move through the channel, directly impacting the current flow for a given voltage.
Oxide Capacitance - (Measured in Farad) - Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.
Channel Width - (Measured in Meter) - Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle.
Channel Length - (Measured in Meter) - Channel Length in a MOSFET is the distance between the source and drain regions, determining how easily current flows and impacting transistor performance.
Gate Source Voltage - (Measured in Volt) - Gate Source Voltage is the voltage applied between the gate and source terminals of a MOSFET.
Threshold Voltage - (Measured in Volt) - Threshold Voltage is the minimum gate-to-source voltage required in a MOSFET to turn it "on" and allow a significant current to flow.

STEP 1: Convert Input(s) to Base Unit

Number of Parallel Driver Transistors: 11 --> No Conversion Required
Electron Mobility: 9.92 Square Meter per Volt per Second --> 9.92 Square Meter per Volt per Second No Conversion Required
Oxide Capacitance: 3.9 Farad --> 3.9 Farad No Conversion Required
Channel Width: 2.678 Meter --> 2.678 Meter No Conversion Required
Channel Length: 3.45 Meter --> 3.45 Meter No Conversion Required
Gate Source Voltage: 29.65 Volt --> 29.65 Volt No Conversion Required
Threshold Voltage: 5.91 Volt --> 5.91 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_D(sat) = sum(x,0,n,(μ_n*C_ox/2)*(W/L)*(V_GS-V_T)^2) --> sum(x,0,11,(9.92*3.9/2)*(2.678/3.45)*(29.65-5.91)^2)

Evaluating ... ...

I_D(sat) = 101550.118939559

STEP 3: Convert Result to Output's Unit

101550.118939559 Ampere --> No Conversion Required

FINAL ANSWER

101550.118939559 ≈ 101550.1 Ampere <-- Saturation Region Pull Down Current

(Calculation completed in 00.004 seconds)

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Created by Vignesh Naidu

Vellore Institute of Technology (VIT), Vellore,Tamil Nadu

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Heritage Insitute of technology (HITK), Kolkata

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< MOS Transistor Calculators

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Pull down Current in Saturation Region Formula

LaTeX Go

What are the Applications of Pull down Current in Saturation Region ?

MOSFET Saturation: In the saturation region, the drain-source voltage reaches a point where increasing the gate-source voltage (V_GS) has minimal impact on the drain current (I_d). The current becomes relatively constant and is primarily determined by the device geometry and the applied V_GS.

How to Calculate Pull down Current in Saturation Region?

Pull down Current in Saturation Region calculator uses Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2) to calculate the Saturation Region Pull Down Current, The Pull down Current in Saturation Region formula is defined as the current through the resistor is when a pull-down resistor is used with an N-channel MOSFET in Saturation mode. Saturation Region Pull Down Current is denoted by I_D(sat) symbol.

How to calculate Pull down Current in Saturation Region using this online calculator? To use this online calculator for Pull down Current in Saturation Region, enter Number of Parallel Driver Transistors (n), Electron Mobility (μ_n), Oxide Capacitance (C_ox), Channel Width (W), Channel Length (L), Gate Source Voltage (V_GS) & Threshold Voltage (V_T) and hit the calculate button. Here is how the Pull down Current in Saturation Region calculation can be explained with given input values -> 101550.1 = sum(x,0,11,(9.92*3.9/2)*(2.678/3.45)*(29.65-5.91)^2).

FAQ

What is Pull down Current in Saturation Region?

The Pull down Current in Saturation Region formula is defined as the current through the resistor is when a pull-down resistor is used with an N-channel MOSFET in Saturation mode and is represented as I_D(sat) = sum(x,0,n,(μ_n*C_ox/2)*(W/L)*(V_GS-V_T)^2) or Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2). Number of Parallel Driver Transistors refers to the number of parallel driver transistors in the circuit, Electron Mobility in MOSFET describes how easily electrons can move through the channel, directly impacting the current flow for a given voltage, Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs, Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle, Channel Length in a MOSFET is the distance between the source and drain regions, determining how easily current flows and impacting transistor performance, Gate Source Voltage is the voltage applied between the gate and source terminals of a MOSFET & Threshold Voltage is the minimum gate-to-source voltage required in a MOSFET to turn it "on" and allow a significant current to flow.

How to calculate Pull down Current in Saturation Region?

The Pull down Current in Saturation Region formula is defined as the current through the resistor is when a pull-down resistor is used with an N-channel MOSFET in Saturation mode is calculated using Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2). To calculate Pull down Current in Saturation Region, you need Number of Parallel Driver Transistors (n), Electron Mobility (μ_n), Oxide Capacitance (C_ox), Channel Width (W), Channel Length (L), Gate Source Voltage (V_GS) & Threshold Voltage (V_T). With our tool, you need to enter the respective value for Number of Parallel Driver Transistors, Electron Mobility, Oxide Capacitance, Channel Width, Channel Length, Gate Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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