Process Transconductance Parameter of PMOS Calculator

✖Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field.ⓘ Mobility of Holes in Channel [μ_p]			+10% -10%
✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%

✖The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ Process Transconductance Parameter of PMOS [k'_p]

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Process Transconductance Parameter of PMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance
k'_p = μ_p*C_ox
This formula uses 3 Variables

Variables Used

Process Transconductance Parameter in PMOS - (Measured in Siemens) - The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Mobility of Holes in Channel - (Measured in Square Meter per Volt per Second) - Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

STEP 1: Convert Input(s) to Base Unit

Mobility of Holes in Channel: 2.66 Square Meter per Volt per Second --> 2.66 Square Meter per Volt per Second No Conversion Required
Oxide Capacitance: 0.0008 Farad --> 0.0008 Farad No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

k'_p = μ_p*C_ox --> 2.66*0.0008

Evaluating ... ...

k'_p = 0.002128

STEP 3: Convert Result to Output's Unit

0.002128 Siemens -->2.128 Millisiemens (Check conversion here)

FINAL ANSWER

2.128 Millisiemens <-- Process Transconductance Parameter in PMOS

(Calculation completed in 00.004 seconds)

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< P Channel Enhancement Calculators

Drain Current in Triode Region of PMOS Transistor

LaTeX Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Drain Current in Triode Region of PMOS Transistor given Vsd

LaTeX Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

LaTeX Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Drain Current in Saturation Region of PMOS Transistor given Vov

LaTeX Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Process Transconductance Parameter of PMOS Formula

LaTeX Go

Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance
k'_p = μ_p*C_ox

What is a MOSFET used for?

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is widely used for switching purposes and for the amplification of electronic signals in electronic devices.

What are the types of MOSFETs?

There are two classes of MOSFETs. There is depletion mode and there is enhancement mode. Each class is available as an n- or a p-channel, giving a total of four types of MOSFETs. Depletion mode comes in an N or a P and an enhancement mode comes in an N or a P

How to Calculate Process Transconductance Parameter of PMOS?

Process Transconductance Parameter of PMOS calculator uses Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance to calculate the Process Transconductance Parameter in PMOS, The process transconductance parameter of PMOS is the product of mobility of holes in the channel and oxide capacitance. Process Transconductance Parameter in PMOS is denoted by k'_p symbol.

How to calculate Process Transconductance Parameter of PMOS using this online calculator? To use this online calculator for Process Transconductance Parameter of PMOS, enter Mobility of Holes in Channel (μ_p) & Oxide Capacitance (C_ox) and hit the calculate button. Here is how the Process Transconductance Parameter of PMOS calculation can be explained with given input values -> 2128 = 2.66*0.0008.

FAQ

What is Process Transconductance Parameter of PMOS?

The process transconductance parameter of PMOS is the product of mobility of holes in the channel and oxide capacitance and is represented as k'_p = μ_p*C_ox or Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance. Mobility of holes in channel depends on various factors such as the crystal structure of the semiconductor material, the presence of impurities, the temperature, & the strength of the electric field & Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

How to calculate Process Transconductance Parameter of PMOS?

The process transconductance parameter of PMOS is the product of mobility of holes in the channel and oxide capacitance is calculated using Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance. To calculate Process Transconductance Parameter of PMOS, you need Mobility of Holes in Channel (μ_p) & Oxide Capacitance (C_ox). With our tool, you need to enter the respective value for Mobility of Holes in Channel & Oxide Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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