Potential between Source to Body Solution

STEP 0: Pre-Calculation Summary
Formula Used
Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration))
Vsb = Φs/(2*ln(NA/Ni))
This formula uses 1 Functions, 4 Variables
Functions Used
ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)
Variables Used
Source Body Potential Difference - (Measured in Volt) - Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor.
Surface Potential - (Measured in Volt) - Surface Potential is a key parameter in evaluating the DC property of thin-film transistors.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.
Intrinsic Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.
STEP 1: Convert Input(s) to Base Unit
Surface Potential: 6.86 Volt --> 6.86 Volt No Conversion Required
Acceptor Concentration: 1E+16 1 per Cubic Centimeter --> 1E+22 1 per Cubic Meter (Check conversion ​here)
Intrinsic Concentration: 14500000000 1 per Cubic Centimeter --> 1.45E+16 1 per Cubic Meter (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vsb = Φs/(2*ln(NA/Ni)) --> 6.86/(2*ln(1E+22/1.45E+16))
Evaluating ... ...
Vsb = 0.255133406849134
STEP 3: Convert Result to Output's Unit
0.255133406849134 Volt --> No Conversion Required
FINAL ANSWER
0.255133406849134 0.255133 Volt <-- Source Body Potential Difference
(Calculation completed in 00.020 seconds)

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Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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Analog VLSI Design Calculators

Gate to Base Capacitance
​ LaTeX ​ Go Gate to Base Capacitance = Gate Capacitance-(Gate to Source Capacitance+Gate to Drain Capacitance)
Drain Voltage
​ LaTeX ​ Go Base Collector Voltage = sqrt(Dynamic Power/(Frequency*Capacitance))
Gate to Channel Voltage
​ LaTeX ​ Go Gate to Channel Voltage = (Channel Charge/Gate Capacitance)+Threshold Voltage
Gate to Collector Potential
​ LaTeX ​ Go Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2

Potential between Source to Body Formula

​LaTeX ​Go
Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration))
Vsb = Φs/(2*ln(NA/Ni))

How do body affects the threshold voltage?

Transistors is a four terminals device. They are gate, source, drain, and body. When a voltage Vsb is applied between the source and body, it increases the amount of charge required to invert the channel, hence, it increases the threshold voltage. The body effect further degrades the performance of pass transistors trying to pass the weak value.

How to Calculate Potential between Source to Body?

Potential between Source to Body calculator uses Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration)) to calculate the Source Body Potential Difference, Potential between Source to Body means the voltage difference or electrical potential difference between the electrical source and the conductive body or component that is connected to it within an electrical circuit. Source Body Potential Difference is denoted by Vsb symbol.

How to calculate Potential between Source to Body using this online calculator? To use this online calculator for Potential between Source to Body, enter Surface Potential s), Acceptor Concentration (NA) & Intrinsic Concentration (Ni) and hit the calculate button. Here is how the Potential between Source to Body calculation can be explained with given input values -> 0.255133 = 6.86/(2*ln(1E+22/1.45E+16)).

FAQ

What is Potential between Source to Body?
Potential between Source to Body means the voltage difference or electrical potential difference between the electrical source and the conductive body or component that is connected to it within an electrical circuit and is represented as Vsb = Φs/(2*ln(NA/Ni)) or Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration)). Surface Potential is a key parameter in evaluating the DC property of thin-film transistors, Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material & Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.
How to calculate Potential between Source to Body?
Potential between Source to Body means the voltage difference or electrical potential difference between the electrical source and the conductive body or component that is connected to it within an electrical circuit is calculated using Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration)). To calculate Potential between Source to Body, you need Surface Potential s), Acceptor Concentration (NA) & Intrinsic Concentration (Ni). With our tool, you need to enter the respective value for Surface Potential, Acceptor Concentration & Intrinsic Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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