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PN Junction Depletion Depth with Source VLSI Calculator

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✖Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied.ⓘ Junction Built-in Voltage [Ø₀]			+10% -10%
✖Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.ⓘ Acceptor Concentration [N_A]			+10% -10%

✖P-n Junction Depletion Depth with Source is defined as the region around a p-n junction where charge carriers have been depleted due to the formation of an electric field.ⓘ PN Junction Depletion Depth with Source VLSI [x_dS]

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PN Junction Depletion Depth with Source VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))
x_dS = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Ø₀)/([Charge-e]*N_A))
This formula uses 3 Constants, 1 Functions, 3 Variables

Constants Used

[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Permitivity-vacuum] - Permittivity of vacuum Value Taken As 8.85E-12
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

P-n Junction Depletion Depth with Source - (Measured in Meter) - P-n Junction Depletion Depth with Source is defined as the region around a p-n junction where charge carriers have been depleted due to the formation of an electric field.
Junction Built-in Voltage - (Measured in Volt) - Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.

STEP 1: Convert Input(s) to Base Unit

Junction Built-in Voltage: 0.76 Volt --> 0.76 Volt No Conversion Required
Acceptor Concentration: 1E+16 1 per Cubic Centimeter --> 1E+22 1 per Cubic Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

x_dS = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Ø₀)/([Charge-e]*N_A)) --> sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*0.76)/([Charge-e]*1E+22))

Evaluating ... ...

x_dS = 3.13423217933622E-07

STEP 3: Convert Result to Output's Unit

3.13423217933622E-07 Meter -->0.313423217933622 Micrometer (Check conversion here)

FINAL ANSWER

0.313423217933622 ≈ 0.313423 Micrometer <-- P-n Junction Depletion Depth with Source

(Calculation completed in 00.020 seconds)

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< VLSI Material Optimization Calculators

Body Effect Coefficient

LaTeX Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

DIBL Coefficient

LaTeX Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Channel Charge

LaTeX Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Critical Voltage

LaTeX Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

PN Junction Depletion Depth with Source VLSI Formula

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How can VLSI designers control the p-n junction depletion depth?

VLSI designers can control the p-n junction depletion depth by adjusting the doping concentrations during the semiconductor fabrication process and by applying appropriate bias voltages across the junction.

How to Calculate PN Junction Depletion Depth with Source VLSI?

PN Junction Depletion Depth with Source VLSI calculator uses P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration)) to calculate the P-n Junction Depletion Depth with Source, The PN Junction Depletion Depth with Source VLSI formula is defined as the region around a p-n junction where charge carriers have been depleted due to the formation of an electric field. P-n Junction Depletion Depth with Source is denoted by x_dS symbol.

How to calculate PN Junction Depletion Depth with Source VLSI using this online calculator? To use this online calculator for PN Junction Depletion Depth with Source VLSI, enter Junction Built-in Voltage (Ø₀) & Acceptor Concentration (N_A) and hit the calculate button. Here is how the PN Junction Depletion Depth with Source VLSI calculation can be explained with given input values -> 313423.2 = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*0.76)/([Charge-e]*1E+22)).

FAQ

What is PN Junction Depletion Depth with Source VLSI?

The PN Junction Depletion Depth with Source VLSI formula is defined as the region around a p-n junction where charge carriers have been depleted due to the formation of an electric field and is represented as x_dS = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Ø₀)/([Charge-e]*N_A)) or P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration)). Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied & Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.

How to calculate PN Junction Depletion Depth with Source VLSI?

The PN Junction Depletion Depth with Source VLSI formula is defined as the region around a p-n junction where charge carriers have been depleted due to the formation of an electric field is calculated using P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration)). To calculate PN Junction Depletion Depth with Source VLSI, you need Junction Built-in Voltage (Ø₀) & Acceptor Concentration (N_A). With our tool, you need to enter the respective value for Junction Built-in Voltage & Acceptor Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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