Permittivity of Oxide Layer Calculator

✖The Oxide layer thickness tox is determined during the process technology which is used to fabricate the MOSFET.ⓘ Oxide Layer Thickness [t_ox]			+10% -10%
✖Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground).ⓘ Input Gate Capacitance [C_in]			+10% -10%
✖Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS.ⓘ Gate Width [W_g]			+10% -10%
✖Length of Gate is the measurement or extent of something from end to end.ⓘ Length of Gate [L_g]			+10% -10%

✖Permittivity of Oxide Layer is defined as the ability of a substance to store electrical energy in an electric field.ⓘ Permittivity of Oxide Layer [ε_ox]

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Permittivity of Oxide Layer Solution

STEP 0: Pre-Calculation Summary

Formula Used

Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
ε_ox = t_ox*C_in/(W_g*L_g)
This formula uses 5 Variables

Variables Used

Permittivity of Oxide Layer - (Measured in Farad per Meter) - Permittivity of Oxide Layer is defined as the ability of a substance to store electrical energy in an electric field.
Oxide Layer Thickness - (Measured in Meter) - The Oxide layer thickness tox is determined during the process technology which is used to fabricate the MOSFET.
Input Gate Capacitance - (Measured in Farad) - Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground).
Gate Width - (Measured in Meter) - Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS.
Length of Gate - (Measured in Meter) - Length of Gate is the measurement or extent of something from end to end.

STEP 1: Convert Input(s) to Base Unit

Oxide Layer Thickness: 4.98 Millimeter --> 0.00498 Meter (Check conversion here)
Input Gate Capacitance: 60.01 Microfarad --> 6.001E-05 Farad (Check conversion here)
Gate Width: 0.285 Millimeter --> 0.000285 Meter (Check conversion here)
Length of Gate: 7 Millimeter --> 0.007 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

ε_ox = t_ox*C_in/(W_g*L_g) --> 0.00498*6.001E-05/(0.000285*0.007)

Evaluating ... ...

ε_ox = 0.149799398496241

STEP 3: Convert Result to Output's Unit

0.149799398496241 Farad per Meter -->149.799398496241 Microfarad per Millimeter (Check conversion here)

FINAL ANSWER

149.799398496241 ≈ 149.7994 Microfarad per Millimeter <-- Permittivity of Oxide Layer

(Calculation completed in 00.004 seconds)

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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Permittivity of Oxide Layer Formula

LaTeX Go

Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
ε_ox = t_ox*C_in/(W_g*L_g)

What are the regions of operation in MOS transistors?

MOS transistors have three regions of operation which includes, cutoff or subthreshold region, linear region and saturation region.

How to Calculate Permittivity of Oxide Layer?

Permittivity of Oxide Layer calculator uses Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate) to calculate the Permittivity of Oxide Layer, The Permittivity of Oxide Layer formula is defined as the ability of a substance to store electrical energy in an electric field. Permittivity of Oxide Layer is denoted by ε_ox symbol.

How to calculate Permittivity of Oxide Layer using this online calculator? To use this online calculator for Permittivity of Oxide Layer, enter Oxide Layer Thickness (t_ox), Input Gate Capacitance (C_in), Gate Width (W_g) & Length of Gate (L_g) and hit the calculate button. Here is how the Permittivity of Oxide Layer calculation can be explained with given input values -> 149799.4 = 0.00498*6.001E-05/(0.000285*0.007).

FAQ

What is Permittivity of Oxide Layer?

The Permittivity of Oxide Layer formula is defined as the ability of a substance to store electrical energy in an electric field and is represented as ε_ox = t_ox*C_in/(W_g*L_g) or Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate). The Oxide layer thickness tox is determined during the process technology which is used to fabricate the MOSFET, Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground), Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS & Length of Gate is the measurement or extent of something from end to end.

How to calculate Permittivity of Oxide Layer?

The Permittivity of Oxide Layer formula is defined as the ability of a substance to store electrical energy in an electric field is calculated using Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate). To calculate Permittivity of Oxide Layer, you need Oxide Layer Thickness (t_ox), Input Gate Capacitance (C_in), Gate Width (W_g) & Length of Gate (L_g). With our tool, you need to enter the respective value for Oxide Layer Thickness, Input Gate Capacitance, Gate Width & Length of Gate and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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