Oxide Layer Thickness Calculator

✖Permittivity of Oxide Layer is defined as the ability of a substance to store electrical energy in an electric field.ⓘ Permittivity of Oxide Layer [ε_ox]			+10% -10%
✖Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS.ⓘ Gate Width [W_g]			+10% -10%
✖Length of Gate is the measurement or extent of something from end to end.ⓘ Length of Gate [L_g]			+10% -10%
✖Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground).ⓘ Input Gate Capacitance [C_in]			+10% -10%

✖The Oxide layer thickness tox is determined during the process technology which is used to fabricate the MOSFET.ⓘ Oxide Layer Thickness [t_ox]

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Oxide Layer Thickness Solution

STEP 0: Pre-Calculation Summary

Formula Used

Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
t_ox = ε_ox*W_g*L_g/C_in
This formula uses 5 Variables

Variables Used

Oxide Layer Thickness - (Measured in Meter) - The Oxide layer thickness tox is determined during the process technology which is used to fabricate the MOSFET.
Permittivity of Oxide Layer - (Measured in Farad per Meter) - Permittivity of Oxide Layer is defined as the ability of a substance to store electrical energy in an electric field.
Gate Width - (Measured in Meter) - Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS.
Length of Gate - (Measured in Meter) - Length of Gate is the measurement or extent of something from end to end.
Input Gate Capacitance - (Measured in Farad) - Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground).

STEP 1: Convert Input(s) to Base Unit

Permittivity of Oxide Layer: 149.79 Microfarad per Millimeter --> 0.14979 Farad per Meter (Check conversion here)
Gate Width: 0.285 Millimeter --> 0.000285 Meter (Check conversion here)
Length of Gate: 7 Millimeter --> 0.007 Meter (Check conversion here)
Input Gate Capacitance: 60.01 Microfarad --> 6.001E-05 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

t_ox = ε_ox*W_g*L_g/C_in --> 0.14979*0.000285*0.007/6.001E-05

Evaluating ... ...

t_ox = 0.00497968755207465

STEP 3: Convert Result to Output's Unit

0.00497968755207465 Meter -->4.97968755207465 Millimeter (Check conversion here)

FINAL ANSWER

4.97968755207465 ≈ 4.979688 Millimeter <-- Oxide Layer Thickness

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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Oxide Layer Thickness Formula

LaTeX Go

Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
t_ox = ε_ox*W_g*L_g/C_in

What are the regions of operation in MOS transistors?

MOS transistors have three regions of operation which includes, cutoff or subthreshold region, linear region and saturation region.

How to Calculate Oxide Layer Thickness?

Oxide Layer Thickness calculator uses Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance to calculate the Oxide Layer Thickness, The Oxide Layer Thickness formula is defined as is the thickness of silicon oxide film that provides the same electrical performance. Oxide Layer Thickness is denoted by t_ox symbol.

How to calculate Oxide Layer Thickness using this online calculator? To use this online calculator for Oxide Layer Thickness, enter Permittivity of Oxide Layer (ε_ox), Gate Width (W_g), Length of Gate (L_g) & Input Gate Capacitance (C_in) and hit the calculate button. Here is how the Oxide Layer Thickness calculation can be explained with given input values -> 4.986669 = 0.14979*0.000285*0.007/6.001E-05.

FAQ

What is Oxide Layer Thickness?

The Oxide Layer Thickness formula is defined as is the thickness of silicon oxide film that provides the same electrical performance and is represented as t_ox = ε_ox*W_g*L_g/C_in or Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance. Permittivity of Oxide Layer is defined as the ability of a substance to store electrical energy in an electric field, Gate Width refers to the distance between the edge of a metal gate electrode and the adjacent semiconductor material in a CMOS, Length of Gate is the measurement or extent of something from end to end & Input Gate Capacitance in CMOS refers to the capacitance between the input terminals of a CMOS circuit and the reference potential (usually ground).

How to calculate Oxide Layer Thickness?

The Oxide Layer Thickness formula is defined as is the thickness of silicon oxide film that provides the same electrical performance is calculated using Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance. To calculate Oxide Layer Thickness, you need Permittivity of Oxide Layer (ε_ox), Gate Width (W_g), Length of Gate (L_g) & Input Gate Capacitance (C_in). With our tool, you need to enter the respective value for Permittivity of Oxide Layer, Gate Width, Length of Gate & Input Gate Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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