LCM calculator

Oxide Capacitance after Full Scaling VLSI Calculator

Engineering Chemistry Financial Health More >>

↳

Electronics Chemical Engineering Civil Electrical More >>

⤿

VLSI Fabrication Amplifiers Analog Communications Analog Electronics More >>

⤿

VLSI Material Optimization Analog VLSI Design

✖Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.ⓘ Oxide Capacitance per Unit Area [C_oxide]			+10% -10%
✖Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.ⓘ Scaling Factor [Sf]			+10% -10%

✖Oxide Capacitance after Full Scaling is referred to new capacitance after reducing the dimensions of the MOSFET by full scaling.ⓘ Oxide Capacitance after Full Scaling VLSI [C_oxide']

⎘ Copy

👎

Formula

✖

Oxide Capacitance after Full Scaling VLSI

Formula

C oxide' = C oxide \cdot Sf

Example

0.10545 μF/cm² = 0.0703 μF/cm² \cdot 1.5

Calculator

LaTeX

Reset

👍

Download Electronics Formula PDF PDF Image

Oxide Capacitance after Full Scaling VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor
C_oxide' = C_oxide*Sf
This formula uses 3 Variables

Variables Used

Oxide Capacitance after Full Scaling - (Measured in Farad per Square Meter) - Oxide Capacitance after Full Scaling is referred to new capacitance after reducing the dimensions of the MOSFET by full scaling.
Oxide Capacitance per Unit Area - (Measured in Farad per Square Meter) - Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.
Scaling Factor - Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.

STEP 1: Convert Input(s) to Base Unit

Oxide Capacitance per Unit Area: 0.0703 Microfarad per Square Centimeter --> 0.000703 Farad per Square Meter (Check conversion here)
Scaling Factor: 1.5 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_oxide' = C_oxide*Sf --> 0.000703*1.5

Evaluating ... ...

C_oxide' = 0.0010545

STEP 3: Convert Result to Output's Unit

0.0010545 Farad per Square Meter -->0.10545 Microfarad per Square Centimeter (Check conversion here)

FINAL ANSWER

0.10545 Microfarad per Square Centimeter <-- Oxide Capacitance after Full Scaling

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » VLSI Fabrication » VLSI Material Optimization » Oxide Capacitance after Full Scaling VLSI

Credits

Created by Priyanka Patel

Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad

Priyanka Patel has created this Calculator and 25+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

< VLSI Material Optimization Calculators

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Channel Charge

Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Oxide Capacitance after Full Scaling VLSI Formula

Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor
C_oxide' = C_oxide*Sf

Why does Oxide Capacitance increase after Full Scaling in VLSI?

As the gate oxide thickness decreases during scaling, the capacitance per unit area (Oxide Capacitance) increases.

How to Calculate Oxide Capacitance after Full Scaling VLSI?

Oxide Capacitance after Full Scaling VLSI calculator uses Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor to calculate the Oxide Capacitance after Full Scaling, The Oxide Capacitance after Full Scaling VLSI formula is defined as new capacitance after reducing the dimensions of the MOSFET by full scaling. Oxide Capacitance after Full Scaling is denoted by C_oxide' symbol.

How to calculate Oxide Capacitance after Full Scaling VLSI using this online calculator? To use this online calculator for Oxide Capacitance after Full Scaling VLSI, enter Oxide Capacitance per Unit Area (C_oxide) & Scaling Factor (Sf) and hit the calculate button. Here is how the Oxide Capacitance after Full Scaling VLSI calculation can be explained with given input values -> 10.545 = 0.000703*1.5.

FAQ

What is Oxide Capacitance after Full Scaling VLSI?

The Oxide Capacitance after Full Scaling VLSI formula is defined as new capacitance after reducing the dimensions of the MOSFET by full scaling and is represented as C_oxide' = C_oxide*Sf or Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor. Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material & Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.

How to calculate Oxide Capacitance after Full Scaling VLSI?

The Oxide Capacitance after Full Scaling VLSI formula is defined as new capacitance after reducing the dimensions of the MOSFET by full scaling is calculated using Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor. To calculate Oxide Capacitance after Full Scaling VLSI, you need Oxide Capacitance per Unit Area (C_oxide) & Scaling Factor (Sf). With our tool, you need to enter the respective value for Oxide Capacitance per Unit Area & Scaling Factor and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search