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Oxide Capacitance after Voltage Scaling VLSI Calculator

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✖Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.ⓘ Scaling Factor [Sf]			+10% -10%
✖Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.ⓘ Oxide Capacitance per Unit Area [C_oxide]			+10% -10%

✖Oxide capacitance after voltage scaling is refers to the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling.ⓘ Oxide Capacitance after Voltage Scaling VLSI [C_ox(vs)']

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Oxide Capacitance after Voltage Scaling VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area
C_ox(vs)' = Sf*C_oxide
This formula uses 3 Variables

Variables Used

Oxide capacitance after voltage scaling - (Measured in Farad per Square Meter) - Oxide capacitance after voltage scaling is refers to the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling.
Scaling Factor - Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.
Oxide Capacitance per Unit Area - (Measured in Farad per Square Meter) - Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.

STEP 1: Convert Input(s) to Base Unit

Scaling Factor: 1.5 --> No Conversion Required
Oxide Capacitance per Unit Area: 0.0703 Microfarad per Square Centimeter --> 0.000703 Farad per Square Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_ox(vs)' = Sf*C_oxide --> 1.5*0.000703

Evaluating ... ...

C_ox(vs)' = 0.0010545

STEP 3: Convert Result to Output's Unit

0.0010545 Farad per Square Meter -->105.45 Nanofarad per Square Centimeter (Check conversion here)

FINAL ANSWER

105.45 Nanofarad per Square Centimeter <-- Oxide capacitance after voltage scaling

(Calculation completed in 00.004 seconds)

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Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad

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Oxide Capacitance after Voltage Scaling VLSI Formula

LaTeX Go

Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area
C_ox(vs)' = Sf*C_oxide

How does oxide capacitance impact the performance of MOSFETs in high-frequency applications?

In high-frequency applications, such as RF (radio frequency) circuits and high-speed digital circuits, oxide capacitance in MOSFETs plays a crucial role in determining the device's performance. The oxide capacitance affects the speed at which the transistor can switch states, as well as its ability to maintain signal integrity at higher frequencies.

How to Calculate Oxide Capacitance after Voltage Scaling VLSI?

Oxide Capacitance after Voltage Scaling VLSI calculator uses Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area to calculate the Oxide capacitance after voltage scaling, The Oxide Capacitance after Voltage Scaling VLSI formula is defined as the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling. Oxide capacitance after voltage scaling is denoted by C_ox(vs)' symbol.

How to calculate Oxide Capacitance after Voltage Scaling VLSI using this online calculator? To use this online calculator for Oxide Capacitance after Voltage Scaling VLSI, enter Scaling Factor (Sf) & Oxide Capacitance per Unit Area (C_oxide) and hit the calculate button. Here is how the Oxide Capacitance after Voltage Scaling VLSI calculation can be explained with given input values -> 1.1E+7 = 1.5*0.000703.

FAQ

What is Oxide Capacitance after Voltage Scaling VLSI?

The Oxide Capacitance after Voltage Scaling VLSI formula is defined as the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling and is represented as C_ox(vs)' = Sf*C_oxide or Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area. Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process & Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.

How to calculate Oxide Capacitance after Voltage Scaling VLSI?

The Oxide Capacitance after Voltage Scaling VLSI formula is defined as the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling is calculated using Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area. To calculate Oxide Capacitance after Voltage Scaling VLSI, you need Scaling Factor (Sf) & Oxide Capacitance per Unit Area (C_oxide). With our tool, you need to enter the respective value for Scaling Factor & Oxide Capacitance per Unit Area and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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