Overdrive Voltage of PMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)
Vov = VGS-modulus(VT)
This formula uses 1 Functions, 3 Variables
Functions Used
modulus - Modulus of a number is the remainder when that number is divided by another number., modulus
Variables Used
Effective Voltage - (Measured in Volt) - Effective voltage is the equivalent DC voltage that would produce the same amount of power dissipation in a resistive load as the AC voltage being measured.
Voltage between Gate and Source - (Measured in Volt) - The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
STEP 1: Convert Input(s) to Base Unit
Voltage between Gate and Source: 2.86 Volt --> 2.86 Volt No Conversion Required
Threshold Voltage: 0.7 Volt --> 0.7 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vov = VGS-modulus(VT) --> 2.86-modulus(0.7)
Evaluating ... ...
Vov = 2.16
STEP 3: Convert Result to Output's Unit
2.16 Volt --> No Conversion Required
FINAL ANSWER
2.16 Volt <-- Effective Voltage
(Calculation completed in 00.004 seconds)

Credits

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Created by Payal Priya
Birsa Institute of Technology (BIT), Sindri
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P Channel Enhancement Calculators

Drain Current in Triode Region of PMOS Transistor
​ LaTeX ​ Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)
Drain Current in Triode Region of PMOS Transistor given Vsd
​ LaTeX ​ Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source
Drain Current in Saturation Region of PMOS Transistor
​ LaTeX ​ Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2
Drain Current in Saturation Region of PMOS Transistor given Vov
​ LaTeX ​ Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Overdrive Voltage of PMOS Formula

​LaTeX ​Go
Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)
Vov = VGS-modulus(VT)

Why is threshold voltage negative in PMOS?

Typically, threshold voltage is the Vgs voltage required to start forming the channel referred to as channel inversion. In case of PMOS, the bulk/substrate and the source terminals are connected to Vdd. With reference to the source terminal, if you start reducing your gate voltage from Vdd (exactly opposite to NMOS where you start your gate voltage from zero) to a point where you observe the channel inversion, at this point if you calculate Vgs and source being at the higher potential, you get a negative value. This is why you have a negative value of Vth for a PMOS. With a similar argument, you will see that NMOS will have a positive Vth.

How to Calculate Overdrive Voltage of PMOS?

Overdrive Voltage of PMOS calculator uses Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage) to calculate the Effective Voltage, The Overdrive voltage of PMOS formula is defined as the voltage between transistor gate and source (VGS) in excess of the threshold voltage (VTH) where VTH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity). Effective Voltage is denoted by Vov symbol.

How to calculate Overdrive Voltage of PMOS using this online calculator? To use this online calculator for Overdrive Voltage of PMOS, enter Voltage between Gate and Source (VGS) & Threshold Voltage (VT) and hit the calculate button. Here is how the Overdrive Voltage of PMOS calculation can be explained with given input values -> 2.16 = 2.86-modulus(0.7).

FAQ

What is Overdrive Voltage of PMOS?
The Overdrive voltage of PMOS formula is defined as the voltage between transistor gate and source (VGS) in excess of the threshold voltage (VTH) where VTH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity) and is represented as Vov = VGS-modulus(VT) or Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage). The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
How to calculate Overdrive Voltage of PMOS?
The Overdrive voltage of PMOS formula is defined as the voltage between transistor gate and source (VGS) in excess of the threshold voltage (VTH) where VTH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity) is calculated using Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage). To calculate Overdrive Voltage of PMOS, you need Voltage between Gate and Source (VGS) & Threshold Voltage (VT). With our tool, you need to enter the respective value for Voltage between Gate and Source & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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