Overall Effective Voltage of MOSFET Transconductance Calculator

✖Saturation drain current is defined as the subthreshold current and varies exponentially with gate to source voltage.ⓘ Saturation Drain Current [i_ds]			+10% -10%
✖Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance.ⓘ Process Transconductance Parameter [k'_n]			+10% -10%
✖Width of Channel is the dimension of the channel of MOSFET.ⓘ Width of Channel [W_c]			+10% -10%
✖The length of channel, L, which is the distance between the two -p junctions.ⓘ Length of Channel [L]			+10% -10%

✖Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed.ⓘ Overall Effective Voltage of MOSFET Transconductance [V_ov]

⎘ Copy

👎

Formula

LaTeX

Reset

👍

Download Transistor Amplifier Characteristics Formulas PDF PDF Image

Overall Effective Voltage of MOSFET Transconductance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Effective Voltage = sqrt(2*Saturation Drain Current/(Process Transconductance Parameter*(Width of Channel/Length of Channel)))
V_ov = sqrt(2*i_ds/(k'_n*(W_c/L)))
This formula uses 1 Functions, 5 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Effective Voltage - (Measured in Volt) - Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termed.
Saturation Drain Current - (Measured in Ampere) - Saturation drain current is defined as the subthreshold current and varies exponentially with gate to source voltage.
Process Transconductance Parameter - (Measured in Ampere per Square Volt) - Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance.
Width of Channel - (Measured in Meter) - Width of Channel is the dimension of the channel of MOSFET.
Length of Channel - (Measured in Meter) - The length of channel, L, which is the distance between the two -p junctions.

STEP 1: Convert Input(s) to Base Unit

Saturation Drain Current: 4.721 Milliampere --> 0.004721 Ampere (Check conversion here)
Process Transconductance Parameter: 0.2 Ampere per Square Volt --> 0.2 Ampere per Square Volt No Conversion Required
Width of Channel: 10.15 Micrometer --> 1.015E-05 Meter (Check conversion here)
Length of Channel: 3.25 Micrometer --> 3.25E-06 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_ov = sqrt(2*i_ds/(k'_n*(W_c/L))) --> sqrt(2*0.004721/(0.2*(1.015E-05/3.25E-06)))

Evaluating ... ...

V_ov = 0.122949186508306

STEP 3: Convert Result to Output's Unit

0.122949186508306 Volt --> No Conversion Required

FINAL ANSWER

0.122949186508306 ≈ 0.122949 Volt <-- Effective Voltage

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » Amplifiers » Transistor Amplifiers » Transistor Amplifier Characteristics » Overall Effective Voltage of MOSFET Transconductance

Credits

Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

Payal Priya has created this Calculator and 600+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< Transistor Amplifier Characteristics Calculators

Current Flowing through Induced Channel in Transistor given Oxide Voltage

LaTeX Go Output Current = (Mobility of Electron*Oxide Capacitance*(Width of Channel/Length of Channel)*(Voltage across Oxide-Threshold Voltage))*Saturation Voltage between Drain and Source

Current Entering Drain Terminal of MOSFET at Saturation

LaTeX Go Saturation Drain Current = 1/2*Process Transconductance Parameter*(Width of Channel/Length of Channel)*(Effective Voltage)^2

Total Instantaneous Drain Voltage

LaTeX Go Total Instantaneous Drain Voltage = Fundamental Component Voltage-Drain Resistance*Drain Current

Input Voltage in Transistor

LaTeX Go Fundamental Component Voltage = Drain Resistance*Drain Current-Total Instantaneous Drain Voltage

Overall Effective Voltage of MOSFET Transconductance Formula

LaTeX Go

Effective Voltage = sqrt(2*Saturation Drain Current/(Process Transconductance Parameter*(Width of Channel/Length of Channel)))
V_ov = sqrt(2*i_ds/(k'_n*(W_c/L)))

What is the difference between impedance and resistance?

Resistance is simply defined as the opposition to the flow of electric current in the circuit. Impedance is opposition to the flow of AC current because of any three components that is resistive, inductive or capacitive. It is a combination of both resistance and reactance in a circuit.

How to Calculate Overall Effective Voltage of MOSFET Transconductance?

Overall Effective Voltage of MOSFET Transconductance calculator uses Effective Voltage = sqrt(2*Saturation Drain Current/(Process Transconductance Parameter*(Width of Channel/Length of Channel))) to calculate the Effective Voltage, Overall Effective Voltage of MOSFET Transconductance is the voltage applied across a device or system, taking into account any voltage drops along the circuit path. Effective Voltage is denoted by V_ov symbol.

How to calculate Overall Effective Voltage of MOSFET Transconductance using this online calculator? To use this online calculator for Overall Effective Voltage of MOSFET Transconductance, enter Saturation Drain Current (i_ds), Process Transconductance Parameter (k'_n), Width of Channel (W_c) & Length of Channel (L) and hit the calculate button. Here is how the Overall Effective Voltage of MOSFET Transconductance calculation can be explained with given input values -> 0.122949 = sqrt(2*0.004721/(0.2*(1.015E-05/3.25E-06))).

FAQ

What is Overall Effective Voltage of MOSFET Transconductance?

Overall Effective Voltage of MOSFET Transconductance is the voltage applied across a device or system, taking into account any voltage drops along the circuit path and is represented as V_ov = sqrt(2*i_ds/(k'_n*(W_c/L))) or Effective Voltage = sqrt(2*Saturation Drain Current/(Process Transconductance Parameter*(Width of Channel/Length of Channel))). Saturation drain current is defined as the subthreshold current and varies exponentially with gate to source voltage, Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance, Width of Channel is the dimension of the channel of MOSFET & The length of channel, L, which is the distance between the two -p junctions.

How to calculate Overall Effective Voltage of MOSFET Transconductance?

Overall Effective Voltage of MOSFET Transconductance is the voltage applied across a device or system, taking into account any voltage drops along the circuit path is calculated using Effective Voltage = sqrt(2*Saturation Drain Current/(Process Transconductance Parameter*(Width of Channel/Length of Channel))). To calculate Overall Effective Voltage of MOSFET Transconductance, you need Saturation Drain Current (i_ds), Process Transconductance Parameter (k'_n), Width of Channel (W_c) & Length of Channel (L). With our tool, you need to enter the respective value for Saturation Drain Current, Process Transconductance Parameter, Width of Channel & Length of Channel and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search