Output Resistance at Another Drain of Controlled Source Transistor Calculator

✖The Resistance of Secondary Winding in Primary of a MOSFET is the opposition to the current flowing through it. It depends on the specific MOSFET design and the operating conditions.ⓘ Resistance of Secondary Winding in Primary [R₂]			+10% -10%
✖A finite resistance simply means that the resistance in a circuit is not infinite or zero. In other words, the circuit has some amount of resistance, which can affect the behavior of the circuit.ⓘ Finite Resistance [R_fi]			+10% -10%
✖MOSFET Primary Transconductance is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage.ⓘ MOSFET Primary Transconductance [g_mp]			+10% -10%

✖Drain resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage.ⓘ Output Resistance at Another Drain of Controlled Source Transistor [R_d]

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Output Resistance at Another Drain of Controlled Source Transistor Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Resistance = Resistance of Secondary Winding in Primary+2*Finite Resistance+2*Finite Resistance*MOSFET Primary Transconductance*Resistance of Secondary Winding in Primary
R_d = R₂+2*R_fi+2*R_fi*g_mp*R₂
This formula uses 4 Variables

Variables Used

Drain Resistance - (Measured in Ohm) - Drain resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage.
Resistance of Secondary Winding in Primary - (Measured in Ohm) - The Resistance of Secondary Winding in Primary of a MOSFET is the opposition to the current flowing through it. It depends on the specific MOSFET design and the operating conditions.
Finite Resistance - (Measured in Ohm) - A finite resistance simply means that the resistance in a circuit is not infinite or zero. In other words, the circuit has some amount of resistance, which can affect the behavior of the circuit.
MOSFET Primary Transconductance - (Measured in Siemens) - MOSFET Primary Transconductance is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage.

STEP 1: Convert Input(s) to Base Unit

Resistance of Secondary Winding in Primary: 0.064 Kilohm --> 64 Ohm (Check conversion here)
Finite Resistance: 0.065 Kilohm --> 65 Ohm (Check conversion here)
MOSFET Primary Transconductance: 19.77 Millisiemens --> 0.01977 Siemens (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

R_d = R₂+2*R_fi+2*R_fi*g_mp*R₂ --> 64+2*65+2*65*0.01977*64

Evaluating ... ...

R_d = 358.4864

STEP 3: Convert Result to Output's Unit

358.4864 Ohm -->0.3584864 Kilohm (Check conversion here)

FINAL ANSWER

0.3584864 ≈ 0.358486 Kilohm <-- Drain Resistance

(Calculation completed in 00.004 seconds)

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< Common Source Amplifier Calculators

Overall Feedback Voltage Gain of Common-Source Amplifier

LaTeX Go Feedback Voltage Gain = -MOSFET Primary Transconductance*(Input Resistance/(Input Resistance+Signal Resistance))*(1/Drain Resistance+1/Load Resistance+1/Finite Output Resistance)^-1

Open-Circuit Voltage Gain of CS Amplifier

LaTeX Go Open Circuit Voltage Gain = Finite Output Resistance/(Finite Output Resistance+1/MOSFET Primary Transconductance)

Current Gain of Controlled Source Transistor

LaTeX Go Current Gain = 1/(1+1/(MOSFET Primary Transconductance*Resistance between Drain and Ground))

Total Voltage Gain of CS Amplifier

LaTeX Go Voltage Gain = Load Voltage/Input Voltage

< CV Actions of Common Stage Amplifiers Calculators

Input Resistance of Common Emitter Amplifier

LaTeX Go Input Resistance = (1/Base Resistance+1/Base Resistance 2+1/Small Signal Input Resistance)^-1

Input Impedance of Common-Base Amplifier

LaTeX Go Input Impedance = (1/Emitter Resistance+1/Small Signal Input Resistance)^(-1)

Fundamental Voltage in Common-Emitter Amplifier

LaTeX Go Fundamental Component Voltage = Input Resistance*Base Current

Emitter Current of Common-Base Amplifier

LaTeX Go Emitter Current = Input Voltage/Emitter Resistance

Output Resistance at Another Drain of Controlled Source Transistor Formula

LaTeX Go

What is a controlled current source?

A controlled or dependent current source on the other hand changes its available current depending upon the voltage across, or the current through, some other element connected to the circuit. A current source that depends on a current input is generally referred to as a Current Controlled Current Source or CCCS.

How to Calculate Output Resistance at Another Drain of Controlled Source Transistor?

Output Resistance at Another Drain of Controlled Source Transistor calculator uses Drain Resistance = Resistance of Secondary Winding in Primary+2*Finite Resistance+2*Finite Resistance*MOSFET Primary Transconductance*Resistance of Secondary Winding in Primary to calculate the Drain Resistance, The Output resistance at another drain of controlled source transistor formula is defined as simply the parallel combination of the Emitter (Source) resistor RL and the small-signal emitter (source) resistance of the transistor r_E. Drain Resistance is denoted by R_d symbol.

How to calculate Output Resistance at Another Drain of Controlled Source Transistor using this online calculator? To use this online calculator for Output Resistance at Another Drain of Controlled Source Transistor, enter Resistance of Secondary Winding in Primary (R₂), Finite Resistance (R_fi) & MOSFET Primary Transconductance (g_mp) and hit the calculate button. Here is how the Output Resistance at Another Drain of Controlled Source Transistor calculation can be explained with given input values -> 0.000358 = 64+2*65+2*65*0.01977*64.

FAQ

What is Output Resistance at Another Drain of Controlled Source Transistor?

The Output resistance at another drain of controlled source transistor formula is defined as simply the parallel combination of the Emitter (Source) resistor RL and the small-signal emitter (source) resistance of the transistor r_E and is represented as R_d = R₂+2*R_fi+2*R_fi*g_mp*R₂ or Drain Resistance = Resistance of Secondary Winding in Primary+2*Finite Resistance+2*Finite Resistance*MOSFET Primary Transconductance*Resistance of Secondary Winding in Primary. The Resistance of Secondary Winding in Primary of a MOSFET is the opposition to the current flowing through it. It depends on the specific MOSFET design and the operating conditions, A finite resistance simply means that the resistance in a circuit is not infinite or zero. In other words, the circuit has some amount of resistance, which can affect the behavior of the circuit & MOSFET Primary Transconductance is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage.

How to calculate Output Resistance at Another Drain of Controlled Source Transistor?

The Output resistance at another drain of controlled source transistor formula is defined as simply the parallel combination of the Emitter (Source) resistor RL and the small-signal emitter (source) resistance of the transistor r_E is calculated using Drain Resistance = Resistance of Secondary Winding in Primary+2*Finite Resistance+2*Finite Resistance*MOSFET Primary Transconductance*Resistance of Secondary Winding in Primary. To calculate Output Resistance at Another Drain of Controlled Source Transistor, you need Resistance of Secondary Winding in Primary (R₂), Finite Resistance (R_fi) & MOSFET Primary Transconductance (g_mp). With our tool, you need to enter the respective value for Resistance of Secondary Winding in Primary, Finite Resistance & MOSFET Primary Transconductance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Resistance?

In this formula, Drain Resistance uses Resistance of Secondary Winding in Primary, Finite Resistance & MOSFET Primary Transconductance. We can use 3 other way(s) to calculate the same, which is/are as follows -

Drain Resistance = Finite Output Resistance+Source Resistance+(MOSFET Primary Transconductance*Finite Output Resistance*Source Resistance)
Drain Resistance = Finite Output Resistance+Source Resistance+(MOSFET Primary Transconductance*Finite Output Resistance*Source Resistance)
Drain Resistance = Finite Output Resistance+(MOSFET Primary Transconductance*Finite Output Resistance)*(1/Emitter Resistance+1/Small Signal Input Resistance)

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