Ohmic Region Drain Current of FET Calculator

✖Channel Conductance FET is the measure of how well the channel of an FET conducts current. It is determined by the mobility of the charge carriers in the channel.ⓘ Channel Conductance FET [G_o(fet)]			+10% -10%
✖Drain Source Voltage FET is the voltage between the drain and the source terminal of an FET.ⓘ Drain Source Voltage FET [V_ds(fet)]			+10% -10%
✖Surface Potential FET operates based on the surface potential of the semiconductor channel, controlling the flow of current through a gate voltage without generating inversion layers.ⓘ Surface Potential FET [Ψ_0(fet)]			+10% -10%
✖Pinch OFF Voltage is the voltage at which the channel of a field-effect transistor (FET) becomes so narrow that it effectively closes, preventing any further current flow.ⓘ Pinch OFF Voltage [V_off(fet)]			+10% -10%

✖Drain Current FET is the current that flow through the drain junction of FET.ⓘ Ohmic Region Drain Current of FET [I_d(fet)]

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Ohmic Region Drain Current of FET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current FET = Channel Conductance FET*(Drain Source Voltage FET+3/2*((Surface Potential FET+Drain Source Voltage FET-Drain Source Voltage FET)^(3/2)-(Surface Potential FET+Drain Source Voltage FET)^(3/2))/((Surface Potential FET+Pinch OFF Voltage)^(1/2)))
I_d(fet) = G_o(fet)*(V_ds(fet)+3/2*((Ψ_0(fet)+V_ds(fet)-V_ds(fet))^(3/2)-(Ψ_0(fet)+V_ds(fet))^(3/2))/((Ψ_0(fet)+V_off(fet))^(1/2)))
This formula uses 5 Variables

Variables Used

Drain Current FET - (Measured in Ampere) - Drain Current FET is the current that flow through the drain junction of FET.
Channel Conductance FET - (Measured in Siemens) - Channel Conductance FET is the measure of how well the channel of an FET conducts current. It is determined by the mobility of the charge carriers in the channel.
Drain Source Voltage FET - (Measured in Volt) - Drain Source Voltage FET is the voltage between the drain and the source terminal of an FET.
Surface Potential FET - (Measured in Volt) - Surface Potential FET operates based on the surface potential of the semiconductor channel, controlling the flow of current through a gate voltage without generating inversion layers.
Pinch OFF Voltage - (Measured in Volt) - Pinch OFF Voltage is the voltage at which the channel of a field-effect transistor (FET) becomes so narrow that it effectively closes, preventing any further current flow.

STEP 1: Convert Input(s) to Base Unit

Channel Conductance FET: 0.24 Millisiemens --> 0.00024 Siemens (Check conversion here)
Drain Source Voltage FET: 4.8 Volt --> 4.8 Volt No Conversion Required
Surface Potential FET: 4.976 Volt --> 4.976 Volt No Conversion Required
Pinch OFF Voltage: 63.56 Volt --> 63.56 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d(fet) = G_o(fet)*(V_ds(fet)+3/2*((Ψ_0(fet)+V_ds(fet)-V_ds(fet))^(3/2)-(Ψ_0(fet)+V_ds(fet))^(3/2))/((Ψ_0(fet)+V_off(fet))^(1/2))) --> 0.00024*(4.8+3/2*((4.976+4.8-4.8)^(3/2)-(4.976+4.8)^(3/2))/((4.976+63.56)^(1/2)))

Evaluating ... ...

I_d(fet) = 0.000305501451597179

STEP 3: Convert Result to Output's Unit

0.000305501451597179 Ampere -->0.305501451597179 Milliampere (Check conversion here)

FINAL ANSWER

0.305501451597179 ≈ 0.305501 Milliampere <-- Drain Current FET

(Calculation completed in 00.020 seconds)

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Created by Mohamed Fazil V

Acharya institute of technology (AIT), Bengaluru

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< FET Calculators

Transconductance of FET

LaTeX Go Forward Transconductance FET = (2*Zero Bias Drain Current)/Pinch OFF Voltage*(1-Drain Source Voltage FET/Pinch OFF Voltage)

Drain Source Voltage of FET

LaTeX Go Drain Source Voltage FET = Supply Voltage at Drain FET-Drain Current FET*(Drain Resistance FET+Source Resistance FET)

Drain Current of FET

LaTeX Go Drain Current FET = Zero Bias Drain Current*(1-Drain Source Voltage FET/Cutt-off Voltage FET)^2

Pinch off Voltage of FET

LaTeX Go Pinch OFF Voltage = Pinch OFF Drain Source Voltage FET-Drain Source Voltage FET

Ohmic Region Drain Current of FET Formula

LaTeX Go

What is Ohmic Region Drain Current of FET ?

The "Ohmic region" of a Field-Effect Transistor (FET) refers to a specific operating mode in which the FET behaves like a simple resistive element, and the drain current is directly proportional to the drain-source voltage. This region is also sometimes called the "linear region" or "triode region." In the Ohmic region, the FET is operating as a voltage-controlled resistor. The Ohmic region is often used in FET-based amplifier circuits, where the FET is biased in such a way that it exhibits linear characteristics, allowing for amplification of small input signals while avoiding distortion.

How to Calculate Ohmic Region Drain Current of FET?

Ohmic Region Drain Current of FET calculator uses Drain Current FET = Channel Conductance FET*(Drain Source Voltage FET+3/2*((Surface Potential FET+Drain Source Voltage FET-Drain Source Voltage FET)^(3/2)-(Surface Potential FET+Drain Source Voltage FET)^(3/2))/((Surface Potential FET+Pinch OFF Voltage)^(1/2))) to calculate the Drain Current FET, Ohmic Region Drain Current of FET is the drain current that flows when the drain-to-source voltage is small and the gate voltage is zero. In this region, the drain current is proportional to the drain-to-source voltage and the channel conductance of the FET. In a voltage amplifier, the ohmic region drain current of an FET is used to generate a voltage gain. The FET is biased in the ohmic region so that it behaves like a linear resistor. The input voltage is applied to the gate of the FET and the output voltage is taken from the drain of the FET. The voltage gain of the amplifier is determined by the channel conductance of the FET and the load resistance. Drain Current FET is denoted by I_d(fet) symbol.

How to calculate Ohmic Region Drain Current of FET using this online calculator? To use this online calculator for Ohmic Region Drain Current of FET, enter Channel Conductance FET (G_o(fet)), Drain Source Voltage FET (V_ds(fet)), Surface Potential FET (Ψ_0(fet)) & Pinch OFF Voltage (V_off(fet)) and hit the calculate button. Here is how the Ohmic Region Drain Current of FET calculation can be explained with given input values -> 95.4692 = 0.00024*(4.8+3/2*((4.976+4.8-4.8)^(3/2)-(4.976+4.8)^(3/2))/((4.976+63.56)^(1/2))).

FAQ

What is Ohmic Region Drain Current of FET?

Ohmic Region Drain Current of FET is the drain current that flows when the drain-to-source voltage is small and the gate voltage is zero. In this region, the drain current is proportional to the drain-to-source voltage and the channel conductance of the FET. In a voltage amplifier, the ohmic region drain current of an FET is used to generate a voltage gain. The FET is biased in the ohmic region so that it behaves like a linear resistor. The input voltage is applied to the gate of the FET and the output voltage is taken from the drain of the FET. The voltage gain of the amplifier is determined by the channel conductance of the FET and the load resistance and is represented as I_d(fet) = G_o(fet)*(V_ds(fet)+3/2*((Ψ_0(fet)+V_ds(fet)-V_ds(fet))^(3/2)-(Ψ_0(fet)+V_ds(fet))^(3/2))/((Ψ_0(fet)+V_off(fet))^(1/2))) or Drain Current FET = Channel Conductance FET*(Drain Source Voltage FET+3/2*((Surface Potential FET+Drain Source Voltage FET-Drain Source Voltage FET)^(3/2)-(Surface Potential FET+Drain Source Voltage FET)^(3/2))/((Surface Potential FET+Pinch OFF Voltage)^(1/2))). Channel Conductance FET is the measure of how well the channel of an FET conducts current. It is determined by the mobility of the charge carriers in the channel, Drain Source Voltage FET is the voltage between the drain and the source terminal of an FET, Surface Potential FET operates based on the surface potential of the semiconductor channel, controlling the flow of current through a gate voltage without generating inversion layers & Pinch OFF Voltage is the voltage at which the channel of a field-effect transistor (FET) becomes so narrow that it effectively closes, preventing any further current flow.

How to calculate Ohmic Region Drain Current of FET?

Ohmic Region Drain Current of FET is the drain current that flows when the drain-to-source voltage is small and the gate voltage is zero. In this region, the drain current is proportional to the drain-to-source voltage and the channel conductance of the FET. In a voltage amplifier, the ohmic region drain current of an FET is used to generate a voltage gain. The FET is biased in the ohmic region so that it behaves like a linear resistor. The input voltage is applied to the gate of the FET and the output voltage is taken from the drain of the FET. The voltage gain of the amplifier is determined by the channel conductance of the FET and the load resistance is calculated using Drain Current FET = Channel Conductance FET*(Drain Source Voltage FET+3/2*((Surface Potential FET+Drain Source Voltage FET-Drain Source Voltage FET)^(3/2)-(Surface Potential FET+Drain Source Voltage FET)^(3/2))/((Surface Potential FET+Pinch OFF Voltage)^(1/2))). To calculate Ohmic Region Drain Current of FET, you need Channel Conductance FET (G_o(fet)), Drain Source Voltage FET (V_ds(fet)), Surface Potential FET (Ψ_0(fet)) & Pinch OFF Voltage (V_off(fet)). With our tool, you need to enter the respective value for Channel Conductance FET, Drain Source Voltage FET, Surface Potential FET & Pinch OFF Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current FET?

In this formula, Drain Current FET uses Channel Conductance FET, Drain Source Voltage FET, Surface Potential FET & Pinch OFF Voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -

Drain Current FET = Zero Bias Drain Current*(1-Drain Source Voltage FET/Cutt-off Voltage FET)^2

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