MOSFET Transconductance using Process Transconductance Parameter Calculator

✖Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.ⓘ Transconductance [g_m]			+10% -10%
✖Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.ⓘ Aspect Ratio [WL]			+10% -10%
✖Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.ⓘ Gate-Source Voltage [V_gs]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_th]			+10% -10%

✖The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ MOSFET Transconductance using Process Transconductance Parameter [k'_n]

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MOSFET Transconductance using Process Transconductance Parameter Solution

STEP 0: Pre-Calculation Summary

Formula Used

Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage))
k'_n = g_m/(WL*(V_gs-V_th))
This formula uses 5 Variables

Variables Used

Process Transconductance Parameter - (Measured in Ampere per Square Volt) - The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Transconductance - (Measured in Siemens) - Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.
Aspect Ratio - Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
Gate-Source Voltage - (Measured in Volt) - Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

STEP 1: Convert Input(s) to Base Unit

Transconductance: 0.5 Millisiemens --> 0.0005 Siemens (Check conversion here)
Aspect Ratio: 0.1 --> No Conversion Required
Gate-Source Voltage: 4 Volt --> 4 Volt No Conversion Required
Threshold Voltage: 3.68 Volt --> 3.68 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

k'_n = g_m/(WL*(V_gs-V_th)) --> 0.0005/(0.1*(4-3.68))

Evaluating ... ...

k'_n = 0.015625

STEP 3: Convert Result to Output's Unit

0.015625 Ampere per Square Volt --> No Conversion Required

FINAL ANSWER

0.015625 Ampere per Square Volt <-- Process Transconductance Parameter

(Calculation completed in 00.004 seconds)

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< Transconductance Calculators

Transconductance given Process Transconductance Parameter

LaTeX Go Transconductance = Process Transconductance Parameter*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)

Transconductance given Drain Current

LaTeX Go Transconductance = sqrt(2*Process Transconductance Parameter*Aspect Ratio*Drain Current)

Transconductance using Process Transconductance Parameter and Overdrive Voltage

LaTeX Go Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage

Drain Current using Transconductance

LaTeX Go Drain Current = (Overdrive Voltage)*Transconductance/2

MOSFET Transconductance using Process Transconductance Parameter Formula

LaTeX Go

Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage))
k'_n = g_m/(WL*(V_gs-V_th))

What is the use of transconductance in MOSFET?

Transconductance is an expression of the performance of a bipolar transistor or field-effect transistor (FET). In general, the larger the transconductance figure for a device, the greater the gain(amplification) it is capable of delivering, when all other factors are held constant.

How to Calculate MOSFET Transconductance using Process Transconductance Parameter?

MOSFET Transconductance using Process Transconductance Parameter calculator uses Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)) to calculate the Process Transconductance Parameter, The MOSFET Transconductance using Process Transconductance Parameter is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage. Process Transconductance Parameter is denoted by k'_n symbol.

How to calculate MOSFET Transconductance using Process Transconductance Parameter using this online calculator? To use this online calculator for MOSFET Transconductance using Process Transconductance Parameter, enter Transconductance (g_m), Aspect Ratio (WL), Gate-Source Voltage (V_gs) & Threshold Voltage (V_th) and hit the calculate button. Here is how the MOSFET Transconductance using Process Transconductance Parameter calculation can be explained with given input values -> 0.015625 = 0.0005/(0.1*(4-3.68)).

FAQ

What is MOSFET Transconductance using Process Transconductance Parameter?

The MOSFET Transconductance using Process Transconductance Parameter is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage and is represented as k'_n = g_m/(WL*(V_gs-V_th)) or Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)). Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant, Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor, Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

How to calculate MOSFET Transconductance using Process Transconductance Parameter?

The MOSFET Transconductance using Process Transconductance Parameter is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage is calculated using Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)). To calculate MOSFET Transconductance using Process Transconductance Parameter, you need Transconductance (g_m), Aspect Ratio (WL), Gate-Source Voltage (V_gs) & Threshold Voltage (V_th). With our tool, you need to enter the respective value for Transconductance, Aspect Ratio, Gate-Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Process Transconductance Parameter?

In this formula, Process Transconductance Parameter uses Transconductance, Aspect Ratio, Gate-Source Voltage & Threshold Voltage. We can use 2 other way(s) to calculate the same, which is/are as follows -

Process Transconductance Parameter = Transconductance^2/(2*Aspect Ratio*Drain Current)
Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage)

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