MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage Calculator

✖Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.ⓘ Transconductance [g_m]			+10% -10%
✖Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.ⓘ Aspect Ratio [WL]			+10% -10%
✖Overdrive voltage is a term used in electronics and refers to the voltage level applied to a device or component that exceeds its normal operating voltage.ⓘ Overdrive Voltage [V_ov]			+10% -10%

✖The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage [k'_n]

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MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage Solution

STEP 0: Pre-Calculation Summary

Formula Used

Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage)
k'_n = g_m/(WL*V_ov)
This formula uses 4 Variables

Variables Used

Process Transconductance Parameter - (Measured in Ampere per Square Volt) - The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Transconductance - (Measured in Siemens) - Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.
Aspect Ratio - Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
Overdrive Voltage - (Measured in Volt) - Overdrive voltage is a term used in electronics and refers to the voltage level applied to a device or component that exceeds its normal operating voltage.

STEP 1: Convert Input(s) to Base Unit

Transconductance: 0.5 Millisiemens --> 0.0005 Siemens (Check conversion here)
Aspect Ratio: 0.1 --> No Conversion Required
Overdrive Voltage: 0.32 Volt --> 0.32 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

k'_n = g_m/(WL*V_ov) --> 0.0005/(0.1*0.32)

Evaluating ... ...

k'_n = 0.015625

STEP 3: Convert Result to Output's Unit

0.015625 Ampere per Square Volt --> No Conversion Required

FINAL ANSWER

0.015625 Ampere per Square Volt <-- Process Transconductance Parameter

(Calculation completed in 00.004 seconds)

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< Transconductance Calculators

Transconductance given Process Transconductance Parameter

LaTeX Go Transconductance = Process Transconductance Parameter*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)

Transconductance given Drain Current

LaTeX Go Transconductance = sqrt(2*Process Transconductance Parameter*Aspect Ratio*Drain Current)

Transconductance using Process Transconductance Parameter and Overdrive Voltage

LaTeX Go Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage

Drain Current using Transconductance

LaTeX Go Drain Current = (Overdrive Voltage)*Transconductance/2

MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage Formula

LaTeX Go

Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage)
k'_n = g_m/(WL*V_ov)

What is the use of transconductance in MOSFET?

Transconductance is an expression of the performance of a bipolar transistor or field-effect transistor (FET). In general, the larger the transconductance figure for a device, the greater the gain(amplification) it is capable of delivering, when all other factors are held constant.

How to Calculate MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage?

MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage calculator uses Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage) to calculate the Process Transconductance Parameter, MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage. Process Transconductance Parameter is denoted by k'_n symbol.

How to calculate MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage using this online calculator? To use this online calculator for MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage, enter Transconductance (g_m), Aspect Ratio (WL) & Overdrive Voltage (V_ov) and hit the calculate button. Here is how the MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage calculation can be explained with given input values -> 0.015625 = 0.0005/(0.1*0.32).

FAQ

What is MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage?

MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage and is represented as k'_n = g_m/(WL*V_ov) or Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage). Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant, Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor & Overdrive voltage is a term used in electronics and refers to the voltage level applied to a device or component that exceeds its normal operating voltage.

How to calculate MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage?

MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage is the change in the drain current divided by the small change in the gate/source voltage with a constant drain/source voltage is calculated using Process Transconductance Parameter = Transconductance/(Aspect Ratio*Overdrive Voltage). To calculate MOSFET Transconductance using Process Transconductance Parameter and Overdrive Voltage, you need Transconductance (g_m), Aspect Ratio (WL) & Overdrive Voltage (V_ov). With our tool, you need to enter the respective value for Transconductance, Aspect Ratio & Overdrive Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Process Transconductance Parameter?

In this formula, Process Transconductance Parameter uses Transconductance, Aspect Ratio & Overdrive Voltage. We can use 2 other way(s) to calculate the same, which is/are as follows -

Process Transconductance Parameter = Transconductance^2/(2*Aspect Ratio*Drain Current)
Process Transconductance Parameter = Transconductance/(Aspect Ratio*(Gate-Source Voltage-Threshold Voltage))

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