MOSFET Transconductance Parameter using Process Transconductance Solution

STEP 0: Pre-Calculation Summary
Formula Used
Transconductance Parameter = Process Transconductance Parameter*Aspect Ratio
kn = k'n*WL
This formula uses 3 Variables
Variables Used
Transconductance Parameter - (Measured in Ampere per Square Volt) - Transconductance parameter is a crucial parameter in electronic devices and circuits, which helps to describe and quantify the input-output relationship between voltage and current.
Process Transconductance Parameter - (Measured in Ampere per Square Volt) - The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Aspect Ratio - Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
STEP 1: Convert Input(s) to Base Unit
Process Transconductance Parameter: 0.015 Ampere per Square Volt --> 0.015 Ampere per Square Volt No Conversion Required
Aspect Ratio: 0.1 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
kn = k'n*WL --> 0.015*0.1
Evaluating ... ...
kn = 0.0015
STEP 3: Convert Result to Output's Unit
0.0015 Ampere per Square Volt --> No Conversion Required
FINAL ANSWER
0.0015 Ampere per Square Volt <-- Transconductance Parameter
(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri
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Transconductance Calculators

Transconductance given Process Transconductance Parameter
​ LaTeX ​ Go Transconductance = Process Transconductance Parameter*Aspect Ratio*(Gate-Source Voltage-Threshold Voltage)
Transconductance given Drain Current
​ LaTeX ​ Go Transconductance = sqrt(2*Process Transconductance Parameter*Aspect Ratio*Drain Current)
Transconductance using Process Transconductance Parameter and Overdrive Voltage
​ LaTeX ​ Go Transconductance = Process Transconductance Parameter*Aspect Ratio*Overdrive Voltage
Drain Current using Transconductance
​ LaTeX ​ Go Drain Current = (Overdrive Voltage)*Transconductance/2

MOSFET Transconductance Parameter using Process Transconductance Formula

​LaTeX ​Go
Transconductance Parameter = Process Transconductance Parameter*Aspect Ratio
kn = k'n*WL

What is a MOSFET used for?

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is widely used for switching purposes and for the amplification of electronic signals in electronic devices.

What are the types of MOSFETs?

There are two classes of MOSFETs. There is depletion mode and there is enhancement mode. Each class is available as n- or a p-channel, giving a total of four types of MOSFETs. Depletion mode comes in an N or a P and an enhancement mode comes in an N or a P.

How to Calculate MOSFET Transconductance Parameter using Process Transconductance?

MOSFET Transconductance Parameter using Process Transconductance calculator uses Transconductance Parameter = Process Transconductance Parameter*Aspect Ratio to calculate the Transconductance Parameter, The MOSFET transconductance parameter using Process transconductance is the product of the process transconductance parameter and the transistor aspect ratio (W/L). Transconductance Parameter is denoted by kn symbol.

How to calculate MOSFET Transconductance Parameter using Process Transconductance using this online calculator? To use this online calculator for MOSFET Transconductance Parameter using Process Transconductance, enter Process Transconductance Parameter (k'n) & Aspect Ratio (WL) and hit the calculate button. Here is how the MOSFET Transconductance Parameter using Process Transconductance calculation can be explained with given input values -> 0.0015 = 0.015*0.1.

FAQ

What is MOSFET Transconductance Parameter using Process Transconductance?
The MOSFET transconductance parameter using Process transconductance is the product of the process transconductance parameter and the transistor aspect ratio (W/L) and is represented as kn = k'n*WL or Transconductance Parameter = Process Transconductance Parameter*Aspect Ratio. The Process Transconductance Parameter (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor & Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.
How to calculate MOSFET Transconductance Parameter using Process Transconductance?
The MOSFET transconductance parameter using Process transconductance is the product of the process transconductance parameter and the transistor aspect ratio (W/L) is calculated using Transconductance Parameter = Process Transconductance Parameter*Aspect Ratio. To calculate MOSFET Transconductance Parameter using Process Transconductance, you need Process Transconductance Parameter (k'n) & Aspect Ratio (WL). With our tool, you need to enter the respective value for Process Transconductance Parameter & Aspect Ratio and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Transconductance Parameter?
In this formula, Transconductance Parameter uses Process Transconductance Parameter & Aspect Ratio. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Transconductance Parameter = Transconductance/Overdrive Voltage
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