Mobility in Mosfet Solution

STEP 0: Pre-Calculation Summary
Formula Used
Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer
μeff = Kp/Cox
This formula uses 3 Variables
Variables Used
Mobility in MOSFET - (Measured in Square Meter per Volt per Second) - Mobility in MOSFET is defined based on the ability of an electron to move quickly through a metal or semiconductor, when pulled by an electric field.
K Prime - (Measured in Square Meter per Volt per Second) - K Prime is the reverse rate constant of the reaction.
Capacitance of Gate Oxide Layer - (Measured in Farad per Square Meter) - Capacitance of Gate Oxide Layer is defined as the capacitance of the gate terminal of a field-effect transistor.
STEP 1: Convert Input(s) to Base Unit
K Prime: 4.502 Square Centimeter per Volt Second --> 0.0004502 Square Meter per Volt per Second (Check conversion ​here)
Capacitance of Gate Oxide Layer: 29.83 Microfarad per Square Millimeter --> 29.83 Farad per Square Meter (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
μeff = Kp/Cox --> 0.0004502/29.83
Evaluating ... ...
μeff = 1.50921890714046E-05
STEP 3: Convert Result to Output's Unit
1.50921890714046E-05 Square Meter per Volt per Second -->0.150921890714046 Square Centimeter per Volt Second (Check conversion ​here)
FINAL ANSWER
0.150921890714046 0.150922 Square Centimeter per Volt Second <-- Mobility in MOSFET
(Calculation completed in 00.020 seconds)

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Mobility in Mosfet Formula

​LaTeX ​Go
Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer
μeff = Kp/Cox

How does mobility affects the working of CMOS?

Mobility in CMOS refers to the movement of charge carriers (electrons and holes) in the transistor channels. It affects the transistor's current gain and inventory, hence the overall working of the CMOS circuit. Mobility determines the switching speed and the applicable gate voltage of a CMOS transistor.

How to Calculate Mobility in Mosfet?

Mobility in Mosfet calculator uses Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer to calculate the Mobility in MOSFET, The Mobility in Mosfet formula is defined as how quickly an electron can move through a metal or semiconductor, when pulled by an electric field. Mobility in MOSFET is denoted by μeff symbol.

How to calculate Mobility in Mosfet using this online calculator? To use this online calculator for Mobility in Mosfet, enter K Prime (Kp) & Capacitance of Gate Oxide Layer (Cox) and hit the calculate button. Here is how the Mobility in Mosfet calculation can be explained with given input values -> 1500.167 = 0.0004502/29.83.

FAQ

What is Mobility in Mosfet?
The Mobility in Mosfet formula is defined as how quickly an electron can move through a metal or semiconductor, when pulled by an electric field and is represented as μeff = Kp/Cox or Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer. K Prime is the reverse rate constant of the reaction & Capacitance of Gate Oxide Layer is defined as the capacitance of the gate terminal of a field-effect transistor.
How to calculate Mobility in Mosfet?
The Mobility in Mosfet formula is defined as how quickly an electron can move through a metal or semiconductor, when pulled by an electric field is calculated using Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer. To calculate Mobility in Mosfet, you need K Prime (Kp) & Capacitance of Gate Oxide Layer (Cox). With our tool, you need to enter the respective value for K Prime & Capacitance of Gate Oxide Layer and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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