Majority Carrier Concentration in Semiconductor for p-type Solution

STEP 0: Pre-Calculation Summary
Formula Used
Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration
n0 = ni^2/p0
This formula uses 3 Variables
Variables Used
Majority Carrier Concentration - (Measured in 1 per Cubic Meter) - Majority Carrier Concentration is the number of carriers in the conduction band with no externally applied bias.
Intrinsic Carrier Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Carrier Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
Minority Carrier Concentration - (Measured in 1 per Cubic Meter) - Minority Carrier Concentration is the number of carriers in the valence band with no externally applied bias.
STEP 1: Convert Input(s) to Base Unit
Intrinsic Carrier Concentration: 120000000 1 per Cubic Meter --> 120000000 1 per Cubic Meter No Conversion Required
Minority Carrier Concentration: 91000000 1 per Cubic Meter --> 91000000 1 per Cubic Meter No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
n0 = ni^2/p0 --> 120000000^2/91000000
Evaluating ... ...
n0 = 158241758.241758
STEP 3: Convert Result to Output's Unit
158241758.241758 1 per Cubic Meter --> No Conversion Required
FINAL ANSWER
158241758.241758 1.6E+8 1 per Cubic Meter <-- Majority Carrier Concentration
(Calculation completed in 00.004 seconds)

Credits

Creator Image
Created by Akshada Kulkarni
National Institute of Information Technology (NIIT), Neemrana
Akshada Kulkarni has created this Calculator and 500+ more calculators!
Verifier Image
Verified by Team Softusvista
Softusvista Office (Pune), India
Team Softusvista has verified this Calculator and 1100+ more calculators!

Semiconductor Characteristics Calculators

Conductivity in Semiconductors
​ LaTeX ​ Go Conductivity = (Electron Density*[Charge-e]*Mobility of Electron)+(Holes Density*[Charge-e]*Mobility of Holes)
Electron Diffusion Length
​ LaTeX ​ Go Electron Diffusion Length = sqrt(Electron Diffusion Constant*Minority Carrier Lifetime)
Fermi Level of Intrinsic Semiconductors
​ LaTeX ​ Go Fermi Level Intrinsic Semiconductor = (Conduction Band Energy+Valance Band Energy)/2
Mobility of Charge Carriers
​ LaTeX ​ Go Charge Carriers Mobility = Drift Speed/Electric Field Intensity

Majority Carrier Concentration in Semiconductor for p-type Formula

​LaTeX ​Go
Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration
n0 = ni^2/p0

How is majority carrier concentration affected by donor impurity concentration?

the thermal-equilibrium majority carrier electron concentration is essentially equal to the donor impurity concentration. The thermal-equilibrium majority and minority carrier concentrations can differ by many orders of magnitude.
If the donor impurity concentration is not too different in magnitude from the intrinsic carrier concentration, the thermal-equilibrium majority carrier electron concentration is influenced by the intrinsic concentration.

How to Calculate Majority Carrier Concentration in Semiconductor for p-type?

Majority Carrier Concentration in Semiconductor for p-type calculator uses Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration to calculate the Majority Carrier Concentration, Majority carrier concentration in Semiconductor for p-type is the thermal equilibrium concentration of the holes in the conduction band. Majority Carrier Concentration is denoted by n0 symbol.

How to calculate Majority Carrier Concentration in Semiconductor for p-type using this online calculator? To use this online calculator for Majority Carrier Concentration in Semiconductor for p-type, enter Intrinsic Carrier Concentration (ni) & Minority Carrier Concentration (p0) and hit the calculate button. Here is how the Majority Carrier Concentration in Semiconductor for p-type calculation can be explained with given input values -> 109.8901 = 120000000^2/91000000.

FAQ

What is Majority Carrier Concentration in Semiconductor for p-type?
Majority carrier concentration in Semiconductor for p-type is the thermal equilibrium concentration of the holes in the conduction band and is represented as n0 = ni^2/p0 or Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration. Intrinsic Carrier Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material & Minority Carrier Concentration is the number of carriers in the valence band with no externally applied bias.
How to calculate Majority Carrier Concentration in Semiconductor for p-type?
Majority carrier concentration in Semiconductor for p-type is the thermal equilibrium concentration of the holes in the conduction band is calculated using Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration. To calculate Majority Carrier Concentration in Semiconductor for p-type, you need Intrinsic Carrier Concentration (ni) & Minority Carrier Concentration (p0). With our tool, you need to enter the respective value for Intrinsic Carrier Concentration & Minority Carrier Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Majority Carrier Concentration?
In this formula, Majority Carrier Concentration uses Intrinsic Carrier Concentration & Minority Carrier Concentration. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Majority Carrier Concentration = Intrinsic Carrier Concentration^2/Minority Carrier Concentration
Let Others Know
Facebook
Twitter
Reddit
LinkedIn
Email
WhatsApp
Copied!