✖PMOS gate drain capacitance is the capacitance between the gate and drain terminals of a PMOS transistor, impacting its switching speed and power consumption in digital circuit applications.ⓘ PMOS Gate Drain Capacitance [C_gd,p]			+10% -10%
✖NMOS gate drain capacitance is the capacitance between the gate and drain terminals of an NMOS transistor, influencing its switching speed and power consumption in digital circuit applications.ⓘ NMOS Gate Drain Capacitance [C_gd,n]			+10% -10%
✖PMOS drain bulk capacitance refers to the capacitance between the drain terminal and the substrate of a PMOS transistor, influencing its behavior in various circuit applications.ⓘ PMOS Drain Bulk Capacitance [C_db,p]			+10% -10%
✖NMOS drain bulk capacitance refers to the capacitance between the drain terminal and the bulk (substrate) of an NMOS transistor, impacting its switching characteristics and overall performance.ⓘ NMOS Drain Bulk Capacitance [C_db,n]			+10% -10%
✖Inverter CMOS Internal Capacitance refers to the parasitic capacitances within a CMOS inverter, including junction and overlap capacitances, affecting its switching speed and power consumption.ⓘ Inverter CMOS Internal Capacitance [C_in]			+10% -10%
✖Inverter CMOS Gate Capacitance is the total capacitance at the gate terminal of a CMOS inverter, impacting switching speed and power consumption, consisting of gate-to-source.ⓘ Inverter CMOS Gate Capacitance [C_g]			+10% -10%

✖Inverter CMOS Load Capacitance is the capacitance driven by a CMOS inverter's output, including wiring, input capacitances of connected gates, and parasitic capacitances.ⓘ Load Capacitance of Cascaded Inverter CMOS [C_load]

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Formula

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Load Capacitance of Cascaded Inverter CMOS

Formula

`"C"_{"load"} = "C"_{"gd,p"}+"C"_{"gd,n"}+"C"_{"db,p"}+"C"_{"db,n"}+"C"_{"in"}+"C"_{"g"}`

Example

`"0.93fF"="0.15fF"+"0.1fF"+"0.25fF"+"0.2fF"+"0.05fF"+"0.18fF"`

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Load Capacitance of Cascaded Inverter CMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Inverter CMOS Load Capacitance = PMOS Gate Drain Capacitance+NMOS Gate Drain Capacitance+PMOS Drain Bulk Capacitance+NMOS Drain Bulk Capacitance+Inverter CMOS Internal Capacitance+Inverter CMOS Gate Capacitance
C_load = C_gd,p+C_gd,n+C_db,p+C_db,n+C_in+C_g
This formula uses 7 Variables

Variables Used

Inverter CMOS Load Capacitance - (Measured in Farad) - Inverter CMOS Load Capacitance is the capacitance driven by a CMOS inverter's output, including wiring, input capacitances of connected gates, and parasitic capacitances.
PMOS Gate Drain Capacitance - (Measured in Farad) - PMOS gate drain capacitance is the capacitance between the gate and drain terminals of a PMOS transistor, impacting its switching speed and power consumption in digital circuit applications.
NMOS Gate Drain Capacitance - (Measured in Farad) - NMOS gate drain capacitance is the capacitance between the gate and drain terminals of an NMOS transistor, influencing its switching speed and power consumption in digital circuit applications.
PMOS Drain Bulk Capacitance - (Measured in Farad) - PMOS drain bulk capacitance refers to the capacitance between the drain terminal and the substrate of a PMOS transistor, influencing its behavior in various circuit applications.
NMOS Drain Bulk Capacitance - (Measured in Farad) - NMOS drain bulk capacitance refers to the capacitance between the drain terminal and the bulk (substrate) of an NMOS transistor, impacting its switching characteristics and overall performance.
Inverter CMOS Internal Capacitance - (Measured in Farad) - Inverter CMOS Internal Capacitance refers to the parasitic capacitances within a CMOS inverter, including junction and overlap capacitances, affecting its switching speed and power consumption.
Inverter CMOS Gate Capacitance - (Measured in Farad) - Inverter CMOS Gate Capacitance is the total capacitance at the gate terminal of a CMOS inverter, impacting switching speed and power consumption, consisting of gate-to-source.

STEP 1: Convert Input(s) to Base Unit

PMOS Gate Drain Capacitance: 0.15 Femtofarad --> 1.5E-16 Farad (Check conversion here)
NMOS Gate Drain Capacitance: 0.1 Femtofarad --> 1E-16 Farad (Check conversion here)
PMOS Drain Bulk Capacitance: 0.25 Femtofarad --> 2.5E-16 Farad (Check conversion here)
NMOS Drain Bulk Capacitance: 0.2 Femtofarad --> 2E-16 Farad (Check conversion here)
Inverter CMOS Internal Capacitance: 0.05 Femtofarad --> 5E-17 Farad (Check conversion here)
Inverter CMOS Gate Capacitance: 0.18 Femtofarad --> 1.8E-16 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_load = C_gd,p+C_gd,n+C_db,p+C_db,n+C_in+C_g --> 1.5E-16+1E-16+2.5E-16+2E-16+5E-17+1.8E-16

Evaluating ... ...

C_load = 9.3E-16

STEP 3: Convert Result to Output's Unit

9.3E-16 Farad -->0.93 Femtofarad (Check conversion here)

FINAL ANSWER

0.93 Femtofarad <-- Inverter CMOS Load Capacitance

(Calculation completed in 00.004 seconds)

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< 16 CMOS Inverters Calculators

Propagation Delay for Low to High Output Transition CMOS

Go Time for Low to High Transition of Output = (Inverter CMOS Load Capacitance/(Transconductance of PMOS*(Supply Voltage-abs(Threshold Voltage of PMOS with Body Bias))))*(((2*abs(Threshold Voltage of PMOS with Body Bias))/(Supply Voltage-abs(Threshold Voltage of PMOS with Body Bias)))+ln((4*(Supply Voltage-abs(Threshold Voltage of PMOS with Body Bias))/Supply Voltage)-1))

Propagation Delay for High to Low Output Transition CMOS

Go Time for High to Low Transition of Output = (Inverter CMOS Load Capacitance/(Transconductance of NMOS*(Supply Voltage-Threshold Voltage of NMOS with Body Bias)))*((2*Threshold Voltage of NMOS with Body Bias/(Supply Voltage-Threshold Voltage of NMOS with Body Bias))+ln((4*(Supply Voltage-Threshold Voltage of NMOS with Body Bias)/Supply Voltage)-1))

Resistive Load Minimum Output Voltage CMOS

Go Resistive Load Minimum Output Voltage = Supply Voltage-Zero Bias Threshold Voltage+(1/(Transconductance of NMOS*Load Resistance))-sqrt((Supply Voltage-Zero Bias Threshold Voltage+(1/(Transconductance of NMOS*Load Resistance)))^2-(2*Supply Voltage/(Transconductance of NMOS*Load Resistance)))

Threshold Voltage CMOS

Go Threshold Voltage = (Threshold Voltage of NMOS Without Body Bias+sqrt(1/Transconductance Ratio)*(Supply Voltage+(Threshold Voltage of PMOS Without Body Bias)))/(1+sqrt(1/Transconductance Ratio))

Maximum Input Voltage CMOS

Go Maximum Input Voltage CMOS = (2*Output Voltage for Max Input+(Threshold Voltage of PMOS Without Body Bias)-Supply Voltage+Transconductance Ratio*Threshold Voltage of NMOS Without Body Bias)/(1+Transconductance Ratio)

Resistive Load Minimum Input Voltage CMOS

Go Resistive Load Minimum Input Voltage = Zero Bias Threshold Voltage+sqrt((8*Supply Voltage)/(3*Transconductance of NMOS*Load Resistance))-(1/(Transconductance of NMOS*Load Resistance))

Load Capacitance of Cascaded Inverter CMOS

Go Inverter CMOS Load Capacitance = PMOS Gate Drain Capacitance+NMOS Gate Drain Capacitance+PMOS Drain Bulk Capacitance+NMOS Drain Bulk Capacitance+Inverter CMOS Internal Capacitance+Inverter CMOS Gate Capacitance

Minimum Input Voltage CMOS

Go Minimum Input Voltage = (Supply Voltage+(Threshold Voltage of PMOS Without Body Bias)+Transconductance Ratio*(2*Output Voltage+Threshold Voltage of NMOS Without Body Bias))/(1+Transconductance Ratio)

Resistive Load Maximum Input Voltage CMOS

Go Resistive Load Maximum Input Voltage CMOS = Zero Bias Threshold Voltage+(1/(Transconductance of NMOS*Load Resistance))

Average Power Dissipation CMOS

Go Average Power Dissipation = Inverter CMOS Load Capacitance*(Supply Voltage)^2*Frequency

Average Propagation Delay CMOS

Go Average Propagation Delay = (Time for High to Low Transition of Output+Time for Low to High Transition of Output)/2

Maximum Input Voltage for Symmetric CMOS

Go Maximum Input Voltage Symmetric CMOS = (3*Supply Voltage+2*Threshold Voltage of NMOS Without Body Bias)/8

Minimum Input Voltage for Symmetric CMOS

Go Minimum Input Voltage Symmetric CMOS = (5*Supply Voltage-2*Threshold Voltage of NMOS Without Body Bias)/8

Oscillation Period Ring Oscillator CMOS

Go Oscillation Period = 2*Number of Stages Ring Oscillator*Average Propagation Delay

Noise Margin for High Signal CMOS

Go Noise Margin for High Signal = Maximum Output Voltage-Minimum Input Voltage

Transconductance Ratio CMOS

Go Transconductance Ratio = Transconductance of NMOS/Transconductance of PMOS

Load Capacitance of Cascaded Inverter CMOS Formula

Why Csb,p and Csb,n is not considered in this formula?

C_sb,p and C_sb,n have no effect on the transient behavior of the circuit since the source-to-substrate voltages of both transistors are always equal to zero.

How to Calculate Load Capacitance of Cascaded Inverter CMOS?

Load Capacitance of Cascaded Inverter CMOS calculator uses Inverter CMOS Load Capacitance = PMOS Gate Drain Capacitance+NMOS Gate Drain Capacitance+PMOS Drain Bulk Capacitance+NMOS Drain Bulk Capacitance+Inverter CMOS Internal Capacitance+Inverter CMOS Gate Capacitance to calculate the Inverter CMOS Load Capacitance, Load Capacitance of Cascaded Inverter CMOS refers to the total capacitance at the output of multiple interconnected CMOS inverters, including the sum of parasitic and intentional capacitances, influencing the circuit's switching speed, power consumption, and overall performance. Inverter CMOS Load Capacitance is denoted by C_load symbol.

How to calculate Load Capacitance of Cascaded Inverter CMOS using this online calculator? To use this online calculator for Load Capacitance of Cascaded Inverter CMOS, enter PMOS Gate Drain Capacitance (C_gd,p), NMOS Gate Drain Capacitance (C_gd,n), PMOS Drain Bulk Capacitance (C_db,p), NMOS Drain Bulk Capacitance (C_db,n), Inverter CMOS Internal Capacitance (C_in) & Inverter CMOS Gate Capacitance (C_g) and hit the calculate button. Here is how the Load Capacitance of Cascaded Inverter CMOS calculation can be explained with given input values -> 9.3E+14 = 1.5E-16+1E-16+2.5E-16+2E-16+5E-17+1.8E-16.

FAQ

What is Load Capacitance of Cascaded Inverter CMOS?

Load Capacitance of Cascaded Inverter CMOS refers to the total capacitance at the output of multiple interconnected CMOS inverters, including the sum of parasitic and intentional capacitances, influencing the circuit's switching speed, power consumption, and overall performance and is represented as C_load = C_gd,p+C_gd,n+C_db,p+C_db,n+C_in+C_g or Inverter CMOS Load Capacitance = PMOS Gate Drain Capacitance+NMOS Gate Drain Capacitance+PMOS Drain Bulk Capacitance+NMOS Drain Bulk Capacitance+Inverter CMOS Internal Capacitance+Inverter CMOS Gate Capacitance. PMOS gate drain capacitance is the capacitance between the gate and drain terminals of a PMOS transistor, impacting its switching speed and power consumption in digital circuit applications, NMOS gate drain capacitance is the capacitance between the gate and drain terminals of an NMOS transistor, influencing its switching speed and power consumption in digital circuit applications, PMOS drain bulk capacitance refers to the capacitance between the drain terminal and the substrate of a PMOS transistor, influencing its behavior in various circuit applications, NMOS drain bulk capacitance refers to the capacitance between the drain terminal and the bulk (substrate) of an NMOS transistor, impacting its switching characteristics and overall performance, Inverter CMOS Internal Capacitance refers to the parasitic capacitances within a CMOS inverter, including junction and overlap capacitances, affecting its switching speed and power consumption & Inverter CMOS Gate Capacitance is the total capacitance at the gate terminal of a CMOS inverter, impacting switching speed and power consumption, consisting of gate-to-source.

How to calculate Load Capacitance of Cascaded Inverter CMOS?

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