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Junction Transition Width Calculator

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SSD Junction Electrons and Holes Energy Band and Charge Carrier Semiconductor Carriers

✖Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material.ⓘ Charge Penetration N-type [x_no]			+10% -10%
✖Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region.ⓘ Acceptor Concentration [N_a]			+10% -10%
✖Donor concentration refers to the concentration or density of donor atoms in a semiconductor material.ⓘ Donor Concentration [N_d]			+10% -10%

✖Junction Transition width is defined as the spatial region over which a the width of junction changes from one value to another.ⓘ Junction Transition Width [W_j]

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Junction Transition Width Solution

STEP 0: Pre-Calculation Summary

Formula Used

Junction Transition Width = Charge Penetration N-type*((Acceptor Concentration+Donor Concentration)/Acceptor Concentration)
W_j = x_no*((N_a+N_d)/N_a)
This formula uses 4 Variables

Variables Used

Junction Transition Width - (Measured in Meter) - Junction Transition width is defined as the spatial region over which a the width of junction changes from one value to another.
Charge Penetration N-type - (Measured in Meter) - Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region.
Donor Concentration - (Measured in 1 per Cubic Meter) - Donor concentration refers to the concentration or density of donor atoms in a semiconductor material.

STEP 1: Convert Input(s) to Base Unit

Charge Penetration N-type: 0.019 Micrometer --> 1.9E-08 Meter (Check conversion here)
Acceptor Concentration: 7.9E+35 1 per Cubic Meter --> 7.9E+35 1 per Cubic Meter No Conversion Required
Donor Concentration: 2.5E+35 1 per Cubic Meter --> 2.5E+35 1 per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

W_j = x_no*((N_a+N_d)/N_a) --> 1.9E-08*((7.9E+35+2.5E+35)/7.9E+35)

Evaluating ... ...

W_j = 2.50126582278481E-08

STEP 3: Convert Result to Output's Unit

2.50126582278481E-08 Meter -->0.0250126582278481 Micrometer (Check conversion here)

FINAL ANSWER

0.0250126582278481 ≈ 0.025013 Micrometer <-- Junction Transition Width

(Calculation completed in 00.004 seconds)

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< SSD Junction Calculators

Junction Capacitance

LaTeX Go Junction Capacitance = (Junction Area/2)*sqrt((2*[Charge-e]*Constant Length Offset*Doping Concentration of Base)/(Source Voltage-Source Voltage 1))

Series Resistance in P-type

LaTeX Go Series Resistance in P Junction = ((Source Voltage-Junction Voltage)/Electric Current)-Series Resistance in N Junction

Junction Voltage

LaTeX Go Junction Voltage = Source Voltage-(Series Resistance in P Junction+Series Resistance in N Junction)*Electric Current

N-Type Width

LaTeX Go Charge Penetration N-type = Total Acceptor Charge/(Junction Area*Acceptor Concentration*[Charge-e])

Junction Transition Width Formula

LaTeX Go

Junction Transition Width = Charge Penetration N-type*((Acceptor Concentration+Donor Concentration)/Acceptor Concentration)
W_j = x_no*((N_a+N_d)/N_a)

What is Diffusion and Drift currents?

Drift current depends on the electric field applied, if there is no electric field there is no drift current. Diffusion current occurs even though there is not an electric field applied to the semiconductor.

How to Calculate Junction Transition Width?

Junction Transition Width calculator uses Junction Transition Width = Charge Penetration N-type*((Acceptor Concentration+Donor Concentration)/Acceptor Concentration) to calculate the Junction Transition Width, The Junction Transition Width formula refers to the spatial region over which the width of a junction changes from one value to another. Junction Transition Width is denoted by W_j symbol.

How to calculate Junction Transition Width using this online calculator? To use this online calculator for Junction Transition Width, enter Charge Penetration N-type (x_no), Acceptor Concentration (N_a) & Donor Concentration (N_d) and hit the calculate button. Here is how the Junction Transition Width calculation can be explained with given input values -> 25012.66 = 1.9E-08*((7.9E+35+2.5E+35)/7.9E+35).

FAQ

What is Junction Transition Width?

The Junction Transition Width formula refers to the spatial region over which the width of a junction changes from one value to another and is represented as W_j = x_no*((N_a+N_d)/N_a) or Junction Transition Width = Charge Penetration N-type*((Acceptor Concentration+Donor Concentration)/Acceptor Concentration). Charge Penetration N-type refers to the phenomenon where additional electrons from dopant atoms, typically phosphorus or arsenic, penetrate the crystal lattice of the semiconductor material, Acceptor concentration is the concentration an acceptor or dopant atom that when substituted into a semiconductor lattice forms a p-type region & Donor concentration refers to the concentration or density of donor atoms in a semiconductor material.

How to calculate Junction Transition Width?

The Junction Transition Width formula refers to the spatial region over which the width of a junction changes from one value to another is calculated using Junction Transition Width = Charge Penetration N-type*((Acceptor Concentration+Donor Concentration)/Acceptor Concentration). To calculate Junction Transition Width, you need Charge Penetration N-type (x_no), Acceptor Concentration (N_a) & Donor Concentration (N_d). With our tool, you need to enter the respective value for Charge Penetration N-type, Acceptor Concentration & Donor Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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