HCF of three numbers

Junction Built-in Voltage VLSI Calculator

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✖Temperature reflects how hot or cold an object or environment is.ⓘ Temperature [T]			+10% -10%
✖Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.ⓘ Acceptor Concentration [N_A]			+10% -10%
✖Donor concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons.ⓘ Donor concentration [N_D]			+10% -10%
✖Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.ⓘ Intrinsic Concentration [N_i]			+10% -10%

✖Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied.ⓘ Junction Built-in Voltage VLSI [Ø₀]

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Junction Built-in Voltage VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)
Ø₀ = ([BoltZ]*T/[Charge-e])*ln(N_A*N_D/(N_i)^2)
This formula uses 2 Constants, 1 Functions, 5 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23

Functions Used

ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)

Variables Used

Junction Built-in Voltage - (Measured in Volt) - Junction Built-in Voltage is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied.
Temperature - (Measured in Kelvin) - Temperature reflects how hot or cold an object or environment is.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.
Donor concentration - (Measured in 1 per Cubic Meter) - Donor concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons.
Intrinsic Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.

STEP 1: Convert Input(s) to Base Unit

Temperature: 300 Kelvin --> 300 Kelvin No Conversion Required
Acceptor Concentration: 1E+16 1 per Cubic Centimeter --> 1E+22 1 per Cubic Meter (Check conversion here)
Donor concentration: 1E+17 1 per Cubic Centimeter --> 1E+23 1 per Cubic Meter (Check conversion here)
Intrinsic Concentration: 14500000000 1 per Cubic Centimeter --> 1.45E+16 1 per Cubic Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Ø₀ = ([BoltZ]*T/[Charge-e])*ln(N_A*N_D/(N_i)^2) --> ([BoltZ]*300/[Charge-e])*ln(1E+22*1E+23/(1.45E+16)^2)

Evaluating ... ...

Ø₀ = 0.75463200359389

STEP 3: Convert Result to Output's Unit

0.75463200359389 Volt --> No Conversion Required

FINAL ANSWER

0.75463200359389 ≈ 0.754632 Volt <-- Junction Built-in Voltage

(Calculation completed in 00.020 seconds)

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Created by Priyanka Patel

Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad

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Dayananda Sagar College Of Engineering (DSCE), Banglore

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< VLSI Material Optimization Calculators

Body Effect Coefficient

LaTeX Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

DIBL Coefficient

LaTeX Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Channel Charge

LaTeX Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Critical Voltage

LaTeX Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Junction Built-in Voltage VLSI Formula

LaTeX Go

Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)
Ø₀ = ([BoltZ]*T/[Charge-e])*ln(N_A*N_D/(N_i)^2)

How is the Junction Built-In Voltage created in a semiconductor device used in VLSI?

The Junction Built-In Voltage is created by the diffusion of charge carriers across a semiconductor junction, such as a p-n junction, resulting in a potential difference due to the difference in concentration of carriers on either side of the junction. This voltage is established at thermal equilibrium.

How to Calculate Junction Built-in Voltage VLSI?

Junction Built-in Voltage VLSI calculator uses Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2) to calculate the Junction Built-in Voltage, The Junction Built-in Voltage VLSI formula is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied. Junction Built-in Voltage is denoted by Ø₀ symbol.

How to calculate Junction Built-in Voltage VLSI using this online calculator? To use this online calculator for Junction Built-in Voltage VLSI, enter Temperature (T), Acceptor Concentration (N_A), Donor concentration (N_D) & Intrinsic Concentration (N_i) and hit the calculate button. Here is how the Junction Built-in Voltage VLSI calculation can be explained with given input values -> 0.754632 = ([BoltZ]*300/[Charge-e])*ln(1E+22*1E+23/(1.45E+16)^2).

FAQ

What is Junction Built-in Voltage VLSI?

The Junction Built-in Voltage VLSI formula is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied and is represented as Ø₀ = ([BoltZ]*T/[Charge-e])*ln(N_A*N_D/(N_i)^2) or Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2). Temperature reflects how hot or cold an object or environment is, Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material, Donor concentration refers to the concentration of donor dopant atoms introduced into a semiconductor material to increase the number of free electrons & Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.

How to calculate Junction Built-in Voltage VLSI?

The Junction Built-in Voltage VLSI formula is defined as the voltage that exists across a semiconductor junction in thermal equilibrium, where no external voltage is applied is calculated using Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2). To calculate Junction Built-in Voltage VLSI, you need Temperature (T), Acceptor Concentration (N_A), Donor concentration (N_D) & Intrinsic Concentration (N_i). With our tool, you need to enter the respective value for Temperature, Acceptor Concentration, Donor concentration & Intrinsic Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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