✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.ⓘ Voltage between Gate and Source [V_GS]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_T]			+10% -10%

✖Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.ⓘ Inversion Layer Charge in PMOS [Q_p]

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Formula

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Inversion Layer Charge in PMOS

Formula

`"Q"_{"p"} = -"C"_{"ox"}*("V"_{"GS"}-"V"_{"T"})`

Example

`"-0.001728C/m²"=-"0.0008F"*("2.86V"-"0.7V")`

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Inversion Layer Charge in PMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)
Q_p = -C_ox*(V_GS-V_T)
This formula uses 4 Variables

Variables Used

Inversion Layer Charge - (Measured in Coulomb per Square Meter) - Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Voltage between Gate and Source - (Measured in Volt) - The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

STEP 1: Convert Input(s) to Base Unit

Oxide Capacitance: 0.0008 Farad --> 0.0008 Farad No Conversion Required
Voltage between Gate and Source: 2.86 Volt --> 2.86 Volt No Conversion Required
Threshold Voltage: 0.7 Volt --> 0.7 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Q_p = -C_ox*(V_GS-V_T) --> -0.0008*(2.86-0.7)

Evaluating ... ...

Q_p = -0.001728

STEP 3: Convert Result to Output's Unit

-0.001728 Coulomb per Square Meter --> No Conversion Required

FINAL ANSWER

-0.001728 Coulomb per Square Meter <-- Inversion Layer Charge

(Calculation completed in 00.004 seconds)

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< 15 P-Channel Enhancement Calculators

Overall Drain Current of PMOS Transistor

Go Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))

Drain Current in Triode Region of PMOS Transistor

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Body Effect in PMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Drain Current in Triode Region of PMOS Transistor given Vsd

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Backgate Effect Parameter in PMOS

Go Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance

Drain Current from Source to Drain

Go Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)

Inversion Layer Charge at Pinch-Off Condition in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)

Drain Current in Saturation Region of PMOS Transistor given Vov

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Inversion Layer Charge in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)

Current in Inversion Channel of PMOS

Go Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

Current in Inversion Channel of PMOS given Mobility

Go Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel

Overdrive Voltage of PMOS

Go Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)

Process Transconductance Parameter of PMOS

Go Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance

Transit Time of PNP Transistor

Go Transit Time = Base Width^2/(2*Diffusion Constant For PNP)

Inversion Layer Charge in PMOS Formula

Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)
Q_p = -C_ox*(V_GS-V_T)

What is the reason of inversion layer?

The inversion created from a cold front is especially evident when a shallow layer of polar air moves into lower latitudes. The air associated with the shallow air mass is colder than the air aloft, thus creating an inversion. Inversions promote stability within the vertical layer of the troposphere they exist.

How to Calculate Inversion Layer Charge in PMOS?

Inversion Layer Charge in PMOS calculator uses Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage) to calculate the Inversion Layer Charge, The Inversion Layer Charge in PMOS formula is defined as Inversion layer charge in a p-channel metal-oxide-semiconductor field-effect transistor (PMOS) refers to the accumulation of negatively charged carriers (electrons) at the interface between the p-type semiconductor substrate and the insulating layer (oxide) when a voltage is applied to the gate terminal. Inversion Layer Charge is denoted by Q_p symbol.

How to calculate Inversion Layer Charge in PMOS using this online calculator? To use this online calculator for Inversion Layer Charge in PMOS, enter Oxide Capacitance (C_ox), Voltage between Gate and Source (V_GS) & Threshold Voltage (V_T) and hit the calculate button. Here is how the Inversion Layer Charge in PMOS calculation can be explained with given input values -> -0.001728 = -0.0008*(2.86-0.7).

FAQ

What is Inversion Layer Charge in PMOS?

The Inversion Layer Charge in PMOS formula is defined as Inversion layer charge in a p-channel metal-oxide-semiconductor field-effect transistor (PMOS) refers to the accumulation of negatively charged carriers (electrons) at the interface between the p-type semiconductor substrate and the insulating layer (oxide) when a voltage is applied to the gate terminal and is represented as Q_p = -C_ox*(V_GS-V_T) or Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage). Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits, The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

How to calculate Inversion Layer Charge in PMOS?

The Inversion Layer Charge in PMOS formula is defined as Inversion layer charge in a p-channel metal-oxide-semiconductor field-effect transistor (PMOS) refers to the accumulation of negatively charged carriers (electrons) at the interface between the p-type semiconductor substrate and the insulating layer (oxide) when a voltage is applied to the gate terminal is calculated using Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage). To calculate Inversion Layer Charge in PMOS, you need Oxide Capacitance (C_ox), Voltage between Gate and Source (V_GS) & Threshold Voltage (V_T). With our tool, you need to enter the respective value for Oxide Capacitance, Voltage between Gate and Source & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Inversion Layer Charge?

In this formula, Inversion Layer Charge uses Oxide Capacitance, Voltage between Gate and Source & Threshold Voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -

Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)

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