Inversion Layer Charge in PMOS Calculator

✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.ⓘ Voltage between Gate and Source [V_GS]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_T]			+10% -10%

✖Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.ⓘ Inversion Layer Charge in PMOS [Q_p]

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Inversion Layer Charge in PMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)
Q_p = -C_ox*(V_GS-V_T)
This formula uses 4 Variables

Variables Used

Inversion Layer Charge - (Measured in Coulomb per Square Meter) - Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Voltage between Gate and Source - (Measured in Volt) - The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

STEP 1: Convert Input(s) to Base Unit

Oxide Capacitance: 0.0008 Farad --> 0.0008 Farad No Conversion Required
Voltage between Gate and Source: 2.86 Volt --> 2.86 Volt No Conversion Required
Threshold Voltage: 0.7 Volt --> 0.7 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Q_p = -C_ox*(V_GS-V_T) --> -0.0008*(2.86-0.7)

Evaluating ... ...

Q_p = -0.001728

STEP 3: Convert Result to Output's Unit

-0.001728 Coulomb per Square Meter --> No Conversion Required

FINAL ANSWER

-0.001728 Coulomb per Square Meter <-- Inversion Layer Charge

(Calculation completed in 00.020 seconds)

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< P Channel Enhancement Calculators

Drain Current in Triode Region of PMOS Transistor

LaTeX Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Drain Current in Triode Region of PMOS Transistor given Vsd

LaTeX Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

LaTeX Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Drain Current in Saturation Region of PMOS Transistor given Vov

LaTeX Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Inversion Layer Charge in PMOS Formula

LaTeX Go

Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)
Q_p = -C_ox*(V_GS-V_T)

What is the reason of inversion layer?

The inversion created from a cold front is especially evident when a shallow layer of polar air moves into lower latitudes. The air associated with the shallow air mass is colder than the air aloft, thus creating an inversion. Inversions promote stability within the vertical layer of the troposphere they exist.

How to Calculate Inversion Layer Charge in PMOS?

Inversion Layer Charge in PMOS calculator uses Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage) to calculate the Inversion Layer Charge, The Inversion Layer Charge in PMOS formula is defined as Inversion layer charge in a p-channel metal-oxide-semiconductor field-effect transistor (PMOS) refers to the accumulation of negatively charged carriers (electrons) at the interface between the p-type semiconductor substrate and the insulating layer (oxide) when a voltage is applied to the gate terminal. Inversion Layer Charge is denoted by Q_p symbol.

How to calculate Inversion Layer Charge in PMOS using this online calculator? To use this online calculator for Inversion Layer Charge in PMOS, enter Oxide Capacitance (C_ox), Voltage between Gate and Source (V_GS) & Threshold Voltage (V_T) and hit the calculate button. Here is how the Inversion Layer Charge in PMOS calculation can be explained with given input values -> -0.001728 = -0.0008*(2.86-0.7).

FAQ

What is Inversion Layer Charge in PMOS?

The Inversion Layer Charge in PMOS formula is defined as Inversion layer charge in a p-channel metal-oxide-semiconductor field-effect transistor (PMOS) refers to the accumulation of negatively charged carriers (electrons) at the interface between the p-type semiconductor substrate and the insulating layer (oxide) when a voltage is applied to the gate terminal and is represented as Q_p = -C_ox*(V_GS-V_T) or Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage). Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits, The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

How to calculate Inversion Layer Charge in PMOS?

The Inversion Layer Charge in PMOS formula is defined as Inversion layer charge in a p-channel metal-oxide-semiconductor field-effect transistor (PMOS) refers to the accumulation of negatively charged carriers (electrons) at the interface between the p-type semiconductor substrate and the insulating layer (oxide) when a voltage is applied to the gate terminal is calculated using Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage). To calculate Inversion Layer Charge in PMOS, you need Oxide Capacitance (C_ox), Voltage between Gate and Source (V_GS) & Threshold Voltage (V_T). With our tool, you need to enter the respective value for Oxide Capacitance, Voltage between Gate and Source & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Inversion Layer Charge?

In this formula, Inversion Layer Charge uses Oxide Capacitance, Voltage between Gate and Source & Threshold Voltage. We can use 1 other way(s) to calculate the same, which is/are as follows -

Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)

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