Instantaneous Drain Current using Voltage between Drain and Source Calculator

✖Transconductance parameter is the product of the process transconductance parameter and the transistor aspect ratio (W/L).ⓘ Transconductance Parameter [K_n]			+10% -10%
✖Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.ⓘ Voltage across Oxide [V_ox]			+10% -10%
✖Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.ⓘ Threshold Voltage [V_t]			+10% -10%
✖The voltage between gate and source is the voltage that falls across the gate-source terminal of the transistor.ⓘ Voltage between Gate and Source [V_gs]			+10% -10%

✖Drain current below threshold voltage is defined as the subthreshold current and varies exponentially with gate to source voltage.ⓘ Instantaneous Drain Current using Voltage between Drain and Source [i_d]

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Instantaneous Drain Current using Voltage between Drain and Source Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source
i_d = K_n*(V_ox-V_t)*V_gs
This formula uses 5 Variables

Variables Used

Drain Current - (Measured in Ampere) - Drain current below threshold voltage is defined as the subthreshold current and varies exponentially with gate to source voltage.
Transconductance Parameter - (Measured in Ampere per Square Volt) - Transconductance parameter is the product of the process transconductance parameter and the transistor aspect ratio (W/L).
Voltage across Oxide - (Measured in Volt) - Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals.
Voltage between Gate and Source - (Measured in Volt) - The voltage between gate and source is the voltage that falls across the gate-source terminal of the transistor.

STEP 1: Convert Input(s) to Base Unit

Transconductance Parameter: 2.95 Milliampere per Square Volt --> 0.00295 Ampere per Square Volt (Check conversion here)
Voltage across Oxide: 3.775 Volt --> 3.775 Volt No Conversion Required
Threshold Voltage: 2 Volt --> 2 Volt No Conversion Required
Voltage between Gate and Source: 3.34 Volt --> 3.34 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

i_d = K_n*(V_ox-V_t)*V_gs --> 0.00295*(3.775-2)*3.34

Evaluating ... ...

i_d = 0.017489075

STEP 3: Convert Result to Output's Unit

0.017489075 Ampere -->17.489075 Milliampere (Check conversion here)

FINAL ANSWER

17.489075 ≈ 17.48907 Milliampere <-- Drain Current

(Calculation completed in 00.004 seconds)

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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Jaipur Engineering College and Research Centre (JECRC), Jaipur

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Instantaneous Drain Current using Voltage between Drain and Source Formula

LaTeX Go

Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source
i_d = K_n*(V_ox-V_t)*V_gs

What is MOSFET and its application?

MOSFET is used for switching or amplifying signals. The ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. MOSFETs are now even more common than BJTs (bipolar junction transistors) in digital and analog circuits.

How to Calculate Instantaneous Drain Current using Voltage between Drain and Source?

Instantaneous Drain Current using Voltage between Drain and Source calculator uses Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source to calculate the Drain Current, The Instantaneous drain current using voltage between drain and source indicates the current conduction capability of the silicon chip; it can be used as a guide when comparing different devices. However, the rated maximum drain current should not be allowed to flow to the chip. Drain Current is denoted by i_d symbol.

How to calculate Instantaneous Drain Current using Voltage between Drain and Source using this online calculator? To use this online calculator for Instantaneous Drain Current using Voltage between Drain and Source, enter Transconductance Parameter (K_n), Voltage across Oxide (V_ox), Threshold Voltage (V_t) & Voltage between Gate and Source (V_gs) and hit the calculate button. Here is how the Instantaneous Drain Current using Voltage between Drain and Source calculation can be explained with given input values -> 17311.22 = 0.00295*(3.775-2)*3.34.

FAQ

What is Instantaneous Drain Current using Voltage between Drain and Source?

The Instantaneous drain current using voltage between drain and source indicates the current conduction capability of the silicon chip; it can be used as a guide when comparing different devices. However, the rated maximum drain current should not be allowed to flow to the chip and is represented as i_d = K_n*(V_ox-V_t)*V_gs or Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source. Transconductance parameter is the product of the process transconductance parameter and the transistor aspect ratio (W/L), Voltage across oxide is due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide, Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals & The voltage between gate and source is the voltage that falls across the gate-source terminal of the transistor.

How to calculate Instantaneous Drain Current using Voltage between Drain and Source?

The Instantaneous drain current using voltage between drain and source indicates the current conduction capability of the silicon chip; it can be used as a guide when comparing different devices. However, the rated maximum drain current should not be allowed to flow to the chip is calculated using Drain Current = Transconductance Parameter*(Voltage across Oxide-Threshold Voltage)*Voltage between Gate and Source. To calculate Instantaneous Drain Current using Voltage between Drain and Source, you need Transconductance Parameter (K_n), Voltage across Oxide (V_ox), Threshold Voltage (V_t) & Voltage between Gate and Source (V_gs). With our tool, you need to enter the respective value for Transconductance Parameter, Voltage across Oxide, Threshold Voltage & Voltage between Gate and Source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current?

In this formula, Drain Current uses Transconductance Parameter, Voltage across Oxide, Threshold Voltage & Voltage between Gate and Source. We can use 1 other way(s) to calculate the same, which is/are as follows -

Drain Current = (Fundamental Component Voltage+Total Instantaneous Drain Voltage)/Drain Resistance

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