Impurity with Intrinsic Concentration Solution

STEP 0: Pre-Calculation Summary
Formula Used
Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)
ni = sqrt((ne*p)/to)
This formula uses 1 Functions, 4 Variables
Functions Used
sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)
Variables Used
Intrinsic Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
Electron Concentration - (Measured in 1 per Cubic Meter) - Electron Concentration is influenced by various factors such as temperature, impurities or dopants added to the semiconductor material, and external electric or magnetic fields.
Hole Concentration - (Measured in 1 per Cubic Meter) - Hole Concentration imply a greater number of available charge carriers in the material, affecting its conductivity and various semiconductor device.
Temperature Impurity - (Measured in Kelvin) - Temperature Impurity a base index representing the average air temperature over different timescales.
STEP 1: Convert Input(s) to Base Unit
Electron Concentration: 50.6 1 per Cubic Centimeter --> 50600000 1 per Cubic Meter (Check conversion ​here)
Hole Concentration: 0.69 1 per Cubic Centimeter --> 690000 1 per Cubic Meter (Check conversion ​here)
Temperature Impurity: 20 Kelvin --> 20 Kelvin No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ni = sqrt((ne*p)/to) --> sqrt((50600000*690000)/20)
Evaluating ... ...
ni = 1321249.40870375
STEP 3: Convert Result to Output's Unit
1321249.40870375 1 per Cubic Meter -->1.32124940870375 1 per Cubic Centimeter (Check conversion ​here)
FINAL ANSWER
1.32124940870375 1.321249 1 per Cubic Centimeter <-- Intrinsic Concentration
(Calculation completed in 00.020 seconds)

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Impurity with Intrinsic Concentration Formula

​LaTeX ​Go
Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)
ni = sqrt((ne*p)/to)

Why are impurities added in intrinsic semiconductors?

Impurities are added into a semiconductor to actually increase the electric conductivity. The process of adding an impurity into the semiconductor to increase its ability to conduct electricity is known as doping and the impure semiconductor is known as a doped semiconductor.

How to Calculate Impurity with Intrinsic Concentration?

Impurity with Intrinsic Concentration calculator uses Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity) to calculate the Intrinsic Concentration, The Impurity With Intrinsic Concentration formula is defined as some impurity (either trivalent or pentavalent) is added to intrinsic semiconductor it will increase the concentration or density of charge carriers (either holes or electrons) and which in turn increase its conductivity. Intrinsic Concentration is denoted by ni symbol.

How to calculate Impurity with Intrinsic Concentration using this online calculator? To use this online calculator for Impurity with Intrinsic Concentration, enter Electron Concentration (ne), Hole Concentration (p) & Temperature Impurity (to) and hit the calculate button. Here is how the Impurity with Intrinsic Concentration calculation can be explained with given input values -> 1.2E-6 = sqrt((50600000*690000)/20).

FAQ

What is Impurity with Intrinsic Concentration?
The Impurity With Intrinsic Concentration formula is defined as some impurity (either trivalent or pentavalent) is added to intrinsic semiconductor it will increase the concentration or density of charge carriers (either holes or electrons) and which in turn increase its conductivity and is represented as ni = sqrt((ne*p)/to) or Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity). Electron Concentration is influenced by various factors such as temperature, impurities or dopants added to the semiconductor material, and external electric or magnetic fields, Hole Concentration imply a greater number of available charge carriers in the material, affecting its conductivity and various semiconductor device & Temperature Impurity a base index representing the average air temperature over different timescales.
How to calculate Impurity with Intrinsic Concentration?
The Impurity With Intrinsic Concentration formula is defined as some impurity (either trivalent or pentavalent) is added to intrinsic semiconductor it will increase the concentration or density of charge carriers (either holes or electrons) and which in turn increase its conductivity is calculated using Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity). To calculate Impurity with Intrinsic Concentration, you need Electron Concentration (ne), Hole Concentration (p) & Temperature Impurity (to). With our tool, you need to enter the respective value for Electron Concentration, Hole Concentration & Temperature Impurity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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