Gates on Critical Path Calculator

✖A Duty cycle or power cycle is the fraction of one period in which a signal or system is active.ⓘ Duty Cycle [D]			+10% -10%
✖Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current.ⓘ Off Current [i_off]			+10% -10%
✖Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.ⓘ Base Collector Voltage [V_bc]			+10% -10%
✖Capacitance of Gate to Channel is the capacitance due to the overlap of the source and the channel regions by the polysilicon gate and is independent of applied voltage.ⓘ Capacitance of Gate to Channel [C_g]			+10% -10%

✖Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.ⓘ Gates on Critical Path [N_g]

⎘ Copy

👎

Formula

LaTeX

Reset

👍

Download CMOS Power Metrics Formulas PDF PDF Image

Gates on Critical Path Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage)
N_g = D*(i_off*(10^V_bc))/(C_g*[BoltZ]*V_bc)
This formula uses 1 Constants, 5 Variables

Constants Used

[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23

Variables Used

Gates on Critical Path - Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.
Duty Cycle - A Duty cycle or power cycle is the fraction of one period in which a signal or system is active.
Off Current - (Measured in Ampere) - Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current.
Base Collector Voltage - (Measured in Volt) - Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.
Capacitance of Gate to Channel - (Measured in Farad) - Capacitance of Gate to Channel is the capacitance due to the overlap of the source and the channel regions by the polysilicon gate and is independent of applied voltage.

STEP 1: Convert Input(s) to Base Unit

Duty Cycle: 1.3E-25 --> No Conversion Required
Off Current: 0.01 Milliampere --> 1E-05 Ampere (Check conversion here)
Base Collector Voltage: 2.02 Volt --> 2.02 Volt No Conversion Required
Capacitance of Gate to Channel: 5.1 Millifarad --> 0.0051 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

N_g = D*(i_off*(10^V_bc))/(C_g*[BoltZ]*V_bc) --> 1.3E-25*(1E-05*(10^2.02))/(0.0051*[BoltZ]*2.02)

Evaluating ... ...

N_g = 0.000957058919420363

STEP 3: Convert Result to Output's Unit

0.000957058919420363 --> No Conversion Required

FINAL ANSWER

0.000957058919420363 ≈ 0.000957 <-- Gates on Critical Path

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » CMOS Design and Applications » CMOS Power Metrics » Gates on Critical Path

Credits

Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< CMOS Power Metrics Calculators

Activity Factor

LaTeX Go Activity Factor = Switching Power/(Capacitance*Base Collector Voltage^2*Frequency)

Switching Power

LaTeX Go Switching Power = Activity Factor*(Capacitance*Base Collector Voltage^2*Frequency)

Short-Circuit Power in CMOS

LaTeX Go Short-Circuit Power = Dynamic Power-Switching Power

Dynamic Power in CMOS

LaTeX Go Dynamic Power = Short-Circuit Power+Switching Power

Gates on Critical Path Formula

LaTeX Go

Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage)
N_g = D*(i_off*(10^V_bc))/(C_g*[BoltZ]*V_bc)

What is Subthreshold conduction?

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

How to Calculate Gates on Critical Path?

Gates on Critical Path calculator uses Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage) to calculate the Gates on Critical Path, The Gates on critical path formula is defined as the total number of the logic gate required during one cycle time in CMOS. Gates on Critical Path is denoted by N_g symbol.

How to calculate Gates on Critical Path using this online calculator? To use this online calculator for Gates on Critical Path, enter Duty Cycle (D), Off Current (i_off), Base Collector Voltage (V_bc) & Capacitance of Gate to Channel (C_g) and hit the calculate button. Here is how the Gates on Critical Path calculation can be explained with given input values -> 0.957059 = 1.3E-25*(1E-05*(10^2.02))/(5.1E-06*[BoltZ]*2.02).

FAQ

What is Gates on Critical Path?

The Gates on critical path formula is defined as the total number of the logic gate required during one cycle time in CMOS and is represented as N_g = D*(i_off*(10^V_bc))/(C_g*[BoltZ]*V_bc) or Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage). A Duty cycle or power cycle is the fraction of one period in which a signal or system is active, Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current, Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state & Capacitance of Gate to Channel is the capacitance due to the overlap of the source and the channel regions by the polysilicon gate and is independent of applied voltage.

How to calculate Gates on Critical Path?

The Gates on critical path formula is defined as the total number of the logic gate required during one cycle time in CMOS is calculated using Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage). To calculate Gates on Critical Path, you need Duty Cycle (D), Off Current (i_off), Base Collector Voltage (V_bc) & Capacitance of Gate to Channel (C_g). With our tool, you need to enter the respective value for Duty Cycle, Off Current, Base Collector Voltage & Capacitance of Gate to Channel and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search