Gate to Source Channel Width of MOSFET Solution

STEP 0: Pre-Calculation Summary
Formula Used
Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)
Wc = Coc/(Cox*Lov)
This formula uses 4 Variables
Variables Used
Channel Width - (Measured in Meter) - Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Overlap Capacitance - (Measured in Farad) - Overlap capacitance refers to the capacitance that arises between two conductive regions in close proximity to each other, but not directly connected.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Overlap Length - (Measured in Meter) - Overlap Length is the average distance that the excess carriers can cover before they recombine.
STEP 1: Convert Input(s) to Base Unit
Overlap Capacitance: 3.8E-07 Microfarad --> 3.8E-13 Farad (Check conversion ​here)
Oxide Capacitance: 940 Microfarad --> 0.00094 Farad (Check conversion ​here)
Overlap Length: 40.6 Micrometer --> 4.06E-05 Meter (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Wc = Coc/(Cox*Lov) --> 3.8E-13/(0.00094*4.06E-05)
Evaluating ... ...
Wc = 9.95702756524473E-06
STEP 3: Convert Result to Output's Unit
9.95702756524473E-06 Meter -->9.95702756524473 Micrometer (Check conversion ​here)
FINAL ANSWER
9.95702756524473 9.957028 Micrometer <-- Channel Width
(Calculation completed in 00.020 seconds)

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Birsa Institute of Technology (BIT), Sindri
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Internal Capacitive Effects and High Frequency Model Calculators

Transition Frequency of MOSFET
​ LaTeX ​ Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))
Total Capacitance between Gate and Channel of MOSFETs
​ LaTeX ​ Go Gate Channel Capacitance = Oxide Capacitance*Channel Width*Channel Length
Gate to Source Channel Width of MOSFET
​ LaTeX ​ Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)
Overlap Capacitance of MOSFET
​ LaTeX ​ Go Overlap Capacitance = Channel Width*Oxide Capacitance*Overlap Length

MOSFET Characterstics Calculators

Voltage Gain given Load Resistance of MOSFET
​ LaTeX ​ Go Voltage Gain = Transconductance*(1/(1/Load Resistance+1/Output Resistance))/(1+Transconductance*Source Resistance)
Maximum Voltage Gain at Bias Point
​ LaTeX ​ Go Maximum Voltage Gain = 2*(Supply Voltage-Effective Voltage)/(Effective Voltage)
Voltage Gain given Drain Voltage
​ LaTeX ​ Go Voltage Gain = (Drain Current*Load Resistance*2)/Effective Voltage
Maximum Voltage Gain given all Voltages
​ LaTeX ​ Go Maximum Voltage Gain = (Supply Voltage-0.3)/Thermal Voltage

Gate to Source Channel Width of MOSFET Formula

​LaTeX ​Go
Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)
Wc = Coc/(Cox*Lov)

What is MOSFET and how it works?

In general, the MOSFET works as a switch, the MOSFET controls the voltage and current flow between the source and drain. The working of the MOSFET depends on the MOS capacitor, which is the semiconductor surface below the oxide layers between the source and drain terminal.

How to Calculate Gate to Source Channel Width of MOSFET?

Gate to Source Channel Width of MOSFET calculator uses Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length) to calculate the Channel Width, The Gate to Source Channel Width of MOSFET formula is defined as the ratio of the width of the gate electrode to the width of the source electrode, expressed as a percentage. Channel Width is denoted by Wc symbol.

How to calculate Gate to Source Channel Width of MOSFET using this online calculator? To use this online calculator for Gate to Source Channel Width of MOSFET, enter Overlap Capacitance (Coc), Oxide Capacitance (Cox) & Overlap Length (Lov) and hit the calculate button. Here is how the Gate to Source Channel Width of MOSFET calculation can be explained with given input values -> 1E+7 = 3.8E-13/(0.00094*4.06E-05).

FAQ

What is Gate to Source Channel Width of MOSFET?
The Gate to Source Channel Width of MOSFET formula is defined as the ratio of the width of the gate electrode to the width of the source electrode, expressed as a percentage and is represented as Wc = Coc/(Cox*Lov) or Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length). Overlap capacitance refers to the capacitance that arises between two conductive regions in close proximity to each other, but not directly connected, Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits & Overlap Length is the average distance that the excess carriers can cover before they recombine.
How to calculate Gate to Source Channel Width of MOSFET?
The Gate to Source Channel Width of MOSFET formula is defined as the ratio of the width of the gate electrode to the width of the source electrode, expressed as a percentage is calculated using Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length). To calculate Gate to Source Channel Width of MOSFET, you need Overlap Capacitance (Coc), Oxide Capacitance (Cox) & Overlap Length (Lov). With our tool, you need to enter the respective value for Overlap Capacitance, Oxide Capacitance & Overlap Length and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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