HCF of three numbers

Gate to Collector Potential Calculator

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✖Gate to Source Potential is voltage between gate and emitter.ⓘ Gate to Source Potential [V_gs]			+10% -10%
✖Gate to Drain Potential is defined as the voltage across the gate and the drain junction of the MOSFETs.ⓘ Gate to Drain Potential [V_gd]			+10% -10%

✖Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.ⓘ Gate to Collector Potential [V_gc]

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Gate to Collector Potential Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2
V_gc = (V_gs+V_gd)/2
This formula uses 3 Variables

Variables Used

Gate to Channel Voltage - (Measured in Volt) - Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.
Gate to Source Potential - (Measured in Volt) - Gate to Source Potential is voltage between gate and emitter.
Gate to Drain Potential - (Measured in Volt) - Gate to Drain Potential is defined as the voltage across the gate and the drain junction of the MOSFETs.

STEP 1: Convert Input(s) to Base Unit

Gate to Source Potential: 5 Volt --> 5 Volt No Conversion Required
Gate to Drain Potential: 9.02 Volt --> 9.02 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_gc = (V_gs+V_gd)/2 --> (5+9.02)/2

Evaluating ... ...

V_gc = 7.01

STEP 3: Convert Result to Output's Unit

7.01 Volt --> No Conversion Required

FINAL ANSWER

7.01 Volt <-- Gate to Channel Voltage

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< Analog VLSI Design Calculators

Gate to Base Capacitance

LaTeX Go Gate to Base Capacitance = Gate Capacitance-(Gate to Source Capacitance+Gate to Drain Capacitance)

Drain Voltage

LaTeX Go Base Collector Voltage = sqrt(Dynamic Power/(Frequency*Capacitance))

Gate to Channel Voltage

LaTeX Go Gate to Channel Voltage = (Channel Charge/Gate Capacitance)+Threshold Voltage

Gate to Collector Potential

LaTeX Go Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2

Gate to Collector Potential Formula

LaTeX Go

Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2
V_gc = (V_gs+V_gd)/2

What is the significance of long-channel model?

The long-channel model assumes that the current through an OFF transistor is 0. When a transistor turns ON (Vgs > Vt), the gate attracts carriers (electrons) to form a channel. The electrons drift from source to drain at a rate proportional to the electric field between these regions. Thus, we can compute currents if we
know the amount of charge in the channel and the rate at which it moves.

How to Calculate Gate to Collector Potential?

Gate to Collector Potential calculator uses Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2 to calculate the Gate to Channel Voltage, Gate to Collector Potential formula is defined as the total voltage between the gate and the collector region of the MOSFETs. Gate to Channel Voltage is denoted by V_gc symbol.

How to calculate Gate to Collector Potential using this online calculator? To use this online calculator for Gate to Collector Potential, enter Gate to Source Potential (V_gs) & Gate to Drain Potential (V_gd) and hit the calculate button. Here is how the Gate to Collector Potential calculation can be explained with given input values -> 7.01 = (5+9.02)/2.

FAQ

What is Gate to Collector Potential?

Gate to Collector Potential formula is defined as the total voltage between the gate and the collector region of the MOSFETs and is represented as V_gc = (V_gs+V_gd)/2 or Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2. Gate to Source Potential is voltage between gate and emitter & Gate to Drain Potential is defined as the voltage across the gate and the drain junction of the MOSFETs.

How to calculate Gate to Collector Potential?

Gate to Collector Potential formula is defined as the total voltage between the gate and the collector region of the MOSFETs is calculated using Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2. To calculate Gate to Collector Potential, you need Gate to Source Potential (V_gs) & Gate to Drain Potential (V_gd). With our tool, you need to enter the respective value for Gate to Source Potential & Gate to Drain Potential and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Gate to Channel Voltage?

In this formula, Gate to Channel Voltage uses Gate to Source Potential & Gate to Drain Potential. We can use 1 other way(s) to calculate the same, which is/are as follows -

Gate to Channel Voltage = (Channel Charge/Gate Capacitance)+Threshold Voltage

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