Gate Metallization Resistance Calculator

✖Drain Resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage.ⓘ Drain Resistance [R_d]			+10% -10%
✖Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.ⓘ Cut-off Frequency [f_co]			+10% -10%
✖Maximum Frequency of Oscillations is defined as the practical upper bound for useful circuit operation with MESFET.ⓘ Maximum Frequency of Oscillations [f_m]			+10% -10%
✖Source Resistance is a measure of how much this source opposes the load from drawing current from it.ⓘ Source Resistance [R_s]			+10% -10%
✖Input Resistance is defined as the total internal resistance as experienced by MESFET.ⓘ Input Resistance [R_i]			+10% -10%

✖Gate Metallization Resistance is defined as the resistance of metallization of a FET gate stripe that has effect of placing a non-linear resistance in series with the gate junction.ⓘ Gate Metallization Resistance [R_g]

⎘ Copy

👎

Formula

LaTeX

Reset

👍

Download MESFET Characteristics Formulas PDF PDF Image

Gate Metallization Resistance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance)
R_g = ((R_d*f_co^2)/(4*f_m^2))-(R_s+R_i)
This formula uses 6 Variables

Variables Used

Gate Metallization Resistance - (Measured in Ohm) - Gate Metallization Resistance is defined as the resistance of metallization of a FET gate stripe that has effect of placing a non-linear resistance in series with the gate junction.
Drain Resistance - (Measured in Ohm) - Drain Resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage.
Cut-off Frequency - (Measured in Hertz) - Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through.
Maximum Frequency of Oscillations - (Measured in Hertz) - Maximum Frequency of Oscillations is defined as the practical upper bound for useful circuit operation with MESFET.
Source Resistance - (Measured in Ohm) - Source Resistance is a measure of how much this source opposes the load from drawing current from it.
Input Resistance - (Measured in Ohm) - Input Resistance is defined as the total internal resistance as experienced by MESFET.

STEP 1: Convert Input(s) to Base Unit

Drain Resistance: 450 Ohm --> 450 Ohm No Conversion Required
Cut-off Frequency: 30.05 Hertz --> 30.05 Hertz No Conversion Required
Maximum Frequency of Oscillations: 65 Hertz --> 65 Hertz No Conversion Required
Source Resistance: 5.75 Ohm --> 5.75 Ohm No Conversion Required
Input Resistance: 15.5 Ohm --> 15.5 Ohm No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

R_g = ((R_d*f_co^2)/(4*f_m^2))-(R_s+R_i) --> ((450*30.05^2)/(4*65^2))-(5.75+15.5)

Evaluating ... ...

R_g = 2.79444526627219

STEP 3: Convert Result to Output's Unit

2.79444526627219 Ohm --> No Conversion Required

FINAL ANSWER

2.79444526627219 ≈ 2.794445 Ohm <-- Gate Metallization Resistance

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » Microwave Theory » Microwave Semiconductor Devices » MESFET Characteristics » Gate Metallization Resistance

Credits

Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< MESFET Characteristics Calculators

Gate Source Capacitance

LaTeX Go Gate Source Capacitance = Transconductance/(2*pi*Cut-off Frequency)

Transconductance in MESFET

LaTeX Go Transconductance = 2*Gate Source Capacitance*pi*Cut-off Frequency

Gate Length of MESFET

LaTeX Go Gate Length = Saturated Drift Velocity/(4*pi*Cut-off Frequency)

Cut-off Frequency

LaTeX Go Cut-off Frequency = Saturated Drift Velocity/(4*pi*Gate Length)

Gate Metallization Resistance Formula

LaTeX Go

Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance)
R_g = ((R_d*f_co^2)/(4*f_m^2))-(R_s+R_i)

What is MESFET?

A MESFET (metal–semiconductor field-effect transistor) is a field-effect transistor semiconductor device similar to a JFET with a Schottky (metal–semiconductor) junction instead of a p–n junction for a gate.

How to Calculate Gate Metallization Resistance?

Gate Metallization Resistance calculator uses Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance) to calculate the Gate Metallization Resistance, The Gate Metallization Resistance formula is defined as the resistance associated with the metal contacts that are deposited on top of the semiconductor material to form the gate electrode. Gate Metallization Resistance is denoted by R_g symbol.

How to calculate Gate Metallization Resistance using this online calculator? To use this online calculator for Gate Metallization Resistance, enter Drain Resistance (R_d), Cut-off Frequency (f_co), Maximum Frequency of Oscillations (f_m), Source Resistance (R_s) & Input Resistance (R_i) and hit the calculate button. Here is how the Gate Metallization Resistance calculation can be explained with given input values -> 2.794445 = ((450*30.05^2)/(4*65^2))-(5.75+15.5).

FAQ

What is Gate Metallization Resistance?

The Gate Metallization Resistance formula is defined as the resistance associated with the metal contacts that are deposited on top of the semiconductor material to form the gate electrode and is represented as R_g = ((R_d*f_co^2)/(4*f_m^2))-(R_s+R_i) or Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance). Drain Resistance is the ratio of change in drain to source voltage to corresponding change in drain current for a constant gate to source voltage, Cut-off Frequency is defined as corner frequency is a boundary in system's frequency response at which energy flowing through system begins to be reduced rather than passing through, Maximum Frequency of Oscillations is defined as the practical upper bound for useful circuit operation with MESFET, Source Resistance is a measure of how much this source opposes the load from drawing current from it & Input Resistance is defined as the total internal resistance as experienced by MESFET.

How to calculate Gate Metallization Resistance?

The Gate Metallization Resistance formula is defined as the resistance associated with the metal contacts that are deposited on top of the semiconductor material to form the gate electrode is calculated using Gate Metallization Resistance = ((Drain Resistance*Cut-off Frequency^2)/(4*Maximum Frequency of Oscillations^2))-(Source Resistance+Input Resistance). To calculate Gate Metallization Resistance, you need Drain Resistance (R_d), Cut-off Frequency (f_co), Maximum Frequency of Oscillations (f_m), Source Resistance (R_s) & Input Resistance (R_i). With our tool, you need to enter the respective value for Drain Resistance, Cut-off Frequency, Maximum Frequency of Oscillations, Source Resistance & Input Resistance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search