Gate Leakage through Gate Dielectric Calculator

✖CMOS Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices.ⓘ CMOS Static Power [P_st]			+10% -10%
✖Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.ⓘ Base Collector Voltage [V_bc]			+10% -10%
✖Subthreshold Current is subthreshold leakage through OFF transistors.ⓘ Subthreshold Current [i_st]			+10% -10%
✖Contention Current is defined as the contention current occuring in the ratioed circuits.ⓘ Contention Current [i_con]			+10% -10%
✖Junction Current is junction leakage from source/drain diffusions.ⓘ Junction Current [i_j]			+10% -10%

✖Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance.ⓘ Gate Leakage through Gate Dielectric [i_g]

⎘ Copy

👎

Formula

LaTeX

Reset

👍

Download CMOS Power Metrics Formulas PDF PDF Image

Gate Leakage through Gate Dielectric Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current)
i_g = (P_st/V_bc)-(i_st+i_con+i_j)
This formula uses 6 Variables

Variables Used

Gate Current - (Measured in Ampere) - Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance.
CMOS Static Power - (Measured in Watt) - CMOS Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices.
Base Collector Voltage - (Measured in Volt) - Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.
Subthreshold Current - (Measured in Ampere) - Subthreshold Current is subthreshold leakage through OFF transistors.
Contention Current - (Measured in Ampere) - Contention Current is defined as the contention current occuring in the ratioed circuits.
Junction Current - (Measured in Ampere) - Junction Current is junction leakage from source/drain diffusions.

STEP 1: Convert Input(s) to Base Unit

CMOS Static Power: 67.37 Milliwatt --> 0.06737 Watt (Check conversion here)
Base Collector Voltage: 2.02 Volt --> 2.02 Volt No Conversion Required
Subthreshold Current: 1.6 Milliampere --> 0.0016 Ampere (Check conversion here)
Contention Current: 25.75 Milliampere --> 0.02575 Ampere (Check conversion here)
Junction Current: 1.5 Milliampere --> 0.0015 Ampere (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

i_g = (P_st/V_bc)-(i_st+i_con+i_j) --> (0.06737/2.02)-(0.0016+0.02575+0.0015)

Evaluating ... ...

i_g = 0.00450148514851485

STEP 3: Convert Result to Output's Unit

0.00450148514851485 Ampere -->4.50148514851485 Milliampere (Check conversion here)

FINAL ANSWER

4.50148514851485 ≈ 4.501485 Milliampere <-- Gate Current

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » CMOS Design and Applications » CMOS Power Metrics » Gate Leakage through Gate Dielectric

Credits

Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< CMOS Power Metrics Calculators

Activity Factor

LaTeX Go Activity Factor = Switching Power/(Capacitance*Base Collector Voltage^2*Frequency)

Switching Power

LaTeX Go Switching Power = Activity Factor*(Capacitance*Base Collector Voltage^2*Frequency)

Short-Circuit Power in CMOS

LaTeX Go Short-Circuit Power = Dynamic Power-Switching Power

Dynamic Power in CMOS

LaTeX Go Dynamic Power = Short-Circuit Power+Switching Power

Gate Leakage through Gate Dielectric Formula

LaTeX Go

Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current)
i_g = (P_st/V_bc)-(i_st+i_con+i_j)

Is MOSFET a current-control device?

The MOSFET, like the FET, is a voltage controlled device. A voltage input to the gate controls the flow of current from source to drain. The gate does not draw a continuous current.

How to Calculate Gate Leakage through Gate Dielectric?

Gate Leakage through Gate Dielectric calculator uses Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current) to calculate the Gate Current, The gate leakage through gate dielectric formula is calculated when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current. This is because of a very high drain-source impedance. Gate Current is denoted by i_g symbol.

How to calculate Gate Leakage through Gate Dielectric using this online calculator? To use this online calculator for Gate Leakage through Gate Dielectric, enter CMOS Static Power (P_st), Base Collector Voltage (V_bc), Subthreshold Current (i_st), Contention Current (i_con) & Junction Current (i_j) and hit the calculate button. Here is how the Gate Leakage through Gate Dielectric calculation can be explained with given input values -> 25131.49 = (0.06737/2.02)-(0.0016+0.02575+0.0015).

FAQ

What is Gate Leakage through Gate Dielectric?

The gate leakage through gate dielectric formula is calculated when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current. This is because of a very high drain-source impedance and is represented as i_g = (P_st/V_bc)-(i_st+i_con+i_j) or Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current). CMOS Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices, Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state, Subthreshold Current is subthreshold leakage through OFF transistors, Contention Current is defined as the contention current occuring in the ratioed circuits & Junction Current is junction leakage from source/drain diffusions.

How to calculate Gate Leakage through Gate Dielectric?

The gate leakage through gate dielectric formula is calculated when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current. This is because of a very high drain-source impedance is calculated using Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current). To calculate Gate Leakage through Gate Dielectric, you need CMOS Static Power (P_st), Base Collector Voltage (V_bc), Subthreshold Current (i_st), Contention Current (i_con) & Junction Current (i_j). With our tool, you need to enter the respective value for CMOS Static Power, Base Collector Voltage, Subthreshold Current, Contention Current & Junction Current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search