Gate Drain Capacitance of FET Calculator

✖Gate Drain Capacitance Off Time FET denotes the duration for the gate-to-drain capacitance to discharge, influencing switching characteristics and power efficiency in electronic circuits.ⓘ Gate Drain Capacitance Off Time FET [T_gd-off(fet)]			+10% -10%
✖Gate to Drain Voltage FET is the voltage difference between the gate and drain terminals of an FET.ⓘ Gate to Drain Voltage FET [V_gd(fet)]			+10% -10%
✖Surface Potential FET operates based on the surface potential of the semiconductor channel, controlling the flow of current through a gate voltage without generating inversion layers.ⓘ Surface Potential FET [Ψ_0(fet)]			+10% -10%

✖Gate Drain Capacitance FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions.ⓘ Gate Drain Capacitance of FET [C_gd(fet)]

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Gate Drain Capacitance of FET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Drain Capacitance FET = Gate Drain Capacitance Off Time FET/(1-Gate to Drain Voltage FET/Surface Potential FET)^(1/3)
C_gd(fet) = T_gd-off(fet)/(1-V_gd(fet)/Ψ_0(fet))^(1/3)
This formula uses 4 Variables

Variables Used

Gate Drain Capacitance FET - (Measured in Farad) - Gate Drain Capacitance FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions.
Gate Drain Capacitance Off Time FET - (Measured in Second) - Gate Drain Capacitance Off Time FET denotes the duration for the gate-to-drain capacitance to discharge, influencing switching characteristics and power efficiency in electronic circuits.
Gate to Drain Voltage FET - (Measured in Volt) - Gate to Drain Voltage FET is the voltage difference between the gate and drain terminals of an FET.
Surface Potential FET - (Measured in Volt) - Surface Potential FET operates based on the surface potential of the semiconductor channel, controlling the flow of current through a gate voltage without generating inversion layers.

STEP 1: Convert Input(s) to Base Unit

Gate Drain Capacitance Off Time FET: 6.47 Second --> 6.47 Second No Conversion Required
Gate to Drain Voltage FET: 0.0128 Volt --> 0.0128 Volt No Conversion Required
Surface Potential FET: 4.976 Volt --> 4.976 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_gd(fet) = T_gd-off(fet)/(1-V_gd(fet)/Ψ_0(fet))^(1/3) --> 6.47/(1-0.0128/4.976)^(1/3)

Evaluating ... ...

C_gd(fet) = 6.47555722841382

STEP 3: Convert Result to Output's Unit

6.47555722841382 Farad --> No Conversion Required

FINAL ANSWER

6.47555722841382 ≈ 6.475557 Farad <-- Gate Drain Capacitance FET

(Calculation completed in 00.020 seconds)

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< FET Calculators

Transconductance of FET

LaTeX Go Forward Transconductance FET = (2*Zero Bias Drain Current)/Pinch OFF Voltage*(1-Drain Source Voltage FET/Pinch OFF Voltage)

Drain Source Voltage of FET

LaTeX Go Drain Source Voltage FET = Supply Voltage at Drain FET-Drain Current FET*(Drain Resistance FET+Source Resistance FET)

Drain Current of FET

LaTeX Go Drain Current FET = Zero Bias Drain Current*(1-Drain Source Voltage FET/Cutt-off Voltage FET)^2

Pinch off Voltage of FET

LaTeX Go Pinch OFF Voltage = Pinch OFF Drain Source Voltage FET-Drain Source Voltage FET

Gate Drain Capacitance of FET Formula

LaTeX Go

Gate Drain Capacitance FET = Gate Drain Capacitance Off Time FET/(1-Gate to Drain Voltage FET/Surface Potential FET)^(1/3)
C_gd(fet) = T_gd-off(fet)/(1-V_gd(fet)/Ψ_0(fet))^(1/3)

What is Gate Drain Capacitance of FET ?

The gate-drain capacitance (C_gd) of a field-effect transistor (FET) is a parameter that characterizes the capacitance between the gate and drain terminals of the FET. It is a critical parameter in FETs and plays a significant role in the high-frequency and switching performance of these devices.

How to Calculate Gate Drain Capacitance of FET?

Gate Drain Capacitance of FET calculator uses Gate Drain Capacitance FET = Gate Drain Capacitance Off Time FET/(1-Gate to Drain Voltage FET/Surface Potential FET)^(1/3) to calculate the Gate Drain Capacitance FET, Gate Drain Capacitance of FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions is a parasitic capacitance that can affect the performance of FET circuits. Use a gate driver with a higher output current. This will help to charge and discharge the gate capacitance more quickly. C_gd can affect the switching speed, gain, and bandwidth of FET circuits. A higher Cgd can slow down the switching speed and reduce the gain and bandwidth of the circuit. Gate Drain Capacitance FET is denoted by C_gd(fet) symbol.

How to calculate Gate Drain Capacitance of FET using this online calculator? To use this online calculator for Gate Drain Capacitance of FET, enter Gate Drain Capacitance Off Time FET (T_gd-off(fet)), Gate to Drain Voltage FET (V_gd(fet)) & Surface Potential FET (Ψ_0(fet)) and hit the calculate button. Here is how the Gate Drain Capacitance of FET calculation can be explained with given input values -> 6.475557 = 6.47/(1-0.0128/4.976)^(1/3).

FAQ

What is Gate Drain Capacitance of FET?

Gate Drain Capacitance of FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions is a parasitic capacitance that can affect the performance of FET circuits. Use a gate driver with a higher output current. This will help to charge and discharge the gate capacitance more quickly. C_gd can affect the switching speed, gain, and bandwidth of FET circuits. A higher Cgd can slow down the switching speed and reduce the gain and bandwidth of the circuit and is represented as C_gd(fet) = T_gd-off(fet)/(1-V_gd(fet)/Ψ_0(fet))^(1/3) or Gate Drain Capacitance FET = Gate Drain Capacitance Off Time FET/(1-Gate to Drain Voltage FET/Surface Potential FET)^(1/3). Gate Drain Capacitance Off Time FET denotes the duration for the gate-to-drain capacitance to discharge, influencing switching characteristics and power efficiency in electronic circuits, Gate to Drain Voltage FET is the voltage difference between the gate and drain terminals of an FET & Surface Potential FET operates based on the surface potential of the semiconductor channel, controlling the flow of current through a gate voltage without generating inversion layers.

How to calculate Gate Drain Capacitance of FET?

Gate Drain Capacitance of FET is the capacitance between the gate and drain terminals of the FET. It is caused by the overlap between the gate and drain regions is a parasitic capacitance that can affect the performance of FET circuits. Use a gate driver with a higher output current. This will help to charge and discharge the gate capacitance more quickly. C_gd can affect the switching speed, gain, and bandwidth of FET circuits. A higher Cgd can slow down the switching speed and reduce the gain and bandwidth of the circuit is calculated using Gate Drain Capacitance FET = Gate Drain Capacitance Off Time FET/(1-Gate to Drain Voltage FET/Surface Potential FET)^(1/3). To calculate Gate Drain Capacitance of FET, you need Gate Drain Capacitance Off Time FET (T_gd-off(fet)), Gate to Drain Voltage FET (V_gd(fet)) & Surface Potential FET (Ψ_0(fet)). With our tool, you need to enter the respective value for Gate Drain Capacitance Off Time FET, Gate to Drain Voltage FET & Surface Potential FET and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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