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Gate Capacitance Calculator

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VLSI Material Optimization Analog VLSI Design

✖Channel Charge is defined as force experienced of a matter, when placed in an electromagnetic field.ⓘ Channel Charge [Q_ch]			+10% -10%
✖Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.ⓘ Gate to Channel Voltage [V_gc]			+10% -10%
✖Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.ⓘ Threshold Voltage [V_t]			+10% -10%

✖Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.ⓘ Gate Capacitance [C_g]

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Gate Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)
C_g = Q_ch/(V_gc-V_t)
This formula uses 4 Variables

Variables Used

Gate Capacitance - (Measured in Farad) - Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.
Channel Charge - (Measured in Coulomb) - Channel Charge is defined as force experienced of a matter, when placed in an electromagnetic field.
Gate to Channel Voltage - (Measured in Volt) - Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.

STEP 1: Convert Input(s) to Base Unit

Channel Charge: 0.4 Millicoulomb --> 0.0004 Coulomb (Check conversion here)
Gate to Channel Voltage: 7.011 Volt --> 7.011 Volt No Conversion Required
Threshold Voltage: 0.3 Volt --> 0.3 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_g = Q_ch/(V_gc-V_t) --> 0.0004/(7.011-0.3)

Evaluating ... ...

C_g = 5.96036358217851E-05

STEP 3: Convert Result to Output's Unit

5.96036358217851E-05 Farad -->59.6036358217851 Microfarad (Check conversion here)

FINAL ANSWER

59.6036358217851 ≈ 59.60364 Microfarad <-- Gate Capacitance

(Calculation completed in 00.004 seconds)

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< VLSI Material Optimization Calculators

Body Effect Coefficient

LaTeX Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

DIBL Coefficient

LaTeX Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Channel Charge

LaTeX Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Critical Voltage

LaTeX Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Capacitance Formula

LaTeX Go

Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)
C_g = Q_ch/(V_gc-V_t)

What are applications of calculating Gate Capacitance in VLSI?

Calculating gate capacitance in (VLSI) is crucial for optimizing power consumption and signal integrity. It helps in designing efficient CMOS circuits, determining delays, and minimizing switching power. This knowledge is vital for achieving high-performance, low-power integrated circuits in applications like smartphones, IoT devices, and microprocessors.

How to Calculate Gate Capacitance?

Gate Capacitance calculator uses Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage) to calculate the Gate Capacitance, The Gate Capacitance formula is defined as the capacitance of the gate terminal of a field-effect transistor. It can be expressed as the absolute capacitance of the gate of a transistor, or as the capacitance per unit area of an integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology. Gate Capacitance is denoted by C_g symbol.

How to calculate Gate Capacitance using this online calculator? To use this online calculator for Gate Capacitance, enter Channel Charge (Q_ch), Gate to Channel Voltage (V_gc) & Threshold Voltage (V_t) and hit the calculate button. Here is how the Gate Capacitance calculation can be explained with given input values -> 6E+7 = 0.0004/(7.011-0.3).

FAQ

What is Gate Capacitance?

The Gate Capacitance formula is defined as the capacitance of the gate terminal of a field-effect transistor. It can be expressed as the absolute capacitance of the gate of a transistor, or as the capacitance per unit area of an integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology and is represented as C_g = Q_ch/(V_gc-V_t) or Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage). Channel Charge is defined as force experienced of a matter, when placed in an electromagnetic field, Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage & Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.

How to calculate Gate Capacitance?

The Gate Capacitance formula is defined as the capacitance of the gate terminal of a field-effect transistor. It can be expressed as the absolute capacitance of the gate of a transistor, or as the capacitance per unit area of an integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology is calculated using Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage). To calculate Gate Capacitance, you need Channel Charge (Q_ch), Gate to Channel Voltage (V_gc) & Threshold Voltage (V_t). With our tool, you need to enter the respective value for Channel Charge, Gate to Channel Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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