Fermi Potential for P Type Calculator

✖Absolute Temperature is a measure of the thermal energy in a system and is measured in kelvins.ⓘ Absolute Temperature [T_a]			+10% -10%
✖Intrinsic Carrier Concentration is a fundamental property of a semiconductor material and represents the concentration of thermally generated charge carriers in the absence of any external influences.ⓘ Intrinsic Carrier Concentration [n_i]			+10% -10%
✖Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.ⓘ Doping Concentration of Acceptor [N_A]			+10% -10%

✖Fermi Potential for P Type is the energy level representing the highest energy electrons in the valence band at thermal equilibrium.ⓘ Fermi Potential for P Type [Φ_Fp]

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Fermi Potential for P Type Solution

STEP 0: Pre-Calculation Summary

Formula Used

Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)
Φ_Fp = ([BoltZ]*T_a)/[Charge-e]*ln(n_i/N_A)
This formula uses 2 Constants, 1 Functions, 4 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23

Functions Used

ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)

Variables Used

Fermi Potential for P Type - (Measured in Volt) - Fermi Potential for P Type is the energy level representing the highest energy electrons in the valence band at thermal equilibrium.
Absolute Temperature - (Measured in Kelvin) - Absolute Temperature is a measure of the thermal energy in a system and is measured in kelvins.
Intrinsic Carrier Concentration - (Measured in Electrons per Cubic Meter) - Intrinsic Carrier Concentration is a fundamental property of a semiconductor material and represents the concentration of thermally generated charge carriers in the absence of any external influences.
Doping Concentration of Acceptor - (Measured in Electrons per Cubic Meter) - Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.

STEP 1: Convert Input(s) to Base Unit

Absolute Temperature: 24.5 Kelvin --> 24.5 Kelvin No Conversion Required
Intrinsic Carrier Concentration: 3000000 Electrons per Cubic Meter --> 3000000 Electrons per Cubic Meter No Conversion Required
Doping Concentration of Acceptor: 1.32 Electrons per Cubic Centimeter --> 1320000 Electrons per Cubic Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Φ_Fp = ([BoltZ]*T_a)/[Charge-e]*ln(n_i/N_A) --> ([BoltZ]*24.5)/[Charge-e]*ln(3000000/1320000)

Evaluating ... ...

Φ_Fp = 0.00173329185218156

STEP 3: Convert Result to Output's Unit

0.00173329185218156 Volt --> No Conversion Required

FINAL ANSWER

0.00173329185218156 ≈ 0.001733 Volt <-- Fermi Potential for P Type

(Calculation completed in 00.004 seconds)

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Created by Banu Prakash

Dayananda Sagar College of Engineering (DSCE), Bangalore

Banu Prakash has created this Calculator and 50+ more calculators!

Verified by Dipanjona Mallick

Heritage Insitute of technology (HITK), Kolkata

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< MOS Transistor Calculators

Sidewall Voltage Equivalence Factor

LaTeX Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))

Fermi Potential for P Type

LaTeX Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)

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LaTeX Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor

Zero Bias Sidewall Junction Capacitance per Unit Length

LaTeX Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Fermi Potential for P Type Formula

LaTeX Go

Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)
Φ_Fp = ([BoltZ]*T_a)/[Charge-e]*ln(n_i/N_A)

What is the significance of the Fermi potential in p-type semiconductors?

The Fermi potential plays a crucial role in determining the population of charge carriers in a semiconductor. It influences the conductivity and electrical properties of p-type materials.

How to Calculate Fermi Potential for P Type?

Fermi Potential for P Type calculator uses Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor) to calculate the Fermi Potential for P Type, The Fermi Potential for P Type formula is defined as is the energy level representing the highest energy electrons in the valence band at thermal equilibrium. Fermi Potential for P Type is denoted by Φ_Fp symbol.

How to calculate Fermi Potential for P Type using this online calculator? To use this online calculator for Fermi Potential for P Type, enter Absolute Temperature (T_a), Intrinsic Carrier Concentration (n_i) & Doping Concentration of Acceptor (N_A) and hit the calculate button. Here is how the Fermi Potential for P Type calculation can be explained with given input values -> 0.000173 = ([BoltZ]*24.5)/[Charge-e]*ln(3000000/1320000).

FAQ

What is Fermi Potential for P Type?

The Fermi Potential for P Type formula is defined as is the energy level representing the highest energy electrons in the valence band at thermal equilibrium and is represented as Φ_Fp = ([BoltZ]*T_a)/[Charge-e]*ln(n_i/N_A) or Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor). Absolute Temperature is a measure of the thermal energy in a system and is measured in kelvins, Intrinsic Carrier Concentration is a fundamental property of a semiconductor material and represents the concentration of thermally generated charge carriers in the absence of any external influences & Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.

How to calculate Fermi Potential for P Type?

The Fermi Potential for P Type formula is defined as is the energy level representing the highest energy electrons in the valence band at thermal equilibrium is calculated using Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor). To calculate Fermi Potential for P Type, you need Absolute Temperature (T_a), Intrinsic Carrier Concentration (n_i) & Doping Concentration of Acceptor (N_A). With our tool, you need to enter the respective value for Absolute Temperature, Intrinsic Carrier Concentration & Doping Concentration of Acceptor and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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