Fermi Potential for N Type Calculator

✖Absolute Temperature is a measure of the thermal energy in a system and is measured in kelvins.ⓘ Absolute Temperature [T_a]			+10% -10%
✖Donor Dopant Concentration is the concentration of donor atoms per unit volume.ⓘ Donor Dopant Concentration [N_d]			+10% -10%
✖Intrinsic Carrier Concentration is a fundamental property of a semiconductor material and represents the concentration of thermally generated charge carriers in the absence of any external influences.ⓘ Intrinsic Carrier Concentration [n_i]			+10% -10%

✖Fermi Potential for N Type is a key parameter that describes the energy level at which the probability of finding an electron is 0.5.ⓘ Fermi Potential for N Type [Φ_Fn]

⎘ Copy

👎

Formula

LaTeX

Reset

👍

Download MOSFET Formula PDF PDF Image

Fermi Potential for N Type Solution

STEP 0: Pre-Calculation Summary

Formula Used

Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)
Φ_Fn = ([BoltZ]*T_a)/[Charge-e]*ln(N_d/n_i)
This formula uses 2 Constants, 1 Functions, 4 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23

Functions Used

ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)

Variables Used

Fermi Potential for N Type - (Measured in Volt) - Fermi Potential for N Type is a key parameter that describes the energy level at which the probability of finding an electron is 0.5.
Absolute Temperature - (Measured in Kelvin) - Absolute Temperature is a measure of the thermal energy in a system and is measured in kelvins.
Donor Dopant Concentration - (Measured in Electrons per Cubic Meter) - Donor Dopant Concentration is the concentration of donor atoms per unit volume.
Intrinsic Carrier Concentration - (Measured in Electrons per Cubic Meter) - Intrinsic Carrier Concentration is a fundamental property of a semiconductor material and represents the concentration of thermally generated charge carriers in the absence of any external influences.

STEP 1: Convert Input(s) to Base Unit

Absolute Temperature: 24.5 Kelvin --> 24.5 Kelvin No Conversion Required
Donor Dopant Concentration: 1.7E+23 Electrons per Cubic Meter --> 1.7E+23 Electrons per Cubic Meter No Conversion Required
Intrinsic Carrier Concentration: 3000000 Electrons per Cubic Meter --> 3000000 Electrons per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Φ_Fn = ([BoltZ]*T_a)/[Charge-e]*ln(N_d/n_i) --> ([BoltZ]*24.5)/[Charge-e]*ln(1.7E+23/3000000)

Evaluating ... ...

Φ_Fn = 0.081443344057026

STEP 3: Convert Result to Output's Unit

0.081443344057026 Volt --> No Conversion Required

FINAL ANSWER

0.081443344057026 ≈ 0.081443 Volt <-- Fermi Potential for N Type

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » MOSFET » Analog Electronics » MOS Transistor » Fermi Potential for N Type

Credits

Created by Banu Prakash

Dayananda Sagar College of Engineering (DSCE), Bangalore

Banu Prakash has created this Calculator and 50+ more calculators!

Verified by Dipanjona Mallick

Heritage Insitute of technology (HITK), Kolkata

Dipanjona Mallick has verified this Calculator and 50+ more calculators!

< MOS Transistor Calculators

Sidewall Voltage Equivalence Factor

LaTeX Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))

Fermi Potential for P Type

LaTeX Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)

Equivalent Large Signal Junction Capacitance

LaTeX Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor

Zero Bias Sidewall Junction Capacitance per Unit Length

LaTeX Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Fermi Potential for N Type Formula

LaTeX Go

Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)
Φ_Fn = ([BoltZ]*T_a)/[Charge-e]*ln(N_d/n_i)

How does the Fermi potential impact carrier concentration in N-type semiconductors?

The Fermi potential serves as a reference energy level that dictates the distribution of electrons in the conduction band. A higher Fermi potential corresponds to a higher electron concentration in the conduction band.

How to Calculate Fermi Potential for N Type?

Fermi Potential for N Type calculator uses Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration) to calculate the Fermi Potential for N Type, The Fermi Potential for N Type formula is defined as a key parameter that describes the energy level at which the probability of finding an electron is 0.5. Fermi Potential for N Type is denoted by Φ_Fn symbol.

How to calculate Fermi Potential for N Type using this online calculator? To use this online calculator for Fermi Potential for N Type, enter Absolute Temperature (T_a), Donor Dopant Concentration (N_d) & Intrinsic Carrier Concentration (n_i) and hit the calculate button. Here is how the Fermi Potential for N Type calculation can be explained with given input values -> 0.008144 = ([BoltZ]*24.5)/[Charge-e]*ln(1.7E+23/3000000).

FAQ

What is Fermi Potential for N Type?

The Fermi Potential for N Type formula is defined as a key parameter that describes the energy level at which the probability of finding an electron is 0.5 and is represented as Φ_Fn = ([BoltZ]*T_a)/[Charge-e]*ln(N_d/n_i) or Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration). Absolute Temperature is a measure of the thermal energy in a system and is measured in kelvins, Donor Dopant Concentration is the concentration of donor atoms per unit volume & Intrinsic Carrier Concentration is a fundamental property of a semiconductor material and represents the concentration of thermally generated charge carriers in the absence of any external influences.

How to calculate Fermi Potential for N Type?

The Fermi Potential for N Type formula is defined as a key parameter that describes the energy level at which the probability of finding an electron is 0.5 is calculated using Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration). To calculate Fermi Potential for N Type, you need Absolute Temperature (T_a), Donor Dopant Concentration (N_d) & Intrinsic Carrier Concentration (n_i). With our tool, you need to enter the respective value for Absolute Temperature, Donor Dopant Concentration & Intrinsic Carrier Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Spanish French German Russian Italian Portuguese Polish Dutch

Home

FREE PDFs

🔍 Search