Fabrication Process Parameter of NMOS Calculator

✖The doping concentration of P substrate is the number of impurities added to the substrate. It is the total concentration of acceptor ions.ⓘ Doping Concentration of P Substrate [N_P]			+10% -10%
✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%

✖The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface.ⓘ Fabrication Process Parameter of NMOS [γ]

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Fabrication Process Parameter of NMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance
γ = sqrt(2*[Charge-e]*N_P*[Permitivity-vacuum])/C_ox
This formula uses 2 Constants, 1 Functions, 3 Variables

Constants Used

[Permitivity-vacuum] - Permittivity of vacuum Value Taken As 8.85E-12
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Fabrication Process Parameter - The fabrication process parameter is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface.
Doping Concentration of P Substrate - (Measured in 1 per Cubic Meter) - The doping concentration of P substrate is the number of impurities added to the substrate. It is the total concentration of acceptor ions.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

STEP 1: Convert Input(s) to Base Unit

Doping Concentration of P Substrate: 6E+16 1 per Cubic Centimeter --> 6E+22 1 per Cubic Meter (Check conversion here)
Oxide Capacitance: 2.02 Microfarad --> 2.02E-06 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

γ = sqrt(2*[Charge-e]*N_P*[Permitivity-vacuum])/C_ox --> sqrt(2*[Charge-e]*6E+22*[Permitivity-vacuum])/2.02E-06

Evaluating ... ...

γ = 204.204864690003

STEP 3: Convert Result to Output's Unit

204.204864690003 --> No Conversion Required

FINAL ANSWER

204.204864690003 ≈ 204.2049 <-- Fabrication Process Parameter

(Calculation completed in 00.004 seconds)

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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< N Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

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Current Entering Drain Terminal of NMOS given Gate Source Voltage

NMOS as Linear Resistance

LaTeX Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Electron Drift Velocity of Channel in NMOS Transistor

LaTeX Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Fabrication Process Parameter of NMOS Formula

LaTeX Go

Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance
γ = sqrt(2*[Charge-e]*N_P*[Permitivity-vacuum])/C_ox

What is the other name of fabrication process parameter ?

The fabrication process parameter is also known as the body-effect parameter. It is denoted by γ. It is positive in NMOS.

How to Calculate Fabrication Process Parameter of NMOS?

Fabrication Process Parameter of NMOS calculator uses Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance to calculate the Fabrication Process Parameter, The Fabrication process parameter of NMOS is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface. Fabrication Process Parameter is denoted by γ symbol.

How to calculate Fabrication Process Parameter of NMOS using this online calculator? To use this online calculator for Fabrication Process Parameter of NMOS, enter Doping Concentration of P Substrate (N_P) & Oxide Capacitance (C_ox) and hit the calculate button. Here is how the Fabrication Process Parameter of NMOS calculation can be explained with given input values -> 204.2049 = sqrt(2*[Charge-e]*6E+22*[Permitivity-vacuum])/2.02E-06.

FAQ

What is Fabrication Process Parameter of NMOS?

The Fabrication process parameter of NMOS is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface and is represented as γ = sqrt(2*[Charge-e]*N_P*[Permitivity-vacuum])/C_ox or Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance. The doping concentration of P substrate is the number of impurities added to the substrate. It is the total concentration of acceptor ions & Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

How to calculate Fabrication Process Parameter of NMOS?

The Fabrication process parameter of NMOS is the process that starts with the oxidation of silicon substrate in which a relatively thick oxide layer is deposited on the surface is calculated using Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance. To calculate Fabrication Process Parameter of NMOS, you need Doping Concentration of P Substrate (N_P) & Oxide Capacitance (C_ox). With our tool, you need to enter the respective value for Doping Concentration of P Substrate & Oxide Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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