Depth of Depletion Region Associated with Drain Calculator

✖Built in Junction Potential refers to the potential difference or voltage that exists across a semiconductor junction when it is not connected to an external voltage source.ⓘ Built in Junction Potential [Φ_o]			+10% -10%
✖Drain Source Voltage is the voltage applied between drain and source terminal.ⓘ Drain Source Voltage [V_DS]			+10% -10%
✖Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.ⓘ Doping Concentration of Acceptor [N_A]			+10% -10%

✖Drain's Depth of Depletion Region is the depletion region that forms near the drain terminal when a voltage is applied to the gate terminal.ⓘ Depth of Depletion Region Associated with Drain [x_dD]

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Formula

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Depth of Depletion Region Associated with Drain

Formula

x dD = \sqrt{\frac{2 \cdot [Permitivity-silicon] \cdot (Φ o + V DS)}{[Charge-e] \cdot N A}}

Example

7.2E+7 m = \sqrt{\frac{2 \cdot [Permitivity-silicon] \cdot (2 V + 45 V)}{[Charge-e] \cdot 1.32 electrons/cm³}}

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Depth of Depletion Region Associated with Drain Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor))
x_dD = sqrt((2*[Permitivity-silicon]*(Φ_o+V_DS))/([Charge-e]*N_A))
This formula uses 2 Constants, 1 Functions, 4 Variables

Constants Used

[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Drain's Depth of Depletion Region - (Measured in Meter) - Drain's Depth of Depletion Region is the depletion region that forms near the drain terminal when a voltage is applied to the gate terminal.
Built in Junction Potential - (Measured in Volt) - Built in Junction Potential refers to the potential difference or voltage that exists across a semiconductor junction when it is not connected to an external voltage source.
Drain Source Voltage - (Measured in Volt) - Drain Source Voltage is the voltage applied between drain and source terminal.
Doping Concentration of Acceptor - (Measured in Electrons per Cubic Meter) - Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.

STEP 1: Convert Input(s) to Base Unit

Built in Junction Potential: 2 Volt --> 2 Volt No Conversion Required
Drain Source Voltage: 45 Volt --> 45 Volt No Conversion Required
Doping Concentration of Acceptor: 1.32 Electrons per Cubic Centimeter --> 1320000 Electrons per Cubic Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

x_dD = sqrt((2*[Permitivity-silicon]*(Φ_o+V_DS))/([Charge-e]*N_A)) --> sqrt((2*[Permitivity-silicon]*(2+45))/([Charge-e]*1320000))

Evaluating ... ...

x_dD = 72113188.282716

STEP 3: Convert Result to Output's Unit

72113188.282716 Meter --> No Conversion Required

FINAL ANSWER

72113188.282716 ≈ 7.2E+7 Meter <-- Drain's Depth of Depletion Region

(Calculation completed in 00.004 seconds)

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< MOS Transistor Calculators

Sidewall Voltage Equivalence Factor

Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))

Fermi Potential for P Type

Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)

Equivalent Large Signal Junction Capacitance

Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor

Zero Bias Sidewall Junction Capacitance per Unit Length

Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Depth of Depletion Region Associated with Drain Formula

What factors influence the size of the depletion region in the drain of a MOSFET?

The size of the depletion region in the drain of a MOSFET is influenced by the applied voltage (Vds) and the doping concentration in the drain region, with higher Vds leading to a larger depletion region and higher doping concentrations tending to narrow it.

How to Calculate Depth of Depletion Region Associated with Drain?

Depth of Depletion Region Associated with Drain calculator uses Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor)) to calculate the Drain's Depth of Depletion Region, The Depth of Depletion Region Associated with Drain formula is defined as the depletion region that forms near the drain terminal when a voltage is applied to the gate terminal. Drain's Depth of Depletion Region is denoted by x_dD symbol.

How to calculate Depth of Depletion Region Associated with Drain using this online calculator? To use this online calculator for Depth of Depletion Region Associated with Drain, enter Built in Junction Potential (Φ_o), Drain Source Voltage (V_DS) & Doping Concentration of Acceptor (N_A) and hit the calculate button. Here is how the Depth of Depletion Region Associated with Drain calculation can be explained with given input values -> 1.6E+7 = sqrt((2*[Permitivity-silicon]*(2+45))/([Charge-e]*1320000)).

FAQ

What is Depth of Depletion Region Associated with Drain?

The Depth of Depletion Region Associated with Drain formula is defined as the depletion region that forms near the drain terminal when a voltage is applied to the gate terminal and is represented as x_dD = sqrt((2*[Permitivity-silicon]*(Φ_o+V_DS))/([Charge-e]*N_A)) or Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor)). Built in Junction Potential refers to the potential difference or voltage that exists across a semiconductor junction when it is not connected to an external voltage source, Drain Source Voltage is the voltage applied between drain and source terminal & Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.

How to calculate Depth of Depletion Region Associated with Drain?

The Depth of Depletion Region Associated with Drain formula is defined as the depletion region that forms near the drain terminal when a voltage is applied to the gate terminal is calculated using Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor)). To calculate Depth of Depletion Region Associated with Drain, you need Built in Junction Potential (Φ_o), Drain Source Voltage (V_DS) & Doping Concentration of Acceptor (N_A). With our tool, you need to enter the respective value for Built in Junction Potential, Drain Source Voltage & Doping Concentration of Acceptor and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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