Effective Capacitance in CMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Ceff = D*(ioff*(10^(Vbc)))/(Ng*[BoltZ]*Vbc)
This formula uses 1 Constants, 5 Variables
Constants Used
[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23
Variables Used
Effective Capacitance in CMOS - (Measured in Farad) - Effective Capacitance in CMOS is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential.
Duty Cycle - A Duty cycle or power cycle is the fraction of one period in which a signal or system is active.
Off Current - (Measured in Ampere) - Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current.
Base Collector Voltage - (Measured in Volt) - Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.
Gates on Critical Path - Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.
STEP 1: Convert Input(s) to Base Unit
Duty Cycle: 1.3E-25 --> No Conversion Required
Off Current: 0.01 Milliampere --> 1E-05 Ampere (Check conversion ​here)
Base Collector Voltage: 2.02 Volt --> 2.02 Volt No Conversion Required
Gates on Critical Path: 0.95 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ceff = D*(ioff*(10^(Vbc)))/(Ng*[BoltZ]*Vbc) --> 1.3E-25*(1E-05*(10^(2.02)))/(0.95*[BoltZ]*2.02)
Evaluating ... ...
Ceff = 5.13789525162511E-06
STEP 3: Convert Result to Output's Unit
5.13789525162511E-06 Farad -->5.13789525162511 Microfarad (Check conversion ​here)
FINAL ANSWER
5.13789525162511 5.137895 Microfarad <-- Effective Capacitance in CMOS
(Calculation completed in 00.004 seconds)

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Effective Capacitance in CMOS Formula

​LaTeX ​Go
Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Ceff = D*(ioff*(10^(Vbc)))/(Ng*[BoltZ]*Vbc)

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How to Calculate Effective Capacitance in CMOS?

Effective Capacitance in CMOS calculator uses Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage) to calculate the Effective Capacitance in CMOS, The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential. Effective Capacitance in CMOS is denoted by Ceff symbol.

How to calculate Effective Capacitance in CMOS using this online calculator? To use this online calculator for Effective Capacitance in CMOS, enter Duty Cycle (D), Off Current (ioff), Base Collector Voltage (Vbc) & Gates on Critical Path (Ng) and hit the calculate button. Here is how the Effective Capacitance in CMOS calculation can be explained with given input values -> 5.1E+6 = 1.3E-25*(1E-05*(10^(2.02)))/(0.95*[BoltZ]*2.02).

FAQ

What is Effective Capacitance in CMOS?
The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential and is represented as Ceff = D*(ioff*(10^(Vbc)))/(Ng*[BoltZ]*Vbc) or Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage). A Duty cycle or power cycle is the fraction of one period in which a signal or system is active, Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current, Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state & Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.
How to calculate Effective Capacitance in CMOS?
The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential is calculated using Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage). To calculate Effective Capacitance in CMOS, you need Duty Cycle (D), Off Current (ioff), Base Collector Voltage (Vbc) & Gates on Critical Path (Ng). With our tool, you need to enter the respective value for Duty Cycle, Off Current, Base Collector Voltage & Gates on Critical Path and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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