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Drift Current Density due to Holes Calculator

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✖Hole Concentration refers to the number of electrons per unit volume in a material.ⓘ Hole Concentration [p]			+10% -10%
✖Hole Mobility represents the ability of these charge carriers to move in response to an electric field.ⓘ Hole Mobility [μ_p]			+10% -10%
✖Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.ⓘ Electric Field Intensity [E_i]			+10% -10%

✖Drift Current Density due to Holes refers to the movement of charge carriers (holes) in a semiconductor material under the influence of an electric field.ⓘ Drift Current Density due to Holes [J_p]

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Drift Current Density due to Holes Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity
J_p = [Charge-e]*p*μ_p*E_i
This formula uses 1 Constants, 4 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Drift Current Density due to Holes - (Measured in Ampere per Square Meter) - Drift Current Density due to Holes refers to the movement of charge carriers (holes) in a semiconductor material under the influence of an electric field.
Hole Concentration - (Measured in Electrons per Cubic Meter) - Hole Concentration refers to the number of electrons per unit volume in a material.
Hole Mobility - (Measured in Square Meter per Volt per Second) - Hole Mobility represents the ability of these charge carriers to move in response to an electric field.
Electric Field Intensity - (Measured in Volt per Meter) - Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.

STEP 1: Convert Input(s) to Base Unit

Hole Concentration: 1E+20 Electrons per Cubic Meter --> 1E+20 Electrons per Cubic Meter No Conversion Required
Hole Mobility: 400 Square Meter per Volt per Second --> 400 Square Meter per Volt per Second No Conversion Required
Electric Field Intensity: 11.2 Volt per Meter --> 11.2 Volt per Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

J_p = [Charge-e]*p*μ_p*E_i --> [Charge-e]*1E+20*400*11.2

Evaluating ... ...

J_p = 71777.512576

STEP 3: Convert Result to Output's Unit

71777.512576 Ampere per Square Meter -->0.071777512576 Ampere per Square Millimeter (Check conversion here)

FINAL ANSWER

0.071777512576 ≈ 0.071778 Ampere per Square Millimeter <-- Drift Current Density due to Holes

(Calculation completed in 00.004 seconds)

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Drift Current Density due to Holes Formula

LaTeX Go

Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity
J_p = [Charge-e]*p*μ_p*E_i

Why is drift current important in semiconductor devices?

Drift current contributes to the overall current in semiconductor devices, affecting their electrical behavior. Understanding drift current is crucial for designing and analyzing electronic devices like transistors.

How to Calculate Drift Current Density due to Holes?

Drift Current Density due to Holes calculator uses Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity to calculate the Drift Current Density due to Holes, The Drift Current Density due to Holes formula is defined as the contribution of holes to the overall drift current density in a semiconductor. Drift Current Density due to Holes is denoted by J_p symbol.

How to calculate Drift Current Density due to Holes using this online calculator? To use this online calculator for Drift Current Density due to Holes, enter Hole Concentration (p), Hole Mobility (μ_p) & Electric Field Intensity (E_i) and hit the calculate button. Here is how the Drift Current Density due to Holes calculation can be explained with given input values -> 7.2E-8 = [Charge-e]*1E+20*400*11.2.

FAQ

What is Drift Current Density due to Holes?

The Drift Current Density due to Holes formula is defined as the contribution of holes to the overall drift current density in a semiconductor and is represented as J_p = [Charge-e]*p*μ_p*E_i or Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity. Hole Concentration refers to the number of electrons per unit volume in a material, Hole Mobility represents the ability of these charge carriers to move in response to an electric field & Electric Field Intensity is a vector quantity that represents the force experienced by a positive test charge at a given point in space due to the presence of other charges.

How to calculate Drift Current Density due to Holes?

The Drift Current Density due to Holes formula is defined as the contribution of holes to the overall drift current density in a semiconductor is calculated using Drift Current Density due to Holes = [Charge-e]*Hole Concentration*Hole Mobility*Electric Field Intensity. To calculate Drift Current Density due to Holes, you need Hole Concentration (p), Hole Mobility (μ_p) & Electric Field Intensity (E_i). With our tool, you need to enter the respective value for Hole Concentration, Hole Mobility & Electric Field Intensity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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