Drain Saturation Current of MOSFET Calculator

✖Process transconductance in PMOS refers to the gain of a PMOS transistor with respect to its gate-source voltage.ⓘ Process Transconductance in PMOS [k'_p]			+10% -10%
✖Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).ⓘ Channel Width [W_c]			+10% -10%
✖Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).ⓘ Channel Length [L]			+10% -10%
✖The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.ⓘ Effective Voltage [V_eff]			+10% -10%

✖Saturation drain current is an important parameter in the design & analysis of MOSFET, as it determines the max current that can be handled by the MOSFET without exceed its safe operating limits.ⓘ Drain Saturation Current of MOSFET [I_d(sat)]

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Drain Saturation Current of MOSFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Saturation Drain Current = 1/2*Process Transconductance in PMOS*Channel Width/Channel Length*(Effective Voltage)^2
I_d(sat) = 1/2*k'_p*W_c/L*(V_eff)^2
This formula uses 5 Variables

Variables Used

Saturation Drain Current - (Measured in Ampere) - Saturation drain current is an important parameter in the design & analysis of MOSFET, as it determines the max current that can be handled by the MOSFET without exceed its safe operating limits.
Process Transconductance in PMOS - (Measured in Siemens) - Process transconductance in PMOS refers to the gain of a PMOS transistor with respect to its gate-source voltage.
Channel Width - (Measured in Meter) - Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Channel Length - (Measured in Meter) - Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET).
Effective Voltage - (Measured in Volt) - The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance in PMOS: 0.58 Millisiemens --> 0.00058 Siemens (Check conversion here)
Channel Width: 10 Micrometer --> 1E-05 Meter (Check conversion here)
Channel Length: 100 Micrometer --> 0.0001 Meter (Check conversion here)
Effective Voltage: 1.7 Volt --> 1.7 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d(sat) = 1/2*k'_p*W_c/L*(V_eff)^2 --> 1/2*0.00058*1E-05/0.0001*(1.7)^2

Evaluating ... ...

I_d(sat) = 8.381E-05

STEP 3: Convert Result to Output's Unit

8.381E-05 Ampere -->0.08381 Milliampere (Check conversion here)

FINAL ANSWER

0.08381 Milliampere <-- Saturation Drain Current

(Calculation completed in 00.004 seconds)

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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< Current Calculators

Second Drain Current of MOSFET on Large-Signal Operation

LaTeX Go Drain Current 2 = DC Bias Current/2-DC Bias Current/Overdrive Voltage*Differential Input Signal/2*sqrt(1-(Differential Input Signal)^2/(4*Overdrive Voltage^2))

First Drain Current of MOSFET on Large-Signal Operation

LaTeX Go Drain Current 1 = DC Bias Current/2+DC Bias Current/Overdrive Voltage*Differential Input Signal/2*sqrt(1-Differential Input Signal^2/(4*Overdrive Voltage^2))

First Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage

LaTeX Go Drain Current 1 = DC Bias Current/2+DC Bias Current/Overdrive Voltage*Differential Input Signal/2

Drain Current of MOSFET on Large-Signal Operation given Overdrive Voltage

LaTeX Go Drain Current = (DC Bias Current/Overdrive Voltage)*(Differential Input Signal/2)

Drain Saturation Current of MOSFET Formula

LaTeX Go

Saturation Drain Current = 1/2*Process Transconductance in PMOS*Channel Width/Channel Length*(Effective Voltage)^2
I_d(sat) = 1/2*k'_p*W_c/L*(V_eff)^2

What is drain saturation current?

A depletion layer located at the drain end of the gate accommodates the additional drain-to-source voltage. This behavior is referred to as drain current saturation. The quadratic model explains the typical current-voltage characteristics of a MOSFET, which are normally plotted for different gate-to-source voltages.

How much current can a MOSFET handle?

High amperage MOSFETs like the 511-STP200N3LL say they can handle 120 Amps of current. The Metal Oxide Semiconductor Field Effect Transistor, or MOSFET for short, has an extremely high input gate resistance with the current flowing through the channel between the source and drain is controlled by the gate voltage.

How to Calculate Drain Saturation Current of MOSFET?

Drain Saturation Current of MOSFET calculator uses Saturation Drain Current = 1/2*Process Transconductance in PMOS*Channel Width/Channel Length*(Effective Voltage)^2 to calculate the Saturation Drain Current, The Drain saturation current of MOSFET here "saturation" in MOSFETs means that change in V_DS will not produce a significant change in the I_d (drain current). You can think about MOSFET in saturation as a current source. Saturation Drain Current is denoted by I_d(sat) symbol.

How to calculate Drain Saturation Current of MOSFET using this online calculator? To use this online calculator for Drain Saturation Current of MOSFET, enter Process Transconductance in PMOS (k'_p), Channel Width (W_c), Channel Length (L) & Effective Voltage (V_eff) and hit the calculate button. Here is how the Drain Saturation Current of MOSFET calculation can be explained with given input values -> 83.81 = 1/2*0.00058*1E-05/0.0001*(1.7)^2.

FAQ

What is Drain Saturation Current of MOSFET?

The Drain saturation current of MOSFET here "saturation" in MOSFETs means that change in V_DS will not produce a significant change in the I_d (drain current). You can think about MOSFET in saturation as a current source and is represented as I_d(sat) = 1/2*k'_p*W_c/L*(V_eff)^2 or Saturation Drain Current = 1/2*Process Transconductance in PMOS*Channel Width/Channel Length*(Effective Voltage)^2. Process transconductance in PMOS refers to the gain of a PMOS transistor with respect to its gate-source voltage, Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz), Channel length refers to the distance between the source and drain terminals in a field-effect transistor (FET) & The effective voltage in a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is the voltage that determines the behavior of the device. It is also known as the gate-source voltage.

How to calculate Drain Saturation Current of MOSFET?

The Drain saturation current of MOSFET here "saturation" in MOSFETs means that change in V_DS will not produce a significant change in the I_d (drain current). You can think about MOSFET in saturation as a current source is calculated using Saturation Drain Current = 1/2*Process Transconductance in PMOS*Channel Width/Channel Length*(Effective Voltage)^2. To calculate Drain Saturation Current of MOSFET, you need Process Transconductance in PMOS (k'_p), Channel Width (W_c), Channel Length (L) & Effective Voltage (V_eff). With our tool, you need to enter the respective value for Process Transconductance in PMOS, Channel Width, Channel Length & Effective Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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